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O.S. Pylypchuk
O.S. Pylypchuk
Senior Research Fellow, Institute of Physics, National academy of sciences of Ukraine
Verified email at iop.kiev.ua
Title
Cited by
Cited by
Year
Electron mobility in the GaAs/InGaAs/GaAs quantum wells
VV Vainberg, AS Pylypchuk, NV Baidus, BN Zvonkov
Semiconductor Physics Quantum Electronics & Optoelectronics, 2013
212013
Lateral transport and far-infrared radiation of electrons in In x Ga1 − x As/GaAs heterostructures with the double tunnel-coupled …
NV Baidus, PA Belevskii, AA Biriukov, VV Vainberg, MN Vinoslavskii, ...
Semiconductors 44, 1495-1498, 2010
122010
Transport properties of InGaAs/GaAs Heterostructures with δ-doped quantum wells
NV Baidus, VV Vainberg, BN Zvonkov, AS Pylypchuk, VN Poroshin, ...
Semiconductors 46, 631-636, 2012
102012
A peculiarity of quantum hot-electron real space transfer in dual-channel GaAs-based heterostructures
VV Vainberg, OG Sarbey, AS Pylypchuk, VN Poroshin, NV Baidus
Journal of Physics Communications 1 (4), 045002, 2017
62017
The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range
AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, SA Vitusevich, ...
Technical Physics Letters 42, 649-651, 2016
52016
Influence of conduction via a channel of an impurity δ-layer on the magneto-quantum effects in AlGaAs/GaAs/AlGaAs heterostructures
VV Vainberg, AS Pylypchuk, VN Poroshin, OG Sarbey, NV Baidus, ...
Physica E: Low-dimensional Systems and Nanostructures 60, 31-36, 2014
52014
Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
MM Vinoslavskii, PA Belevskii, VM Poroshin, OS Pilipchuk, VO Kochelap
Semiconductor physics, quantum electronics & optoelectronics, 256-262, 2018
32018
Mechanism of current flow in a Au-Ti-Al-Ti-n +-GaN ohmic contact in the temperature range of 4.2–300 K
AV Sachenko, AE Belyaev, NS Boltovets, RV Konakova, LM Kapitanchuk, ...
Semiconductors 48, 1308-1311, 2014
32014
Size-induced high electrocaloric response of dense ferroelectric nanocomposites
AN Morozovska, OS Pylypchuk, S Ivanchenko, EA Eliseev, ...
Ceramics International, 2024
22024
Electric transport properties in the 2D-MoS2
VV Vainberg, OS Pylypchuk, VN Poroshin, MV Olenchuk, GI Dovbeshko
Molecular Crystals and Liquid Crystals 749 (1), 87-92, 2022
22022
Effects of the real-space transfer of charge carriers in the n-AlGaAs/GaAs heterostructures with the delta-layers of impurity in the barriers
VV Vainberg, AS Pylypchuk, VN Poroshin, OG Sarbey
Український фізичний журнал, 721-725, 2014
22014
Transient processes in electric transport in the powder MoS2 samples
VV Vainberg, OS Pylypchuk, VN Poroshin, MV Olenchuk, GI Dovbeshko, ...
Journal of Applied Physics 131 (23), 2022
12022
Resistive switching effect in the n-InGaAs/GaAs heterostructures with double tunnel-coupled quantum wells
PA Belevskii, MN Vinoslavskii, VV Vainberg, OS Pylypchuk, VN Poroshin
Low Temperature Physics 48 (2), 157-160, 2022
12022
Low temperature charge transport in arrays of single-walled carbon nanotube bundles with radiation induced defects
VV Vainberg, VN Poroshin, OS Pylypchuk, NA Tripachko, II Yaskovets
Semiconductor physics, quantum electronics & optoelectronics, 418-423, 2019
12019
The effect of structure on the low-temperature electrical conductivity of carbon nanocomposite temperature sensors
VV Vainberg, AS Pylypchuk, VN Poroshin, YN Gudenko, AS Nikolenko
Low Temperature Physics 45 (10), 1104-1108, 2019
12019
Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+n-Si Diffusion Silicon Structures
AE Belyaev, NS Boltovets, VP Klad’ko, NV Safryuk-Romanenko, ...
Semiconductors 53, 469-476, 2019
12019
Влияние структуры на низкотемпературную электрическую проводимость углеродных нанокомпозитных температурных сенсоров
VV Vainberg, AS Pylypchuk, VN Poroshin, YN Gudenko, AS Nikolenko
Физика низких темпеpатуp 45 (10), 1294-1299, 2019
12019
Magnetoresistance of composite carbon sensors in strong electric fields in the liquid helium temperature range
VNPYPF V.V. Vainberg, A.S. Pylypchuk
Low Temperature Physics 43 (Issue 3), 367-370, 2017
12017
Lateral ambipolar drift of the excess charge carriers in the GaAs-based heterostructures with quantum wells and impurity δ-layers in the adjacent barriers
VV Vainberg, OS Pylypchuk, VN Poroshin, PA Belevski, MN Vinoslavski
Physica E: Low-dimensional Systems and Nanostructures 159, 115906, 2024
2024
Effective Dielectric Response of Dense Ferroelectric Nanocomposites
O Pylypchuk, S Ivanchenko, Y Zagorodniy, O Leschenko, V Poroshin, ...
arXiv preprint arXiv:2401.07311, 2024
2024
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