G. Sun
G. Sun
Professor of Electrical Engineering, UMass Boston
Підтверджена електронна адреса в umb.edu
High-efficiency broadband meta-hologram with polarization-controlled dual images
WT Chen, KY Yang, CM Wang, YW Huang, G Sun, ID Chiang, CY Liao, ...
Nano letters 14 (1), 225-230, 2014
Aluminum plasmonic multicolor meta-hologram
YW Huang, WT Chen, WY Tsai, PC Wu, CM Wang, G Sun, DP Tsai
Nano letters 15 (5), 3122-3127, 2015
Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure mid-infrared laser
G Sun, RA Soref, HH and Cheng
Journal of Applied Physics 108, 033107, 2010
Versatile polarization generation with an aluminum plasmonic metasurface
PC Wu, WY Tsai, WT Chen, YW Huang, TY Chen, JW Chen, CY Liao, ...
Nano letters 17 (1), 445-452, 2017
Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode
G Sun, RA Soref, HH Cheng
Optics express 18 (19), 19957-19965, 2010
Practicable enhancement of spontaneous emission using surface plasmons
G Sun, JB Khurgin, RA Soref
Applied physics letters 90 (11), 111107, 2007
Practical enhancement of photoluminescence by metal nanoparticles
G Sun, JB Khurgin, RA Soref
Applied Physics Letters 94 (10), 101103, 2009
Active dielectric metasurface based on phase‐change medium
CH Chu, ML Tseng, J Chen, PC Wu, YH Chen, HC Wang, TY Chen, ...
Laser & Photonics Reviews 10 (6), 986-994, 2016
An optically pumped 2.5 μm GeSn laser on Si operating at 110 K
S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ...
Applied Physics Letters 109 (17), 171105, 2016
Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ...
Applied Physics Letters 105 (15), 151109, 2014
Optically pumped four-level infrared laser based on intersubband transitions in multiple quantum wells: feasibility study
G Sun, JB Khurgin
IEEE journal of quantum electronics 29 (4), 1104-1111, 1993
In search of the elusive lossless metal
JB Khurgin, G Sun
Applied Physics Letters 96 (18), 181102, 2010
Comparative analysis of spasers, vertical-cavity surface-emitting lasers and surface-plasmon-emitting diodes
JB Khurgin, G Sun
Nature Photonics 8 (6), 468, 2014
GeSn-based pin photodiodes with strained active layer on a Si wafer
HH Tseng, H Li, V Mashanov, YJ Yang, HH Cheng, GE Chang, RA Soref, ...
Applied Physics Letters 103 (23), 231907, 2013
Practicality of compensating the loss in the plasmonic waveguides using semiconductor gain medium
JB Khurgin, G Sun
Applied Physics Letters 100 (1), 011105, 2012
Scaling of losses with size and wavelength in nanoplasmonics and metamaterials
JB Khurgin, G Sun
Applied Physics Letters 99 (21), 211106, 2011
Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate
HH Tseng, KY Wu, H Li, V Mashanov, HH Cheng, G Sun, RA Soref
Applied physics letters 102 (18), 182106, 2013
Active region design of a terahertz GaN/Al0. 15Ga0. 85N quantum cascade laser
G Sun, RA Soref, JB Khurgin
Superlattices and Microstructures 37 (2), 107-113, 2005
Strain-free quantum cascade lasers based on -valley intersubband transitions
G Sun, HH Cheng, J Menendez, JB Khurgin, RA Soref
Applied physics letters 90 (25), 251105, 2007
Enhancement of luminescence efficiency using surface plasmon polaritons: figures of merit
JB Khurgin, G Sun, RA Soref
JOSA B 24 (8), 1968-1980, 2007
У даний момент система не може виконати операцію. Спробуйте пізніше.
Статті 1–20