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Volodymyr Sheremet
Volodymyr Sheremet
Verified email at vcu.edu
Title
Cited by
Cited by
Year
Mechanism of contact resistance formation in ohmic contacts with high dislocation density
AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, ...
Journal of applied physics 111 (8), 2012
502012
Mechanism of dislocation-governed charge transport in Schottky diodes based on gallium nitride
AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ...
Semiconductors 42, 689-693, 2008
312008
Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts
AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, AV Sachenko, ...
arXiv preprint arXiv:1104.1030, 2011
232011
The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes
V Sheremet, M Genç, M Elçi, N Sheremet, A Aydınlı, I Altuntaş, K Ding, ...
Superlattices and Microstructures 111, 1177-1194, 2017
192017
Temperature dependence of the contact resistance of ohmic contacts to III–V compounds with a high dislocation density
AV Sachenko, AE Belyaev, AV Bobyl, NS Boltovets, VN Ivanov, ...
Semiconductors 46, 334-341, 2012
172012
Distributed contact flip chip InGaN/GaN blue LED; comparison with conventional LEDs
AA M. Genç, V. Sheremet, M. Elçi, A.E. Kasapoğlu, İ. Altuntaş, İ. Demir, G ...
Superlattices and Microstructures 128, 9-13, 2019
142019
High‐Quality CsPbBr3 Perovskite Films with Modal Gain above 10 000 cm−1 at Room Temperature
DA Tatarinov, SS Anoshkin, IA Tsibizov, V Sheremet, F Isik, ...
Advanced Optical Materials 11 (7), 2202407, 2023
132023
Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors
V Sheremet, M Genç, N Gheshlaghi, M Elçi, N Sheremet, A Aydınlı, ...
Superlattices and Microstructures 113, 623-634, 2018
132018
Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si
AV Sachenko, AE Belyaev, NS Boltovets, AO Vinogradov, VP Kladko, ...
Journal of applied physics 112 (6), 2012
132012
Metrological aspects of measuring resistance of ohmic contacts
VN Sheremet
Radioelectronics and communications systems 53, 119-128, 2010
132010
InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors
V Sheremet, N Gheshlaghi, M Sözen, M Elçi, N Sheremet, A Aydınlı, ...
Superlattices and Microstructures 116, 253-261, 2018
112018
Temperature dependence of contact resistance for Au-Ti-Pd2Si-n +-Si ohmic contacts subjected to microwave irradiation
AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, AV Sachenko, ...
Semiconductors 46, 330-333, 2012
112012
On the tunnel mechanism of current flow in Au-TiBx-n-GaN-i-Al2O3 Schottky barrier diodes
AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ...
Semiconductor Physics, Quantum Electronics & Optoelectronics 10 (3), 1-5, 2007
92007
Temperature dependences of the contact resistivity in ohmic contacts to n +-InN
AV Sachenko, AE Belyaev, NS Boltovets, PN Brunkov, VN Jmerik, ...
Semiconductors 49, 461-471, 2015
82015
Resistance formation mechanisms for contacts to n ‐GaN and n ‐AlN with high dislocation density
AV Sachenko, AE Belyaev, NS Boltovets, YV Zhilyaev, VP Klad'ko, ...
physica status solidi c 10 (3), 498-500, 2013
82013
Resistance formation mechanisms for contacts to n ‐GaN and n ‐AlN with high dislocation density
AV Sachenko, AE Belyaev, NS Boltovets, YV Zhilyaev, VP Klad'ko, ...
physica status solidi c 10 (3), 498-500, 2013
72013
The mechanism of contact-resistance formation on lapped n-Si surfaces
AV Sachenko, AE Belyaev, NS Boltovets, AO Vinogradov, ...
Semiconductors 47, 449-454, 2013
72013
Development of high-stable contact systems to gallium nitride microwave diodes
AE Belyaev, NS Boltovets, VN Ivanov, LM Kapitanchuk, VP Kladko, ...
Semiconductor Physics Quantum Electronics & Optoelectronics, 2007
62007
The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range
AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, SA Vitusevich, ...
Technical Physics Letters 42, 649-651, 2016
52016
Effect of microwave irradiation on the resistance of Au-TiB x -Ge-Au-n-n +-n ++-GaAs(InP) ohmic contacts
AE Belyaev, AV Sachenko, NS Boltovets, VN Ivanov, RV Konakova, ...
Semiconductors 46, 541-544, 2012
42012
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