Підписатись
Joel Davidsson
Joel Davidsson
Підтверджена електронна адреса в liu.se
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Посилання
Посилання
Рік
Identification of Si-vacancy related room-temperature qubits in silicon carbide
V Ivády, J Davidsson, NT Son, T Ohshima, IA Abrikosov, A Gali
Physical Review B 96 (16), 161114, 2017
1002017
First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC
J Davidsson, V Ivády, R Armiento, NT Son, A Gali, IA Abrikosov
New Journal of Physics 20 (2), 023035, 2018
652018
Stabilization of point-defect spin qubits by quantum wells
V Ivády, J Davidsson, N Delegan, AL Falk, PV Klimov, SJ Whiteley, ...
Nature communications 10 (1), 5607, 2019
552019
Identification of divacancy and silicon vacancy qubits in 6H-SiC
J Davidsson, V Ivády, R Armiento, T Ohshima, NT Son, A Gali, ...
Applied Physics Letters 114 (11), 2019
402019
ADAQ: Automatic workflows for magneto-optical properties of point defects in semiconductors
J Davidsson, V Ivády, R Armiento, IA Abrikosov
Computer Physics Communications 269, 108091, 2021
182021
Theoretical polarization of zero phonon lines in point defects
J Davidsson
Journal of Physics: Condensed Matter 32 (38), 385502, 2020
152020
Exhaustive characterization of modified Si vacancies in 4H-SiC
J Davidsson, R Babar, D Shafizadeh, IG Ivanov, V Ivády, R Armiento, ...
Nanophotonics 11 (20), 4565-4580, 2022
82022
Color Centers in Semiconductors for Quantum Applications: A High-Throughput Search of Point Defects in SiC
J Davidsson
Linköping University Electronic Press, 2021
72021
Energy‐surfaces from the upper bound of the Pauli kinetic energy
K Finzel, J Davidsson, IA Abrikosov
International Journal of Quantum Chemistry 116 (18), 1337-1341, 2016
62016
Ab Initio Theory of Si-Vacancy Quantum Bits in 4H and 6H-SiC
V Ivády, J Davidsson, NT Son, T Ohshima, IA Abrikosov, Á Gali
Materials Science Forum 924, 895-900, 2018
42018
Absorption versus adsorption: high-throughput computation of impurities in 2D materials
J Davidsson, F Bertoldo, KS Thygesen, R Armiento
npj 2D Materials and Applications 7 (1), 26, 2023
22023
Enhanced stability of defect-based qubits in quantum wells
V Ivády, J Davidsson, AL Falk, PV Klimov, NT Son, DD Awschalom, ...
Preprint at http://arxiv. org/abs/1905.11801, 2019
22019
Chlorine vacancy in : An NV-like defect with telecom-wavelength emission
O Bulancea-Lindvall, J Davidsson, R Armiento, IA Abrikosov
Physical Review B 108 (22), 224106, 2023
12023
Na in Diamond: High Spin Defects Revealed by the ADAQ High-Throughput Computational Database
J Davidsson, W Stenlund, AS Parackal, R Armiento, IA Abrikosov
arXiv preprint arXiv:2306.11116, 2023
12023
High-throughput identification of point defects in SiC
J Davidsson, V Ivady, R Armiento, I Abrikosov
APS March Meeting Abstracts 2022, G67. 012, 2022
12022
First Principles Investigations of NV-like centers in oxides
V Somjit, J Davidsson, Y Jin, G Galli
Bulletin of the American Physical Society, 2024
2024
The ADAQ defect database for quantum applications
J Davidsson, R Armiento, IA Abrikosov
Bulletin of the American Physical Society, 2024
2024
Selection rules in the excitation of the divacancy and the nitrogen-vacancy pair in 4H-and 6H-SiC
D Shafizadeh, J Davidsson, T Ohshima, IA Abrikosov, NT Son, IG Ivanov
arXiv preprint arXiv:2311.15124, 2023
2023
ADAQ-SYM: Automated Symmetry Analysis of Defect Orbitals
W Stenlund, J Davidsson, V Ivády, R Armiento, IA Abrikosov
arXiv preprint arXiv:2307.04381, 2023
2023
The Chlorine Vacancy in 4H-SiC: An NV-like Defect With Telecom Emission
O Bulancea-Lindvall, J Davidsson, R Armiento, IA Abrikosov
arXiv preprint arXiv:2304.14525, 2023
2023
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