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Ryota Ohtani
Ryota Ohtani
Asahi Diamond Industrial
Подтвержден адрес электронной почты в домене nims.go.jp
Название
Процитировано
Процитировано
Год
Structural and physical characteristics of ultrananocrystalline diamond/hydrogenated amorphous carbon composite films deposited using a coaxial arc plasma gun
T Yoshitake, Y Nakagawa, A Nagano, R Ohtani, H Setoyama, ...
Japanese journal of applied physics 49 (1R), 015503, 2010
572010
Near-edge x-ray absorption fine-structure, x-ray photoemission, and Fourier transform infrared spectroscopies of ultrananocrystalline diamond/hydrogenated amorphous carbon …
T Yoshitake, A Nagano, S Ohmagari, M Itakura, N Kuwano, R Ohtani, ...
Japanese journal of applied physics 48 (2R), 020222, 2009
542009
Formation of p-type semiconducting ultrananocrystalline diamond/hydrogenated amorphous carbon composite films by boron doping
S Ohmagari, T Yoshitake, A Nagano, R Ohtani, H Setoyama, E Kobayashi, ...
Japanese journal of applied physics 49 (3R), 031302, 2010
442010
Near-edge X-ray absorption fine structure of ultrananocrystalline diamond/hydrogenated amorphous carbon films prepared by pulsed laser deposition
S Ohmagari, T Yoshitake, A Nagano, S Al-Riyami, R Ohtani, H Setoyama, ...
Journal of Nanomaterials 2009, 2009
422009
Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond
R Ohtani, T Yamamoto, SD Janssens, S Yamasaki, S Koizumi
Applied Physics Letters 105 (23), 2014
342014
X-ray photoemission spectroscopic study of ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition
S Ohmagari, T Yoshitake, A Nagano, R Ohtani, H Setoyama, E Kobayashi, ...
Diamond and related materials 19 (7-9), 911-913, 2010
252010
Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy
QX Guo, H Senda, K Saito, T Tanaka, M Nishio, J Ding, TX Fan, D Zhang, ...
Applied Physics Letters 98 (18), 2011
182011
Chemical bonding structural analysis of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition
H Gima, A Zkria, Y Katamune, R Ohtani, S Koizumi, T Yoshitake
Applied Physics Express 10 (1), 015801, 2016
172016
Influences of repetition rate of laser pulses on growth of crystalline AlN films on sapphire (0001) substrates by pulsed laser deposition
K Sumitani, R Ohtani, T Yoshida, Y Nakagawa, S Mohri, T Yoshitake
Diamond and related materials 19 (5-6), 618-620, 2010
152010
Toward highly conductive n-type diamond: Incremental phosphorus-donor concentrations assisted by surface migration of admolecules
T Yamamoto, SD Janssens, R Ohtani, D Takeuchi, S Koizumi
Applied Physics Letters 109 (18), 2016
142016
Synchrotron X-ray diffraction study of single-phase β-AlN thin films heteroepitaxially grown on sapphire (0001) substrates by pulsed laser deposition
K Sumitani, R Ohtani, T Yoshida, Y Nakagawa, S Mohri, T Yoshitake
Japanese journal of applied physics 49 (2R), 020212, 2010
92010
SiC/Si-dots multilayer structures formed by supersonic free jets of and
Y Ikoma, R Ohtani, N Matsui, T Motooka
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
72003
New X-ray absorption fine structure measurement system under atmospheric pressure in the soft X-ray region at SAGA Light Source
T Okajima, R Ohtani
Diamond Light Source Proceedings 1 (SRMS-7), e141, 2011
62011
Structural change of micropipes in Al-implanted SiC crystals by post-implantation annealing
K Ishiji, R Ohtani, S Kawado, Y Hirai, S Nagamachi
Semiconductor Science and Technology 26 (2), 025009, 2010
62010
Formation of SiC/Si Multilayer Structures on Si(100) by Supersonic Free Jets of Single Gas Source CH3SiH3
Y Ikoma, R Ohtani, T Motooka
Materials Science Forum 457, 325-328, 2004
52004
Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films
Y Katamune, S Takeichi, R Ohtani, S Koizumi, E Ikenaga, K Kamitani, ...
Applied Physics A 125, 1-6, 2019
42019
X-ray diffraction study of cubic-phase AlN thin films grown on sapphire (0001) substrates by pulsed laser deposition
K Sumitani, R Ohtani, T Yoshida, S Mohri, T Yoshitake
IOP Conference Series: Materials Science and Engineering 24 (1), 012017, 2011
42011
Formation of Si/SiC heterostructures for silicon-based quantum devices using single CH3SiH3-gas source free jet
R Ohtani, Y Ikoma, T Motooka
MRS Online Proceedings Library (OPL) 815, J5. 11, 2004
42004
Ultrananocrystalline diamond/hydrogenated amorphous carbon films prepared by a coaxial arc plasma gun
Y Nakagawa, T Yoshitake, K Hanada, A Nagano, R Ohtani, K Sumitani, ...
Materials Science Forum 638, 2927-2932, 2010
32010
Influences of repetition rate of arc discharges on hardness and modulus of ultrananocrystalline diamond films prepared by coaxial arc plasma deposition
T Yoshida, K Hanada, H Gima, R Ohtani, K Sumitani, H Setoyama, ...
Materials Research Express 2 (1), 015021, 2015
22015
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