| Method for maximizing air gap in back end of the line interconnect through via landing modification BD Briggs, LA Clevenger, CJ Penny, M Rizzolo US Patent 9,837,355, 2017 | 221 | 2017 |
| Self-forming barrier for use in air gap formation BD Briggs, E Huang, T Nogami, CJ Penny US Patent 10,229,851, 2019 | 214 | 2019 |
| Electromechanical robustness of monolayer graphene with extreme bending BD Briggs, B Nagabhirava, G Rao, R Geer, H Gao, Y Xu, B Yu Applied Physics Letters 97 (22), 2010 | 63 | 2010 |
| Bilayer graphene system: Current-induced reliability limit T Yu, EK Lee, B Briggs, B Nagabhirava, B Yu IEEE electron device letters 31 (10), 1155-1157, 2010 | 40 | 2010 |
| Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node BD Briggs, CB Peethala, DL Rath, J Lee, S Nguyen, NV LiCausi, ... 2017 IEEE International Electron Devices Meeting (IEDM), 14.2. 1-14.2. 4, 2017 | 38 | 2017 |
| Bilayer graphene/copper hybrid on-chip interconnect: A reliability study T Yu, EK Lee, B Briggs, B Nagabhirava, B Yu IEEE transactions on nanotechnology 10 (4), 710-714, 2010 | 36 | 2010 |
| Smartwatch blackbox BD Briggs, LA Clevenger, LAH Clevenger, IIJH Connell, NK Ratha, ... US Patent 9,758,095, 2017 | 35 | 2017 |
| Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node T Nogami, X Zhang, J Kelly, B Briggs, H You, R Patlolla, H Huang, ... 2017 Symposium on VLSI Technology, T148-T149, 2017 | 25 | 2017 |
| Through-Cobalt Self Forming Barrier (tCoSFB) for Cu/ULK BEOL: A novel concept for advanced technology nodes T Nogami, BD Briggs, S Korkmaz, M Chae, C Penny, J Li, W Wang, ... 2015 IEEE International Electron Devices Meeting (IEDM), 8.1. 1-8.1. 4, 2015 | 23 | 2015 |
| Influence of copper on the switching properties of hafnium oxide-based resistive memory BD Briggs, SM Bishop, KD Leedy, B Butcher, RL Moore, SW Novak, ... MRS Online Proceedings Library (OPL) 1337, mrss11-1337-q07-03, 2011 | 23 | 2011 |
| Emotional analysis and depiction in virtual reality BD Briggs, LA Clevenger, LAH Clevenger, CJ Penny, M Rizzolo, ... US Patent App. 15/445,335, 2018 | 19 | 2018 |
| Selective and non-selective barrier layer wet removal BD Briggs, EE Huang, RR Patlolla, CB Peethala, DL Rath, H Shobha US Patent 9,685,406, 2017 | 19 | 2017 |
| Ion implantation synthesized copper oxide-based resistive memory devices SM Bishop, H Bakhru, SW Novak, BD Briggs, RJ Matyi, NC Cady Applied Physics Letters 99 (20), 2011 | 19 | 2011 |
| Sentiment analysis of mental health disorder symptoms M Ashoori, BD Briggs, LA Clevenger, LAH Clevenger US Patent 10,580,435, 2020 | 18 | 2020 |
| Influence of the plasma oxidation power on the switching properties of Al/CuxO/Cu memristive devices NR McDonald, SM Bishop, BD Briggs, JE Van Nostrand, NC Cady Solid-State Electronics 78, 46-50, 2012 | 18 | 2012 |
| Structure and method to improve FAV RIE process margin and electromigration BD Briggs, J Lee, TE Standaert US Patent 9,953,865, 2018 | 17 | 2018 |
| Defect detection strategies and process partitioning for SE EUV patterning L Meli, K Petrillo, A De Silva, J Arnold, N Felix, C Robinson, B Briggs, ... Extreme Ultraviolet (EUV) Lithography IX 10583, 87-103, 2018 | 17 | 2018 |
| Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines T Nogami, R Patlolla, J Kelly, B Briggs, H Huang, J Demarest, J Li, ... 2017 IEEE International Interconnect Technology Conference (IITC), 1-3, 2017 | 16 | 2017 |
| Reduced tip-to-tip and via pitch at line end BA Anderson, BD Briggs, TE Standaert US Patent 10,020,223, 2018 | 14 | 2018 |
| Airgap protection layer for via alignment BD Briggs, LA Clevenger, CJ Penny, M Rizzolo US Patent 9,553,019, 2017 | 14 | 2017 |
