Ravindra Nuggehalli
Ravindra Nuggehalli
Professor, Department of Physics, New Jersey Institute of Technology
Подтвержден адрес электронной почты в домене njit.edu
Название
Процитировано
Процитировано
Год
Temperature dependence of solar cell performance—an analysis
P Singh, NM Ravindra
Solar energy materials and solar cells 101, 36-45, 2012
5522012
On the Penn gap in semiconductors
NM Ravindra, S Auluck, VK Srivastava
Physica status solidi (b) 93 (2), K155-K160, 1979
3261979
Energy gap–refractive index relations in semiconductors–An overview
NM Ravindra, P Ganapathy, J Choi
Infrared physics & technology 50 (1), 21-29, 2007
3072007
Comments on the moss formula
VP Gupta, N Ravindra
physica status solidi (b) 100 (2), 715-719, 1980
1781980
Model based studies of some optical and electronic properties of narrow and wide gap materials
NM Ravindra, RP Bhardwaj, KS Kumar, VK Srivastava
Infrared Physics 21 (6), 369-381, 1981
1381981
VARIATION OF REFRACTIVE INDEX WITH ENERGY GAP IN SEMI-CONDUCTORS
NM Ravindra
1201979
Emissivity measurements and modeling of silicon-related materials: an overview
NM Ravindra, B Sopori, OH Gokce, SX Cheng, A Shenoy, L Jin, ...
International journal of thermophysics 22 (5), 1593-1611, 2001
1112001
Light emission from silicon: Some perspectives and applications
AT Fiory, NM Ravindra
Journal of Electronic Materials 32 (10), 1043-1051, 2003
1052003
Electronic polarizability as a function of the penn gap in semiconductors
NM Ravindra, VK Srivastava
Infrared Physics 20 (1), 67-69, 1980
1041980
Temperature-dependent emissivity of silicon-related materials and structures
NM Ravindra, S Abedrabbo, W Chen, FM Tong, AK Nanda, AC Speranza
IEEE Transactions on semiconductor manufacturing 11 (1), 30-39, 1998
1021998
Fowler-Nordheim tunneling in thin SiO2 films
NM Ravindra, J Zhao
Smart Materials and Structures 1 (3), 197, 1992
891992
Carrier concentration tuning of bandgap-reduced -type ZnO films by codoping of Cu and Ga for improving photoelectrochemical response
S Shet, KS Ahn, Y Yan, T Deutsch, KM Chrustowski, J Turner, ...
Journal of Applied Physics 103 (7), 073504, 2008
882008
Temperature dependence of the energy gap in semiconductors
NM Ravindra, VK Srivastava
Journal of Physics and chemistry of Solids 40 (10), 791-793, 1979
691979
Optical properties of GeO 2
NM Ravindra, RA Weeks, DL Kinser
Physical Review B 36 (11), 6132, 1987
681987
Optical properties of vanadium oxides-an analysis
C Lamsal, NM Ravindra
Journal of materials science 48 (18), 6341-6351, 2013
662013
Synthesis and characterization of band gap-reduced ZnO: N and ZnO:(Al, N) films for photoelectrochemical water splitting
S Shet, KS Ahn, T Deutsch, H Wang, N Ravindra, Y Yan, J Turner, ...
Journal of Materials Research 25 (1), 69-75, 2010
632010
Influence of gas ambient on the synthesis of co-doped ZnO:(Al, N) films for photoelectrochemical water splitting
S Shet, KS Ahn, T Deutsch, H Wang, R Nuggehalli, Y Yan, J Turner, ...
Journal of Power Sources 195 (17), 5801-5805, 2010
582010
Silicon device processing in H-ambients: H-diffusion mechanisms and influence on electronic properties
B Sopori, Y Zhang, NM Ravindra
Journal of Electronic Materials 30 (12), 1616-1627, 2001
562001
Silicon oxidation and Si–SiO 2 interface of thin oxides
NM Ravindra, J Narayan, D Fathy, JK Srivastava, EA Irene
Journal of Materials Research 2 (2), 216-221, 1987
551987
Calculation of emissivity of Si wafers
B Sopori, W Chen, J Madjdpour, NM Ravindra
Journal of Electronic Materials 28 (12), 1385-1389, 1999
531999
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Статьи 1–20