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Alison A. Baski
Alison A. Baski
Подтвержден адрес электронной почты в домене cpp.edu
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Процитировано
Процитировано
Год
Growth of self-assembled n-alkyltrichlorosilane films on Si (100) investigated by atomic force microscopy
K Bierbaum, M Grunze, AA Baski, LF Chi, W Schrepp, H Fuchs
Langmuir 11 (6), 2143-2150, 1995
2991995
The structure of silicon surfaces from (001) to (111)
AA Baski, SC Erwin, LJ Whitman
Surface Science 392 (1-3), 69-85, 1997
2551997
Aluminum on the Si (100) surface: Growth of the first monolayer
J Nogami, AA Baski, CF Quate
Physical Review B 44 (3), 1415, 1991
2241991
The origin of the superstructure in Bi2Sr2CaCu2O8+ δ as revealed by scanning tunneling microscopy
MD Kirk, J Nogami, AA Baski, DB Mitzi, A Kapitulnik, TH Geballe, ...
Science 242 (4886), 1673-1675, 1988
2111988
A stable high-index surface of silicon: Si (5 5 12)
AA Baski, LJ Whitman, SC Erwin
Science 269 (5230), 1556-1560, 1995
1641995
Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si (001) 2× 1-Sb
M Richter, JC Woicik, J Nogami, P Pianetta, KE Miyano, AA Baski, ...
Physical review letters 65 (27), 3417, 1990
1631990
Highly efficient electron field emission from graphene oxide sheets supported by nickel nanotip arrays
D Ye, S Moussa, JD Ferguson, AA Baski, MS El-Shall
Nano letters 12 (3), 1265-1268, 2012
1562012
√ 3×√ 3→ 6× 6 phase transition on the Au/Si (111) surface
J Nogami, AA Baski, CF Quate
Physical Review Letters 65 (13), 1611, 1990
1411990
Indium-induced reconstructions of the Si (100) surface
AA Baski, J Nogami, CF Quate
Physical Review B 43 (11), 9316, 1991
1331991
Epitaxial growth of silver on mica as studied by AFM and STM
AA Baski, H Fuchs
Surface Science 313 (3), 275-288, 1994
1301994
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
D Huang, P Visconti, KM Jones, MA Reshchikov, F Yun, AA Baski, T King, ...
Applied Physics Letters 78 (26), 4145-4147, 2001
1172001
Quasiperiodic nanoscale faceting of high-index Si surfaces
AA Baski, LJ Whitman
Physical review letters 74 (6), 956, 1995
1161995
Surface photovoltage in undoped -type GaN
MA Reshchikov, M Foussekis, AA Baski
Journal of Applied Physics 107 (11), 113535, 2010
1092010
Epitaxial lateral overgrowth of semipolar GaN on -plane sapphire by metalorganic chemical vapor deposition
X Ni, Ü Özgür, AA Baski, H Morkoç, L Zhou, DJ Smith, CA Tran
Applied physics letters 90 (18), 182109, 2007
1062007
Gallium growth and reconstruction on the Si (100) surface
AA Baski, J Nogami, CF Quate
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (1 …, 1990
1041990
Structure of the Sb-terminated Si (100) surface
J Nogami, AA Baski, CF Quate
104*
Si (111)-5× 1-Au reconstruction as studied by scanning tunneling microscopy
AA Baski, J Nogami, CF Quate
Physical Review B 41 (14), 10247, 1990
1031990
Structure and Stability of
SC Erwin, AA Baski, LJ Whitman
Physical review letters 77 (4), 687, 1996
1021996
Tin-induced reconstructions of the Si (100) surface
AA Baski, CF Quate, J Nogami
Physical Review B 44 (20), 11167, 1991
961991
1-D nanostructures grown on the Si (5 5 12) surface
AA Baski, KM Saoud, KM Jones
Applied surface science 182 (3-4), 216-222, 2001
932001
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