| X-ray diffraction investigation of GaN layers on Si (111) and Al₂O₃ (0001) substrates NV Safriuk, GV Stanchu, AV Kuchuk, VP Kladko, AE Belyaev, ... Semiconductor physics quantum electronics & optoelectronics, 2013 | 28 | 2013 |
| Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si (001) substrate HV Stanchu, AV Kuchuk, YI Mazur, J Margetis, J Tolle, SQ Yu, GJ Salamo Applied Physics Letters 116 (23), 2020 | 25 | 2020 |
| Asymmetrical reciprocal space mapping using X-ray diffraction: a technique for structural characterization of GaN/AlN superlattices HV Stanchu, AV Kuchuk, M Barchuk, YI Mazur, VP Kladko, ZM Wang, ... CrystEngComm 19 (22), 2977-2982, 2017 | 24 | 2017 |
| Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate AV Kuchuk, PM Lytvyn, C Li, HV Stanchu, YI Mazur, ME Ware, ... ACS applied materials & interfaces 7 (41), 23320-23327, 2015 | 22 | 2015 |
| High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si (111) substrate H Stanchu, V Kladko, AV Kuchuk, N Safriuk, A Belyaev, A Wierzbicka, ... Nanoscale research letters 10, 1-5, 2015 | 20 | 2015 |
| Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction AV Kuchuk, HV Stanchu, C Li, ME Ware, YI Mazur, VP Kladko, ... Journal of Applied Physics 116 (22), 2014 | 20 | 2014 |
| Quantitative correlation study of dislocation generation, strain relief, and Sn outdiffusion in thermally annealed GeSn epilayers HV Stanchu, AV Kuchuk, YI Mazur, K Pandey, FM de Oliveira, ... Crystal Growth & Design 21 (3), 1666-1673, 2021 | 18 | 2021 |
| Modelling of X-ray diffraction curves for GaN nanowires on Si (1 1 1) VP Kladko, АV Kuchuk, HV Stanchu, NV Safriuk, AE Belyaev, ... Journal of crystal growth 401, 347-350, 2014 | 15 | 2014 |
| Local strain and crystalline defects in GaN/AlGaN/GaN (0001) heterostructures induced by compositionally graded AlGaN buried layers HV Stanchu, AV Kuchuk, YI Mazur, C Li, PM Lytvyn, M Schmidbauer, ... Crystal Growth & Design 19 (1), 200-210, 2018 | 14 | 2018 |
| The peculiarities of strain relaxation in GaN/AlN superlattices grown on vicinal GaN (0001) substrate: comparative XRD and AFM study AV Kuchuk, S Kryvyi, PM Lytvyn, S Li, VP Kladko, ME Ware, YI Mazur, ... Nanoscale Research Letters 11, 1-8, 2016 | 13 | 2016 |
| X-ray diffraction study of strain relaxation, spontaneous compositional gradient, and dislocation density in GeSn/Ge/Si (100) heterostructures H Stanchu, AV Kuchuk, YI Mazur, J Margetis, J Tolle, J Richter, SQ Yu, ... Semiconductor Science and Technology 35 (7), 075009, 2020 | 12 | 2020 |
| Impact of defects on photoexcited carrier relaxation dynamics in GeSn thin films SV Kondratenko, SS Derenko, YI Mazur, H Stanchu, AV Kuchuk, ... Journal of Physics: Condensed Matter 33 (6), 065702, 2020 | 11 | 2020 |
| GaAs epitaxial growth on R-plane sapphire substrate SK Saha, R Kumar, A Kuchuk, H Stanchu, YI Mazur, SQ Yu, GJ Salamo Journal of Crystal Growth 548, 125848, 2020 | 11 | 2020 |
| Effect of strain-polarization fields on optical transitions in AlGaN/GaN multi-quantum well structures V Kladko, A Kuchuk, А Naumov, N Safriuk, O Kolomys, S Kryvyi, ... Physica E: Low-dimensional Systems and Nanostructures 76, 140-145, 2016 | 11 | 2016 |
| High-resolution x-ray diffraction analysis of strain distribution in GaN nanowires on Si (111) substrate Nano H Stanchu, V Kladko, AV Kuchuk, N Safriuk, A Belyaev, A Wierzbicka, ... Res. Lett 10, 1-5, 2015 | 11 | 2015 |
| Impact of Long-Term Annealing on Photoluminescence from Ge1−xSnx Alloys O Olorunsola, H Stanchu, S Ojo, K Pandey, A Said, J Margetis, J Tolle, ... Crystals 11 (8), 905, 2021 | 9 | 2021 |
| Strain relaxation in GaN/AlN superlattices on GaN (0001) substrate: Combined superlattice-to-substrate lattice misfit and thickness-dependent effects HV Stanchu, AV Kuchuk, PM Lytvyn, YI Mazur, Y Maidaniuk, M Benamara, ... Materials & Design 157, 141-150, 2018 | 9 | 2018 |
| Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift AV Kuchuk, FM de Oliveira, PK Ghosh, YI Mazur, HV Stanchu, ... Nano Research, 1-8, 2022 | 8 | 2022 |
| SiGeSn quantum well for photonics integrated circuits on Si photonics platform: a review O Olorunsola, A Said, S Ojo, H Stanchu, G Abernathy, S Amoah, S Saha, ... Journal of Physics D: Applied Physics 55 (44), 443001, 2022 | 7 | 2022 |
| Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics O Olorunsola, H Stanchu, S Ojo, E Wangila, A Said, M Zamani-Alavijeh, ... Journal of Crystal Growth 588, 126675, 2022 | 7 | 2022 |
