| Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices RM Peleshchak, SK Guba, OV Kuzyk, IV Kurilo, OO Dankiv Semiconductors 47 (3), 349-353, 2013 | 22 | 2013 |
| The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation RM Peleshchak, OV Kuzyk, OO Dan'kiv, SK Guba arXiv preprint arXiv:1903.11601, 2019 | 11 | 2019 |
| Misfit dislocations and stress in In1 − x Ga x As/GaAs heterostructures IV Kurilo, SK Guba Inorganic Materials 47, 819-823, 2011 | 8 | 2011 |
| Calculation of the surface characteristics and pressures of InAs quantum dots in a GaAs matrix SK Guba, VN Yuzevich Semiconductors 48, 905-910, 2014 | 6 | 2014 |
| Gas-phase formation at the low-temperature isothermal growing of Bi-doped GaAs layers SK Guba, IV Kurilo Functional materials 8, 234-239, 2001 | 5 | 2001 |
| Some features of defect formation in transition regions of multilayer GaAs homoepitaxial structures SK Guba, IV Kurilo Functional materials 7 (42), 815-818, 2000 | 5 | 2000 |
| Estimative calculations of the dispersion limit for AIIBVI and AIIIBV crystals IV Kurilo, IA Rudyi, SK Guba Inorganic Materials 45, 1329-1332, 2009 | 2 | 2009 |
| The influence of adsorbed atoms concentration on the temperature coefficient of resonant frequency of the quasi-Rayleigh wave MY Seneta, RM Peleshchak, AI Nesterivskyi, NI Lazurchak, SK Guba arXiv preprint arXiv:2103.15499, 2021 | 1 | 2021 |
| Production of GaAs transistors with the Schottky barrier in Bi-GaAs-AsCl3-HCl-SnCl2-H2-He system by epitaxial deposition. VO Voronin, SK Guba, IV Kurylo Semiconductor Physics, Quantum Electronics & Optoelectronics 9 (4), 2006 | 1 | 2006 |
| Precipitation mechanism of GaAs1-xPx/GaAs in the isothermal CVD method VA Voronin, SK Guba, MA Litvin Fourth International Conference on Material Science and Material Properties …, 1999 | 1 | 1999 |
| Nanostructured ternary compound Hg(Cd)Te-based composite formed by ion bombardment Ag+ for hybrid photonics OB Smirnov, RK Savkina, RS Udovytska, SK Guba, SO Yuryev, YV Malyi Journal of Materials Science: Materials in Electronics 33 (35), 26178-26189, 2022 | | 2022 |
| Influence of the surface acoustic wave on the electron states of adsorbed semiconductor surface MY Seneta, RM Peleshchak, SK Guba 2017 IEEE 7th International Conference Nanomaterials: Application …, 2017 | | 2017 |
| Formation InAs Quantum Dots in a Matrix GaAs in Kinetic Mode for CVD-method SK Guba Journal of Nano-and Electronic Physics 9 (3), 2017 | | 2017 |
| The Temperature Changes of the Energy Characteristics of the Surface Layer of InAs Quantum Dots in GaAs Matrix SK Guba, VN Yuzevich Journal of Nano-and Electronic Physics 7 (4), 4065-1, 2015 | | 2015 |
| Transition from a disordered to a crystalline state in II–VI and III–V films IV Kurilo, SK Guba, IO Rudyi, IS Virt Inorganic Materials 48, 16-20, 2012 | | 2012 |
| Kinetics of formation of adsorption layer on the edge of (100) GaAs while nucleation of InAs quantum dots in the process of chloride epitaxy; Kyinetika formuvannya … SK Guba, YV Kurilo, RJ Petrovich | | 2010 |
| Kinetics of nanowhiskers InAs growth in the chloride system; Kyinetika rostu nanovyiskeryiv InAs v khloryidnyij sistemyi SK Guba, YY Kost | | 2009 |
| Dislocations of inadequacy and strength in the In {sub 1-x} Ga {sub x} As/GaAs heterostructures; Dislokatsyiyi nevyidpovyidnostyi yi napruzhennya v geterostrukturakh In {sub 1 … SK Guba, YV Kurilo | | 2009 |
| Single-component model of epitaxial growth of GaAs from gas phase at unstable state VO Voronin, SK Guba, MO Litvin Modern Problems of Radio Engineering, Telecommunications and Computer …, 2002 | | 2002 |
| Electrical and photoelectric properties of GaAs pin structures produced by liquid phase epitaxy SK Guba, SI Krukovskii, VI Lukjanenko, RK Savkina, AB Smirnov, ... | | 2001 |
