Volodymyr Sheremet
Volodymyr Sheremet
Підтверджена електронна адреса в bilkent.edu.tr
НазваПосиланняРік
Mechanism of contact resistance formation in ohmic contacts with high dislocation density
AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, ...
Journal of applied physics 111 (8), 083701, 2012
402012
Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride
AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ...
Semiconductors 42 (6), 689-693, 2008
282008
Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts
AE Belyaev, NS Boltovets, RV Konakova, Y Kudryk, AV Sachenko, ...
arXiv preprint arXiv:1104.1030, 2011
182011
Features of temperature dependence of contact resistivity in ohmic contacts on lapped n-Si
AV Sachenko, AE Belyaev, NS Boltovets, AO Vinogradov, VP Kladko, ...
Journal of applied physics 112 (6), 063703, 2012
112012
Temperature dependence of the contact resistance of ohmic contacts to III–V compounds with a high dislocation density
AV Sachenko, AE Belyaev, AV Bobyl, NS Boltovets, VN Ivanov, ...
Semiconductors 46 (3), 334-341, 2012
112012
Temperature dependence of contact resistance for Au-Ti-Pd2Si-n +-Si ohmic contacts subjected to microwave irradiation
AE Belyaev, NS Boltovets, RV Konakova, YY Kudryk, AV Sachenko, ...
Semiconductors 46 (3), 330-333, 2012
102012
Metrological aspects of measuring resistance of ohmic contacts
VN Sheremet
Radioelectronics and Communications Systems 53 (3), 119-128, 2010
82010
On the tunnel mechanism of current flow in Au-TiBx-n-GaN-i-Al2O3 Schottky barrier diodes
AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ...
Semiconductor Physics, Quantum Electronics & Optoelectronics 10 (3), 1-5, 2007
82007
Temperature dependences of the contact resistivity in ohmic contacts to n +-InN
AV Sachenko, AE Belyaev, NS Boltovets, PN Brunkov, VN Jmerik, ...
Semiconductors 49 (4), 461-471, 2015
72015
Resistance formation mechanisms for contacts to n ‐GaN and n ‐AlN with high dislocation density
AV Sachenko, AE Belyaev, NS Boltovets, YV Zhilyaev, VP Klad'ko, ...
physica status solidi c 10 (3), 498-500, 2013
72013
The mechanism of contact-resistance formation on lapped n-Si surfaces
AV Sachenko, AE Belyaev, NS Boltovets, AO Vinogradov, ...
Semiconductors 47 (3), 449-454, 2013
72013
Resistance formation mechanisms for contacts to n ‐GaN and n ‐AlN with high dislocation density
AV Sachenko, AE Belyaev, NS Boltovets, YV Zhilyaev, VP Klad'ko, ...
physica status solidi c 10 (3), 498-500, 2013
62013
The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes
V Sheremet, M Genç, M Elçi, N Sheremet, A Aydınlı, I Altuntaş, K Ding, ...
Superlattices and Microstructures 111, 1177-1194, 2017
52017
Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures
AE Belyaev, NS Boltovets, VN Ivanov, VP Kladko, RV Konakova, ...
Semiconductor Physics Quantum Electronics & Optoelectronics, 2008
52008
Development of high-stable contact systems to gallium nitride microwave diodes
AE Belyaev, NS Boltovets, VN Ivanov, LM Kapitanchuk, VP Kladko, ...
Semiconductor Physics Quantum Electronics & Optoelectronics, 2007
52007
Effect of microwave treatment on current flow mechanisms in Au-TiBx-Al-Ti-n+-n-n+-GaN-Al2O3 ohmic contacts
AE Belyaev, NS Boltovets, SA Vitusevich, VN Ivanov, RV Konakova, ...
Semiconductors 44 (6), 745-751, 2010
42010
Mechanism of current flow in a Au-Ti-Al-Ti-n+-GaN ohmic contact in the temperature range of 4.2–300 K
AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, LM Kapitanchuk, ...
Semiconductors 48 (10), 1308-1311, 2014
32014
Radiation damage of contact structures with diffusion barriers exposed to irradiation with 60Coγ-ray photons
AE Belyaev, NS Boltovets, RV Konakova, VV Milenin, YN Sveshnikov, ...
Semiconductors 44 (4), 448-456, 2010
32010
Two-step passivation for enhanced InGaN/GaN light emitting diodes with step graded electron injectors
V Sheremet, M Genç, N Gheshlaghi, M Elçi, N Sheremet, A Aydınlı, ...
Superlattices and Microstructures 113, 623-634, 2018
22018
The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range
AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, SA Vitusevich, ...
Technical Physics Letters 42 (6), 649-651, 2016
22016
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