Hryhorii Stanchu
Hryhorii Stanchu
PhD
Подтвержден адрес электронной почты в домене uark.edu
Название
Процитировано
Процитировано
Год
X-ray diffraction investigation of GaN layers on Si (111) and Al₂O₃ (0001) substrates
NV Safriuk, GV Stanchu, AV Kuchuk, VP Kladko, AE Belyaev, ...
Semiconductor physics quantum electronics & optoelectronics, 2013
232013
Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate
AV Kuchuk, PM Lytvyn, C Li, HV Stanchu, YI Mazur, ME Ware, ...
ACS applied materials & interfaces 7 (41), 23320-23327, 2015
172015
High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si (111) substrate
H Stanchu, V Kladko, AV Kuchuk, N Safriuk, A Belyaev, A Wierzbicka, ...
Nanoscale research letters 10 (1), 1-5, 2015
152015
Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction
AV Kuchuk, HV Stanchu, C Li, ME Ware, YI Mazur, VP Kladko, ...
Journal of Applied Physics 116 (22), 224302, 2014
122014
Modelling of X-ray diffraction curves for GaN nanowires on Si (1 1 1)
VP Kladko, АV Kuchuk, HV Stanchu, NV Safriuk, AE Belyaev, ...
Journal of crystal growth 401, 347-350, 2014
112014
Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices
HV Stanchu, AV Kuchuk, M Barchuk, YI Mazur, VP Kladko, ZM Wang, ...
CrystEngComm 19 (22), 2977-2982, 2017
102017
The peculiarities of strain relaxation in GaN/AlN superlattices grown on vicinal GaN (0001) substrate: comparative XRD and AFM study
AV Kuchuk, S Kryvyi, PM Lytvyn, S Li, VP Kladko, ME Ware, YI Mazur, ...
Nanoscale research letters 11 (1), 1-8, 2016
82016
High-resolution x-ray diffraction analysis of strain distribution in GaN nanowires on Si (111) substrate Nano
H Stanchu, V Kladko, AV Kuchuk, N Safriuk, A Belyaev, A Wierzbicka, ...
Res. Lett 10, 1-5, 2015
82015
Effect of strain-polarization fields on optical transitions in AlGaN/GaN multi-quantum well structures
V Kladko, A Kuchuk, А Naumov, N Safriuk, O Kolomys, S Kryvyi, ...
Physica E: Low-dimensional Systems and Nanostructures 76, 140-145, 2016
62016
Local strain and crystalline defects in GaN/AlGaN/GaN (0001) heterostructures induced by compositionally graded AlGaN buried layers
HV Stanchu, AV Kuchuk, YI Mazur, C Li, PM Lytvyn, M Schmidbauer, ...
Crystal Growth & Design 19 (1), 200-210, 2018
52018
Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si (001) substrate
HV Stanchu, AV Kuchuk, YI Mazur, J Margetis, J Tolle, SQ Yu, GJ Salamo
Applied Physics Letters 116 (23), 232101, 2020
42020
Strain relaxation in GaN/AlN superlattices on GaN (0001) substrate: Combined superlattice-to-substrate lattice misfit and thickness-dependent effects
HV Stanchu, AV Kuchuk, PM Lytvyn, YI Mazur, Y Maidaniuk, M Benamara, ...
Materials & Design 157, 141-150, 2018
32018
Effect of well/barrier thickness ratio on strain relaxation in GaN/AlN superlattices grown on GaN/sapphire template
SB Kryvyi, PM Lytvyn, VP Kladko, HV Stanchu, AV Kuchuk, YI Mazur, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017
32017
Investigation of Plasmon Gold Film Nanostructures by Means of both X-Ray Reflectometry and Diffractometry
OY Gudymenko, SB Kryvyi, HV Stanchu, VP Kladko, NV Safryuk, ...
Metallofiz. Noveishie Tekhnol 37, 1215-1223, 2015
32015
Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
VP Kladko, NV Safriuk, HV Stanchu, AV Kuchuk, VP Melnyk, ...
Semiconductor physics quantum electronics & optoelectronics, 2014
32014
GaAs epitaxial growth on R-plane sapphire substrate
SK Saha, R Kumar, A Kuchuk, H Stanchu, YI Mazur, SQ Yu, GJ Salamo
Journal of Crystal Growth 548, 125848, 2020
22020
X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si (100) heterostructures
H Stanchu, AV Kuchuk, YI Mazur, J Margetis, J Tolle, J Richter, SQ Yu, ...
Semiconductor Science and Technology 35 (7), 075009, 2020
22020
Kinetically controlled transition from 2D nanostructured films to 3D multifaceted InN nanocrystals on GaN (0001)
HV Stanchu, AV Kuchuk, PM Lytvyn, YI Mazur, ME Ware, Y Maidaniuk, ...
CrystEngComm 20 (11), 1499-1508, 2018
22018
Structural properties of chalcogenide glasses As2Se3 doped with manganese
OP Paiuk, LA Revutska, AV Stronski, AY Gudymenko, HV Stanchu, ...
Semiconductor physics quantum electronics & optoelectronics, 205-207, 2016
22016
Compositionally Graded AlGaN Nanostructures: Strain Distribution and X-ray Diffraction Reciprocal Space Mapping
H Stanchu, M Auf der Maur, AV Kuchuk, YI Mazur, M Sobanska, ...
Crystal Growth & Design 20 (3), 1543-1551, 2020
12020
В данный момент система не может выполнить эту операцию. Повторите попытку позднее.
Статьи 1–20