Haichang Lu

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John RobertsonProfessor of Electronics, University of CambridgeVerified email at eng.cam.ac.uk
郭宇铮Yuzheng Guo武汉大学Wuhan UniversityVerified email at whu.edu.cn
Weisheng ZhaoFert Beijing Institute, Beihang UniversityVerified email at buaa.edu.cn
Stewart ClarkProfessor of Physics, University of DurhamVerified email at durham.ac.uk
Peng LiStanford UniversityVerified email at stanford.edu
Shuyuan ShiBeihang University, National University of SingaporeVerified email at buaa.edu.cn
Hiroshi Naganuma (永沼博)Tohoku University (東北大学)Verified email at tohoku.ac.jp
Shan ZhengUniversity of CambridgeVerified email at cam.ac.uk
Dameng LiuState Key Laboratory of Tribology, Tsinghua UniversityVerified email at tsinghua.edu.cn
Hongfei LiUniversity of CambridgeVerified email at cam.ac.uk
thomas hauetVerified email at univ-lorraine.fr
Sylvie MigotIE CNRSVerified email at univ-lorraine.fr
Stephane ManginInstitut Jean Lamour / Universite de LorraineVerified email at univ-lorraine.fr
Yannick Fagot-RevuratProfessor of physics, Lorraine UniversityVerified email at univ-lorraine.fr
Jacob W. MartinCurtin UniversityVerified email at curtin.edu.au
Markus KraftUniversity of Cambridge, Nanyang Technological UniversityVerified email at cam.ac.uk
Zhaofu ZHANGWuhan University, University of Cambridge, Hong Kong University of Science and TechnologyVerified email at whu.edu.cn
Xiaoyang LinBeihang UniversityVerified email at buaa.edu.cn
Jack A. Alexander-WebberDepartment of Engineering, University of CambridgeVerified email at cam.ac.uk
Sungsik LEEProfessor, Pusan National UniversityVerified email at pusan.ac.kr

Haichang Lu

Beihang University | University of Cambridge | Peking University

Verified email at buaa.edu.cn

2D Material Spintronics Interfaces Phase Change


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Passivating the sulfur vacancy in monolayer MoS2 H Lu, A Kummel, J Robertson APL Materials 6 (6), 2018	78	2018
The metal–insulator phase change in vanadium dioxide and its applications H Lu, S Clark, Y Guo, J Robertson Journal of Applied Physics 129 (24), 2021	33	2021
Insertion of an ultrathin Al 2 O 3 interfacial layer for Schottky barrier height reduction in WS 2 field-effect transistors S Zheng, H Lu, H Liu, D Liu, J Robertson Nanoscale 11 (11), 4811-4821, 2019	29	2019
Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe₃GeTe₂ induced by topological insulators H Wang, H Wu, J Zhang, Y Liu, D Chen, C Pandey, J Yin, D Wei, N Lei, ... Nature communications 14 (1), 5173, 2023	28	2023
Modeling of surface gap state passivation and Fermi level de-pinning in solar cells H Lu, Y Guo, H Li, J Robertson Applied Physics Letters 114 (22), 2019	28	2019
Band edge states, intrinsic defects, and dopants in monolayer HfS2 and SnS2 H Lu, Y Guo, J Robertson Applied Physics Letters 112 (6), 2018	25	2018
Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe₄GeTe₂ far above room temperature H Wang, H Lu, Z Guo, A Li, P Wu, J Li, W Xie, Z Sun, P Li, H Damas, ... Nature Communications 14 (1), 2483, 2023	24	2023
Comparison of hexagonal boron nitride and MgO tunnel barriers in Fe, Co magnetic tunnel junctions H Lu, J Robertson, H Naganuma Applied Physics Reviews 8 (3), 2021	24	2021
Modelling the enthalpy change and transition temperature dependence of the metal–insulator transition in pure and doped vanadium dioxide H Lu, S Clark, Y Guo, J Robertson Physical Chemistry Chemical Physics 22 (24), 13474-13478, 2020	14	2020
Charge transfer doping of graphene without degrading carrier mobility H Lu, Y Guo, J Robertson Journal of Applied Physics 121 (22), 2017	14	2017
Chemical trends of Schottky barrier behavior on monolayer hexagonal B, Al, and Ga nitrides H Lu, Y Guo, J Robertson Journal of Applied Physics 120 (6), 2016	13	2016
Hybrid band offset calculation for heterojunction interfaces between disparate semiconductors Z Zhang, Y Guo, H Lu, SJ Clark, J Robertson Applied Physics Letters 116 (13), 2020	12	2020
Atomic structure and electronic structure of disordered graphitic carbon nitride H Lu, Y Guo, JW Martin, M Kraft, J Robertson Carbon 147, 483-489, 2019	12	2019
Electronic structure of metallic and insulating phases of vanadium dioxide and its oxide alloys H Lu, Y Guo, J Robertson Physical Review Materials 3 (9), 094603, 2019	11	2019
Spin manipulation by giant valley-Zeeman spin-orbit field in atom-thick WSe2 X Wang, W Yang, W Yang, Y Cao, X Lin, G Wei, H Lu, P Tang, W Zhao Applied Physics Reviews 9 (3), 2022	10	2022
Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions H Lu, Y Guo, J Robertson ACS Applied Materials & Interfaces 13 (39), 47226-47235, 2021	10	2021
Microstructure scaling of metal–insulator transition properties of VO2 films KM Niang, G Bai, H Lu, J Robertson Applied Physics Letters 118 (12), 2021	8	2021
Room temperature energy-efficient spin-orbit torque switching in wafer-scale all-vdW heterostructure H Wang, H Wu, Y Liu, D Chen, C Pandey, J Yin, D Wei, N Lei, J Zhang, ... arXiv preprint arXiv:2111.14128, 2021	7	2021
Density functional theory studies of the metal–insulator transition in vanadium dioxide alloys H Lu, J Robertson physica status solidi (b) 256 (12), 1900210, 2019	7	2019
Dirac-point shift by carrier injection barrier in graphene field-effect transistor operation at room temperature S Lee, A Nathan, J Alexander-Webber, P Braeuninger-Weimer, ... ACS applied materials & interfaces 10 (13), 10618-10621, 2018	3	2018

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