Structural and physical characteristics of ultrananocrystalline diamond/hydrogenated amorphous carbon composite films deposited using a coaxial arc plasma gun T Yoshitake, Y Nakagawa, A Nagano, R Ohtani, H Setoyama, ...
Japanese journal of applied physics 49 (1R), 015503, 2010
57 2010 Near-edge x-ray absorption fine-structure, x-ray photoemission, and Fourier transform infrared spectroscopies of ultrananocrystalline diamond/hydrogenated amorphous carbon … T Yoshitake, A Nagano, S Ohmagari, M Itakura, N Kuwano, R Ohtani, ...
Japanese journal of applied physics 48 (2R), 020222, 2009
54 2009 Formation of p-type semiconducting ultrananocrystalline diamond/hydrogenated amorphous carbon composite films by boron doping S Ohmagari, T Yoshitake, A Nagano, R Ohtani, H Setoyama, E Kobayashi, ...
Japanese journal of applied physics 49 (3R), 031302, 2010
44 2010 Near-edge X-ray absorption fine structure of ultrananocrystalline diamond/hydrogenated amorphous carbon films prepared by pulsed laser deposition S Ohmagari, T Yoshitake, A Nagano, S Al-Riyami, R Ohtani, H Setoyama, ...
Journal of Nanomaterials 2009, 2009
42 2009 Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond R Ohtani, T Yamamoto, SD Janssens, S Yamasaki, S Koizumi
Applied Physics Letters 105 (23), 2014
34 2014 X-ray photoemission spectroscopic study of ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by pulsed laser deposition S Ohmagari, T Yoshitake, A Nagano, R Ohtani, H Setoyama, E Kobayashi, ...
Diamond and related materials 19 (7-9), 911-913, 2010
25 2010 Electronic structure of GaInN semiconductors investigated by x-ray absorption spectroscopy QX Guo, H Senda, K Saito, T Tanaka, M Nishio, J Ding, TX Fan, D Zhang, ...
Applied Physics Letters 98 (18), 2011
18 2011 Chemical bonding structural analysis of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition H Gima, A Zkria, Y Katamune, R Ohtani, S Koizumi, T Yoshitake
Applied Physics Express 10 (1), 015801, 2016
17 2016 Influences of repetition rate of laser pulses on growth of crystalline AlN films on sapphire (0001) substrates by pulsed laser deposition K Sumitani, R Ohtani, T Yoshida, Y Nakagawa, S Mohri, T Yoshitake
Diamond and related materials 19 (5-6), 618-620, 2010
15 2010 Toward highly conductive n-type diamond: Incremental phosphorus-donor concentrations assisted by surface migration of admolecules T Yamamoto, SD Janssens, R Ohtani, D Takeuchi, S Koizumi
Applied Physics Letters 109 (18), 2016
14 2016 Synchrotron X-ray diffraction study of single-phase β-AlN thin films heteroepitaxially grown on sapphire (0001) substrates by pulsed laser deposition K Sumitani, R Ohtani, T Yoshida, Y Nakagawa, S Mohri, T Yoshitake
Japanese journal of applied physics 49 (2R), 020212, 2010
9 2010 SiC/Si-dots multilayer structures formed by supersonic free jets of and Y Ikoma, R Ohtani, N Matsui, T Motooka
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
7 2003 New X-ray absorption fine structure measurement system under atmospheric pressure in the soft X-ray region at SAGA Light Source T Okajima, R Ohtani
Diamond Light Source Proceedings 1 (SRMS-7), e141, 2011
6 2011 Structural change of micropipes in Al-implanted SiC crystals by post-implantation annealing K Ishiji, R Ohtani, S Kawado, Y Hirai, S Nagamachi
Semiconductor Science and Technology 26 (2), 025009, 2010
6 2010 Formation of SiC/Si Multilayer Structures on Si(100) by Supersonic Free Jets of Single Gas Source CH3 SiH3 Y Ikoma, R Ohtani, T Motooka
Materials Science Forum 457, 325-328, 2004
5 2004 Electrical properties of boron-incorporated ultrananocrystalline diamond/hydrogenated amorphous carbon composite films Y Katamune, S Takeichi, R Ohtani, S Koizumi, E Ikenaga, K Kamitani, ...
Applied Physics A 125, 1-6, 2019
4 2019 X-ray diffraction study of cubic-phase AlN thin films grown on sapphire (0001) substrates by pulsed laser deposition K Sumitani, R Ohtani, T Yoshida, S Mohri, T Yoshitake
IOP Conference Series: Materials Science and Engineering 24 (1), 012017, 2011
4 2011 Formation of Si/SiC heterostructures for silicon-based quantum devices using single CH3SiH3-gas source free jet R Ohtani, Y Ikoma, T Motooka
MRS Online Proceedings Library (OPL) 815, J5. 11, 2004
4 2004 Ultrananocrystalline diamond/hydrogenated amorphous carbon films prepared by a coaxial arc plasma gun Y Nakagawa, T Yoshitake, K Hanada, A Nagano, R Ohtani, K Sumitani, ...
Materials Science Forum 638, 2927-2932, 2010
3 2010 Influences of repetition rate of arc discharges on hardness and modulus of ultrananocrystalline diamond films prepared by coaxial arc plasma deposition T Yoshida, K Hanada, H Gima, R Ohtani, K Sumitani, H Setoyama, ...
Materials Research Express 2 (1), 015021, 2015
2 2015