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Sergey Tarelkin
Sergey Tarelkin
TISNCM, VNIIOFI
Подтвержден адрес электронной почты в домене tisnum.ru
Название
Процитировано
Процитировано
Год
Development of nuclear microbattery prototype based on Schottky barrier diamond diodes
V Bormashov, S Troschiev, A Volkov, S Tarelkin, E Korostylev, ...
physica status solidi (a) 212 (11), 2539-2547, 2015
892015
Electrical properties of the high quality boron-doped synthetic single-crystal diamonds grown by the temperature gradient method
VS Bormashov, SA Tarelkin, SG Buga, MS Kuznetsov, SA Terentiev, ...
Diamond and related materials 35, 19-23, 2013
872013
High power density nuclear battery prototype based on diamond Schottky diodes
VS Bormashov, SY Troschiev, SA Tarelkin, AP Volkov, DV Teteruk, ...
Diamond and related materials 84, 41-47, 2018
862018
Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3
AY Polyakov, NB Smirnov, IV Shchemerov, D Gogova, SA Tarelkin, ...
Journal of Applied Physics 123 (11), 2018
852018
Power high-voltage and fast response Schottky barrier diamond diodes
VD Blank, VS Bormashov, SA Tarelkin, SG Buga, MS Kuznetsov, ...
Diamond and Related Materials 57, 32-36, 2015
832015
Power diamond vertical Schottky barrier diode with 10 A forward current
S Tarelkin, V Bormashov, S Buga, A Volkov, D Teteruk, N Kornilov, ...
Physica status solidi (a) 212 (11), 2621-2627, 2015
522015
Thin large area vertical Schottky barrier diamond diodes with low on-resistance made by ion-beam assisted lift-off technique
VS Bormashov, SA Terentiev, SG Buga, SA Tarelkin, AP Volkov, ...
Diamond and Related Materials 75, 78-84, 2017
462017
Ultrawide-bandgap pn heterojunction of diamond/β-Ga2O3 for a solar-blind photodiode
H Kim, S Tarelkin, A Polyakov, S Troschiev, S Nosukhin, M Kuznetsov, ...
ECS Journal of Solid State Science and Technology 9 (4), 045004, 2020
422020
Spatially controlled fabrication of single NV centers in IIa HPHT diamond
SD Trofimov, SA Tarelkin, SV Bolshedvorskii, VS Bormashov, ...
Optical Materials Express 10 (1), 198-207, 2020
412020
Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy
IH Lee, AY Polyakov, EB Yakimov, NB Smirnov, IV Shchemerov, ...
Applied Physics Letters 110 (11), 2017
362017
Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN
AY Polyakov, NB Smirnov, EB Yakimov, SA Tarelkin, AV Turutin, ...
Journal of Alloys and Compounds 686, 1044-1052, 2016
302016
Comparative study of different metals for Schottky barrier diamond betavoltaic power converter by EBIC technique
S Tarelkin, V Bormashov, E Korostylev, S Troschiev, D Teteruk, ...
physica status solidi (a) 213 (9), 2492-2497, 2016
292016
Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN
IH Lee, AY Polyakov, NB Smirnov, EB Yakimov, SA Tarelkin, AV Turutin, ...
Journal of Applied Physics 119 (20), 2016
272016
Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs
IH Lee, AY Polyakov, SM Hwang, NM Shmidt, EI Shabunina, ...
Applied Physics Letters 111 (6), 2017
252017
Superconductivity in bulk polycrystalline metastable phases of Sb2Te3 and Bi2Te3 quenched after high-pressure–high-temperature treatment
SG Buga, VA Kulbachinskii, VG Kytin, GA Kytin, IA Kruglov, NA Lvova, ...
Chemical Physics Letters 631, 97-102, 2015
232015
Thermal conductivity of synthetic boron-doped single-crystal HPHT diamond from 20 to 400 K
D Prikhodko, S Tarelkin, V Bormashov, A Golovanov, M Kuznetsov, ...
MRS communications 6 (2), 71-76, 2016
192016
Optimization of the coherence properties of diamond samples with an intermediate concentration of NV centers
OR Rubinas, VV Soshenko, SV Bolshedvorskii, AI Zeleneev, AS Galkin, ...
Results in Physics 21, 103845, 2021
182021
Diamond microstructuring by deep anisotropic reactive ion etching
AV Golovanov, VS Bormashov, NV Luparev, SA Tarelkin, SY Troschiev, ...
physica status solidi (a) 215 (22), 1800273, 2018
172018
Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates
AY Polyakov, VI Nikolaev, SA Tarelkin, AI Pechnikov, SI Stepanov, ...
Journal of Applied Physics 129 (18), 2021
162021
Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition
IH Lee, AY Polyakov, NB Smirnov, EB Yakimov, SA Tarelkin, AV Turutin, ...
Applied Physics Express 9 (6), 061002, 2016
152016
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