Сергій Губа
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Effect of Bi isovalent dopants on the formation of homogeneous coherently strained InAs quantum dots in GaAs matrices
RM Peleshchak, SK Guba, OV Kuzyk, IV Kurilo, OO Dankiv
Semiconductors 47 (3), 349-353, 2013
The effect of the electric field on the nucleation of the nanometer periodic structure of adatoms in GaAs semiconductor under the action of laser irradiation
RM Peleshchak, OV Kuzyk, OO Dan'kiv, SK Guba
arXiv preprint arXiv:1903.11601, 2019
Misfit dislocations and stress in In1 − x Ga x As/GaAs heterostructures
IV Kurilo, SK Guba
Inorganic Materials 47, 819-823, 2011
Calculation of the surface characteristics and pressures of InAs quantum dots in a GaAs matrix
SK Guba, VN Yuzevich
Semiconductors 48, 905-910, 2014
Gas-phase formation at the low-temperature isothermal growing of Bi-doped GaAs layers
SK Guba, IV Kurilo
Functional materials 8, 234-239, 2001
Some features of defect formation in transition regions of multilayer GaAs homoepitaxial structures
SK Guba, IV Kurilo
Functional materials 7 (42), 815-818, 2000
Estimative calculations of the dispersion limit for AIIBVI and AIIIBV crystals
IV Kurilo, IA Rudyi, SK Guba
Inorganic Materials 45, 1329-1332, 2009
The influence of adsorbed atoms concentration on the temperature coefficient of resonant frequency of the quasi-Rayleigh wave
MY Seneta, RM Peleshchak, AI Nesterivskyi, NI Lazurchak, SK Guba
arXiv preprint arXiv:2103.15499, 2021
Production of GaAs transistors with the Schottky barrier in Bi-GaAs-AsCl3-HCl-SnCl2-H2-He system by epitaxial deposition.
VO Voronin, SK Guba, IV Kurylo
Semiconductor Physics, Quantum Electronics & Optoelectronics 9 (4), 2006
Precipitation mechanism of GaAs1-xPx/GaAs in the isothermal CVD method
VA Voronin, SK Guba, MA Litvin
Fourth International Conference on Material Science and Material Properties …, 1999
Nanostructured ternary compound Hg(Cd)Te-based composite formed by ion bombardment Ag+ for hybrid photonics
OB Smirnov, RK Savkina, RS Udovytska, SK Guba, SO Yuryev, YV Malyi
Journal of Materials Science: Materials in Electronics 33 (35), 26178-26189, 2022
Influence of the surface acoustic wave on the electron states of adsorbed semiconductor surface
MY Seneta, RM Peleshchak, SK Guba
2017 IEEE 7th International Conference Nanomaterials: Application …, 2017
Formation InAs Quantum Dots in a Matrix GaAs in Kinetic Mode for CVD-method
SK Guba
Journal of Nano-and Electronic Physics 9 (3), 2017
The Temperature Changes of the Energy Characteristics of the Surface Layer of InAs Quantum Dots in GaAs Matrix
SK Guba, VN Yuzevich
Journal of Nano-and Electronic Physics 7 (4), 4065-1, 2015
Transition from a disordered to a crystalline state in II–VI and III–V films
IV Kurilo, SK Guba, IO Rudyi, IS Virt
Inorganic Materials 48, 16-20, 2012
Kinetics of formation of adsorption layer on the edge of (100) GaAs while nucleation of InAs quantum dots in the process of chloride epitaxy; Kyinetika formuvannya …
SK Guba, YV Kurilo, RJ Petrovich
Kinetics of nanowhiskers InAs growth in the chloride system; Kyinetika rostu nanovyiskeryiv InAs v khloryidnyij sistemyi
SK Guba, YY Kost
Dislocations of inadequacy and strength in the In {sub 1-x} Ga {sub x} As/GaAs heterostructures; Dislokatsyiyi nevyidpovyidnostyi yi napruzhennya v geterostrukturakh In {sub 1 …
SK Guba, YV Kurilo
Single-component model of epitaxial growth of GaAs from gas phase at unstable state
VO Voronin, SK Guba, MO Litvin
Modern Problems of Radio Engineering, Telecommunications and Computer …, 2002
Electrical and photoelectric properties of GaAs pin structures produced by liquid phase epitaxy
SK Guba, SI Krukovskii, VI Lukjanenko, RK Savkina, AB Smirnov, ...
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