David Kohen
David Kohen
ASM
Підтверджена електронна адреса в asm.com
НазваПосиланняРік
Cu2ZnSn(S 1-x Se x)4 based solar cell produced by selenization of vacuum deposited precursors
L Grenet, S Bernardi, D Kohen, C Lepoittevin, S Noël, N Karst, A Brioude, ...
Solar Energy Materials and Solar Cells 101, 11-14, 2012
872012
Electrical properties of III-V/oxide interfaces
G Brammertz, HC Lin, K Martens, AR Alian, C Merckling, J Penaud, ...
ECS transactions 19 (5), 375-386, 2009
662009
Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process
KH Lee, S Bao, L Zhang, D Kohen, E Fitzgerald, CS Tan
Applied Physics Express 9 (8), 086501, 2016
302016
The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD–Application to a 200mm GaAs virtual substrate
D Kohen, S Bao, KH Lee, KEK Lee, CS Tan, SF Yoon, EA Fitzgerald
Journal of Crystal Growth 421, 58-65, 2015
272015
Cu2ZnSn (S1− xSex) 4 thin films for photovoltaic applications: Influence of the precursor stacking order on the selenization process
G Altamura, L Grenet, C Bougerol, E Robin, D Kohen, H Fournier, ...
Journal of Alloys and Compounds 588, 310-315, 2014
242014
Aluminum catalyzed growth of silicon nanowires: Al atom location and the influence of silicon precursor pressure on the morphology
D Kohen, C Cayron, E De Vito, V Tileli, P Faucherand, C Morin, A Brioude, ...
Journal of Crystal Growth 341 (1), 12-18, 2012
232012
Selective epitaxial growth of high-P Si: P for dource/drain formation in advanced Si nFETs
E Rosseel, SK Dhayalan, A Hikavyy, R Loo, H Profijt, D Kohen, S Kubicek, ...
ECS Transactions 75 (8), 347-359, 2016
212016
Fundamentals of Ge1− xSnx and SiyGe1− x-ySnx RPCVD epitaxy
J Margetis, A Mosleh, SA Ghetmiri, S Al-Kabi, W Dou, W Du, N Bhargava, ...
Materials Science in Semiconductor Processing 70, 38-43, 2017
202017
Molecular beam epitaxy passivation studies of Ge and III–V semiconductors for advanced CMOS
C Merckling, J Penaud, D Kohen, F Bellenger, A Alian, G Brammertz, ...
Microelectronic Engineering 86 (7-9), 1592-1595, 2009
202009
Enabling the integrated circuits of the future
EA Fitzgerald, KE Lee, SF Yoon, SJ Chua, CS Tan, T Palacios, X Zhou, ...
2015 IEEE International Conference on Electron Devices and Solid-State …, 2015
162015
SiGe and III-V materials and devices: New HEMT and LED elements in 0.18-micron CMOS process and design
EA Fitzgerald, KE Lee, SF Yoon, SJ Chua, CS Tan, GI Ng, X Zhou, ...
ECS Transactions 75 (8), 439-446, 2016
142016
Heteroepitaxial growth of In0.30Ga0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer
D Kohen, XS Nguyen, S Yadav, A Kumar, RI Made, C Heidelberger, ...
AIP Advances 6 (8), 085106, 2016
112016
Monolithic integration of III–V HEMT and Si-CMOS through TSV-less 3D wafer stacking
KH Lee, S Bao, D Kohen, CC Huang, KEK Lee, E Fitzgerald, CS Tan
2015 IEEE 65th Electronic Components and Technology Conference (ECTC), 560-565, 2015
102015
Enhanced photovoltaic performance of vapor–liquid–solid grown silicon nanowire array with radial heterojunction
D Kohen, C Morin, P Faucherand, A Brioude, S Perraud
physica status solidi (a) 211 (5), 1143-1149, 2014
102014
Patterned growth of high aspect ratio silicon wire arrays at moderate temperature
C Morin, D Kohen, V Tileli, P Faucherand, M Levis, A Brioude, B Salem, ...
Journal of Crystal Growth 321 (1), 151-156, 2011
102011
Al catalyzed growth of silicon nanowires and subsequent in situ dry etching of the catalyst for photovoltaic application
D Kohen, V Tileli, C Cayron, P Faucherand, C Morin, J Dufourcq, S Noël, ...
physica status solidi (a) 208 (11), 2676-2680, 2011
92011
Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers
D Kohen, XS Nguyen, RI Made, C Heidelberger, KH Lee, KEK Lee, ...
Journal of Crystal Growth 478, 64-70, 2017
72017
Enhanced B doping in CVD-grown GeSn: B using B δ-doping layers
D Kohen, A Vohra, R Loo, W Vandervorst, N Bhargava, J Margetis, J Tolle
Journal of Crystal Growth 483, 285-290, 2018
62018
Performance potential analysis of a 21.3% GaAs on industrial c-Si tandem solar cell
Z Ren, N Sahraei, Z Liu, Y Zhu, H Hou, H Liu, JKC Wong, S Raj, ...
Submitted to Solar Energy Materials and Solar Cells, 2016
62016
Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe
B Wang, C Wang, DA Kohen, RI Made, KEK Lee, T Kim, T Milakovich, ...
Journal of Crystal Growth 441, 78-83, 2016
62016
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