X-ray diffraction investigation of GaN layers on Si (111) and Al₂O₃ (0001) substrates NV Safriuk, GV Stanchu, AV Kuchuk, VP Kladko, AE Belyaev, ... Semiconductor physics quantum electronics & optoelectronics, 2013 | 23 | 2013 |
Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate AV Kuchuk, PM Lytvyn, C Li, HV Stanchu, YI Mazur, ME Ware, ... ACS applied materials & interfaces 7 (41), 23320-23327, 2015 | 17 | 2015 |
High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si (111) substrate H Stanchu, V Kladko, AV Kuchuk, N Safriuk, A Belyaev, A Wierzbicka, ... Nanoscale research letters 10 (1), 1-5, 2015 | 15 | 2015 |
Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction AV Kuchuk, HV Stanchu, C Li, ME Ware, YI Mazur, VP Kladko, ... Journal of Applied Physics 116 (22), 224302, 2014 | 12 | 2014 |
Modelling of X-ray diffraction curves for GaN nanowires on Si (1 1 1) VP Kladko, АV Kuchuk, HV Stanchu, NV Safriuk, AE Belyaev, ... Journal of crystal growth 401, 347-350, 2014 | 11 | 2014 |
Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices HV Stanchu, AV Kuchuk, M Barchuk, YI Mazur, VP Kladko, ZM Wang, ... CrystEngComm 19 (22), 2977-2982, 2017 | 10 | 2017 |
The peculiarities of strain relaxation in GaN/AlN superlattices grown on vicinal GaN (0001) substrate: comparative XRD and AFM study AV Kuchuk, S Kryvyi, PM Lytvyn, S Li, VP Kladko, ME Ware, YI Mazur, ... Nanoscale research letters 11 (1), 1-8, 2016 | 8 | 2016 |
High-resolution x-ray diffraction analysis of strain distribution in GaN nanowires on Si (111) substrate Nano H Stanchu, V Kladko, AV Kuchuk, N Safriuk, A Belyaev, A Wierzbicka, ... Res. Lett 10, 1-5, 2015 | 8 | 2015 |
Effect of strain-polarization fields on optical transitions in AlGaN/GaN multi-quantum well structures V Kladko, A Kuchuk, А Naumov, N Safriuk, O Kolomys, S Kryvyi, ... Physica E: Low-dimensional Systems and Nanostructures 76, 140-145, 2016 | 6 | 2016 |
Local strain and crystalline defects in GaN/AlGaN/GaN (0001) heterostructures induced by compositionally graded AlGaN buried layers HV Stanchu, AV Kuchuk, YI Mazur, C Li, PM Lytvyn, M Schmidbauer, ... Crystal Growth & Design 19 (1), 200-210, 2018 | 5 | 2018 |
Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si (001) substrate HV Stanchu, AV Kuchuk, YI Mazur, J Margetis, J Tolle, SQ Yu, GJ Salamo Applied Physics Letters 116 (23), 232101, 2020 | 4 | 2020 |
Strain relaxation in GaN/AlN superlattices on GaN (0001) substrate: Combined superlattice-to-substrate lattice misfit and thickness-dependent effects HV Stanchu, AV Kuchuk, PM Lytvyn, YI Mazur, Y Maidaniuk, M Benamara, ... Materials & Design 157, 141-150, 2018 | 3 | 2018 |
Effect of well/barrier thickness ratio on strain relaxation in GaN/AlN superlattices grown on GaN/sapphire template SB Kryvyi, PM Lytvyn, VP Kladko, HV Stanchu, AV Kuchuk, YI Mazur, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017 | 3 | 2017 |
Investigation of Plasmon Gold Film Nanostructures by Means of both X-Ray Reflectometry and Diffractometry OY Gudymenko, SB Kryvyi, HV Stanchu, VP Kladko, NV Safryuk, ... Metallofiz. Noveishie Tekhnol 37, 1215-1223, 2015 | 3 | 2015 |
Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios VP Kladko, NV Safriuk, HV Stanchu, AV Kuchuk, VP Melnyk, ... Semiconductor physics quantum electronics & optoelectronics, 2014 | 3 | 2014 |
GaAs epitaxial growth on R-plane sapphire substrate SK Saha, R Kumar, A Kuchuk, H Stanchu, YI Mazur, SQ Yu, GJ Salamo Journal of Crystal Growth 548, 125848, 2020 | 2 | 2020 |
X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si (100) heterostructures H Stanchu, AV Kuchuk, YI Mazur, J Margetis, J Tolle, J Richter, SQ Yu, ... Semiconductor Science and Technology 35 (7), 075009, 2020 | 2 | 2020 |
Kinetically controlled transition from 2D nanostructured films to 3D multifaceted InN nanocrystals on GaN (0001) HV Stanchu, AV Kuchuk, PM Lytvyn, YI Mazur, ME Ware, Y Maidaniuk, ... CrystEngComm 20 (11), 1499-1508, 2018 | 2 | 2018 |
Structural properties of chalcogenide glasses As2Se3 doped with manganese OP Paiuk, LA Revutska, AV Stronski, AY Gudymenko, HV Stanchu, ... Semiconductor physics quantum electronics & optoelectronics, 205-207, 2016 | 2 | 2016 |
Compositionally Graded AlGaN Nanostructures: Strain Distribution and X-ray Diffraction Reciprocal Space Mapping H Stanchu, M Auf der Maur, AV Kuchuk, YI Mazur, M Sobanska, ... Crystal Growth & Design 20 (3), 1543-1551, 2020 | 1 | 2020 |