Zakhar R. Kudrynskyi
Zakhar R. Kudrynskyi
Research Fellow, School of Physics and Astronomy, University of Nottingham
Підтверджена електронна адреса в nottingham.ac.uk
НазваПосиланняРік
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
DA Bandurin, AV Tyurnina, LY Geliang, A Mishchenko, V Zólyomi, ...
Nature nanotechnology 12 (3), 223, 2017
4332017
Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement
GW Mudd, SA Svatek, T Ren, A Patanè, O Makarovsky, L Eaves, ...
Advanced Materials 25 (40), 5714-5718, 2013
3282013
High broad‐band photoresponsivity of mechanically formed InSe–graphene van der Waals heterostructures
GW Mudd, SA Svatek, L Hague, O Makarovsky, ZR Kudrynskyi, CJ Mellor, ...
Advanced Materials 27 (25), 3760-3766, 2015
1742015
The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals
GW Mudd, MR Molas, X Chen, V Zólyomi, K Nogajewski, ZR Kudrynskyi, ...
Scientific reports 6, 39619, 2016
842016
Quantum confined acceptors and donors in InSe nanosheets
GW Mudd, A Patanè, ZR Kudrynskyi, MW Fay, O Makarovsky, L Eaves, ...
Applied Physics Letters 105 (22), 221909, 2014
462014
Room temperature electroluminescence from mechanically formed van der Waals III–VI homojunctions and heterojunctions
N Balakrishnan, ZR Kudrynskyi, MW Fay, GW Mudd, SA Svatek, ...
Advanced Optical Materials 2 (11), 1064-1069, 2014
402014
Engineering p–n junctions and bandgap tuning of InSe nanolayers by controlled oxidation
N Balakrishnan, ZR Kudrynskyi, EF Smith, MW Fay, O Makarovsky, ...
2D Materials 4 (2), 025043, 2017
372017
Biexciton formation and exciton coherent coupling in layered GaSe
P Dey, J Paul, G Moody, CE Stevens, N Glikin, ZD Kovalyuk, ...
The Journal of chemical physics 142 (21), 212422, 2015
262015
Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport
N Balakrishnan, CR Staddon, EF Smith, J Stec, D Gay, GW Mudd, ...
2D Materials 3 (2), 025030, 2016
252016
Mechanism of excitonic dephasing in layered InSe crystals
P Dey, J Paul, N Glikin, ZD Kovalyuk, ZR Kudrynskyi, AH Romero, ...
Physical Review B 89 (12), 125128, 2014
232014
, L. Eaves, IV Grigorieva, VI Fal’ko, AK Geim and Y. Cao
DA Bandurin, AV Tyurnina, GL Yu, A Mishchenko, V Zólyomi, SV Morozov, ...
Nat. Nanotechnol 12 (3), 223-227, 2017
212017
Gate-defined quantum confinement in InSe-based van der Waals heterostructures
M Hamer, E Tóvári, M Zhu, MD Thompson, A Mayorov, J Prance, Y Lee, ...
Nano letters 18 (6), 3950-3955, 2018
202018
Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe
N Balakrishnan, ED Steer, EF Smith, ZR Kudrynskyi, ZD Kovalyuk, ...
2D Materials 5 (3), 035026, 2018
162018
Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal
ZR Kudrynskyi, MA Bhuiyan, O Makarovsky, JDG Greener, EE Vdovin, ...
Physical review letters 119 (15), 157701, 2017
152017
Magnetic properties and surface morphology of layered In2Se3 crystals intercalated with cobalt
AP Bakhtinov, VB Boledzyuk, ZD Kovalyuk, ZR Kudrynskyi, OS Lytvyn, ...
Physics of the Solid State 55 (6), 1148-1155, 2013
152013
Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire
R Beardsley, AV Akimov, JDG Greener, GW Mudd, S Sandeep, ...
Scientific reports 6, 26970, 2016
122016
Graphene-InSe-graphene van der Waals heterostructures
SA Svatek, GW Mudd, ZR Kudrynskyi, O Makarovsky, ZD Kovalyuk, ...
Journal of Physics: Conference Series 647 (1), 012001, 2015
122015
Morphology of nanostructures formed on the van der Waals surface of GaSe layered crystals annealed in sulfur vapor
AP Bakhtinov, ZR Kudrynskyi, OS Litvin
Physics of the Solid State 53 (10), 2154, 2011
102011
Fabrication and characterization of photosensitive n-CdO/p-InSe heterojunctions
ZR Kudrynskyi, ZD Kovalyuk, VM Katerynchuk, VV Khomyak, IG Orletsky, ...
Acta Phys. Pol. A 124, 720, 2013
92013
Highly-mismatched InAs/InSe heterojunction diodes
AV Velichko, ZR Kudrynskyi, DM Di Paola, O Makarovsky, M Kesaria, ...
Applied Physics Letters 109 (18), 182115, 2016
82016
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