Jacek Rabkowski
Jacek Rabkowski
KTH Royal Institute of Technology/Warsaw University of Technology
Підтверджена електронна адреса в ee.pw.edu.pl
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Посилання
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Silicon carbide power transistors: A new era in power electronics is initiated
J Rabkowski, D Peftitsis, HP Nee
IEEE Industrial Electronics Magazine 6 (2), 17-26, 2012
3582012
High-power modular multilevel converters with SiC JFETs
D Peftitsis, G Tolstoy, A Antonopoulos, J Rabkowski, JK Lim, M Bakowski, ...
IEEE Transactions on Power Electronics 27 (1), 28-36, 2011
2112011
Short-circuit protection circuits for silicon-carbide power transistors
DP Sadik, J Colmenares, G Tolstoy, D Peftitsis, M Bakowski, J Rabkowski, ...
IEEE Transactions on Industrial Electronics 63 (4), 1995-2004, 2015
1272015
Challenges regarding parallel connection of SiC JFETs
D Peftitsis, R Baburske, J Rabkowski, J Lutz, G Tolstoy, HP Nee
IEEE Transactions on Power Electronics 28 (3), 1449-1463, 2012
1212012
Low-loss high-performance base-drive unit for SiC BJTs
J Rabkowski, G Tolstoy, D Peftitsis, HP Nee
IEEE Transactions on Power Electronics 27 (5), 2633-2643, 2011
1012011
Gate and base drivers for silicon carbide power transistors: An overview
D Peftitsis, J Rabkowski
IEEE Transactions on Power Electronics 31 (10), 7194-7213, 2015
912015
Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs
DP Sadik, J Colmenares, D Peftitsis, JK Lim, J Rabkowski, HP Nee
2013 15th European Conference on Power Electronics and Applications (EPE), 1-10, 2013
832013
Parallel-operation of discrete SiC BJTs in a 6-kW/250-kHz DC/DC boost converter
J Rabkowski, D Peftitsis, HP Nee
IEEE transactions on power electronics 29 (5), 2482-2491, 2013
622013
High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modules
J Colmenares, D Peftitsis, J Rabkowski, DP Sadik, G Tolstoy, HP Nee
IEEE Transactions on Industry Applications 51 (6), 4664-4676, 2015
592015
Design steps toward a 40-kVA SiC JFET inverter with natural-convection cooling and an efficiency exceeding 99.5%
J Rabkowski, D Peftitsis, HP Nee
IEEE Transactions on Industry Applications 49 (4), 1589-1598, 2013
522013
Design steps towards a 40-kVA SiC inverter with an efficiency exceeding 99.5%
J Rabkowski, D Peftitsis, HP Nee
2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and …, 2012
502012
Self-powered gate driver for normally on silicon carbide junction field-effect transistors without external power supply
D Peftitsis, J Rabkowski, HP Nee
IEEE transactions on power electronics 28 (3), 1488-1501, 2012
482012
Analysis and experimental verification of the influence of fabrication process tolerances and circuit parasitics on transient current sharing of parallel-connected SiC JFETs
JK Lim, D Peftitsis, J Rabkowski, M Bakowski, HP Nee
IEEE transactions on power electronics 29 (5), 2180-2191, 2013
432013
Pulse width modulation methods for bidirectional/high-performance Z-source inverter
J Rabkowski, R Barlik, M Nowak
2008 IEEE Power Electronics Specialists Conference, 2750-2756, 2008
432008
On the design process of a 6-kVA quasi-Z-inverter employing SiC power devices
M Zdanowski, D Peftitsis, S Piasecki, J Rabkowski
IEEE Transactions on Power Electronics 31 (11), 7499-7508, 2016
402016
A discretized proportional base driver for silicon carbide bipolar junction transistors
G Tolstoy, D Peftitsis, J Rabkowski, PR Palmer, HP Nee
IEEE Transactions on Power Electronics 29 (5), 2408-2417, 2013
352013
Design and evaluation of reduced self-capacitance inductor in DC/DC converters with fast-switching SiC transistors
M Zdanowski, K Kostov, J Rabkowski, R Barlik, HP Nee
IEEE transactions on power electronics 29 (5), 2492-2499, 2013
342013
Experimental comparison of dc-dc boost converters with SiC JFETs and SiC bipolar transistors
D Peftitsis, J Rabkowski, G Tolstoy, HP Nee
Proceedings of the 2011 14th European Conference on Power Electronics and …, 2011
312011
A simple high-performance low-loss current-source driver for SiC bipolar transistors
J Rabkowski, D Peftitsis, HP Nee, M Zdanowski
Proceedings of The 7th International Power Electronics and Motion Control …, 2012
302012
Analysis of short-circuit conditions for silicon carbide power transistors and suggestions for protection
DP Sadik, J Colmenares, D Peftitsis, G Tolstoy, J Rabkowski, HP Nee
2014 16th European Conference on Power Electronics and Applications, 1-10, 2014
292014
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