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Alexander Stronski
Alexander Stronski
Head of department, Institute of Semiconductor Physics NAS Ukraine
Verified email at isp.kiev.ua
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Year
Holographic optical element fabrication using chalcogenide layers
I.Z.Indutnyi, A.V.Stronski, S.A.Kostyukevich, P.F.Romanenko, P.E Shepeliavi
Optical Engineering 34 (4), 1030-1039, 1995
1021995
Modulated-temperature differential scanning calorimetry and Raman spectroscopy studies of AsxS100− x glasses
T Wagner, SO Kasap, M Vlcek, A Sklenar, A Stronski
Journal of materials science 33 (23), 5581-5588, 1998
651998
Photosensitive properties of chalcogenide vitreous semiconductors in diffractive and holographic technologies applications
AV Stronski, M Vl
542002
Structure and imaging properties of As40S60− xSex glasses
M Vlček, AV Stronski, A Sklenař, T Wagner, SO Kasap
Journal of Non-Crystalline Solids 266, 964-968, 2000
502000
The structure of AsxS100− x glasses studied by temperature-modulated differential scanning calorimetry and Raman spectroscopy
T Wagner, SO Kasap, M Vlček, A Sklenař, A Stronski
Journal of non-crystalline solids 227, 752-756, 1998
431998
Comparison of structural transforma‐tions in bulk and as‐evaporated optical media under action of polychromatic or photon‐energy dependent monochromatic illumination
R Holomb, V Mitsa, O Petrachenkov, M Veres, A Stronski, M Vlček
physica status solidi (c) 8 (9), 2705-2708, 2011
412011
Photostimulated processes in chalcogenide glassy semiconductors and their practical application
EF Venger, AV Melnichuk, AV Stronski
Akademperiodika, Kiev, 2007
402007
Direct surface relief formation on As2S3–Se nanomultilayers in dependence on polarization states of recording beams
E Achimova, A Stronski, V Abaskin, A Meshalkin, A Paiuk, A Prisacar, ...
Optical Materials 47, 566-572, 2015
392015
Raman spectra of Ag-and Cu-photo-doped As40S60− xSex films
AV Stronski, M Vlček, AI Stetsun, A Sklenař, PE Shepeliavyi
Journal of non-crystalline solids 270 (1-3), 129-136, 2000
362000
Application of As40S60− xSex layers for high-efficiency grating production
AV Stronski, M Vlček, A Sklenar, PE Shepeljavi, SA Kostyukevich, ...
Journal of non-crystalline solids 266, 973-978, 2000
342000
Thermal relaxation of the structural and optical properties of amorphous As40S60− xSex films
JM Gonzalez-Leal, M Vlček, R Prieto-Alcon, A Stronski, T Wagner, ...
Journal of non-crystalline solids 326, 146-153, 2003
332003
Effect of doping by transitional elements on properties of chalcogenide glasses
A Stronski, O Paiuk, A Gudymenko, V Klad’Ko, P Oleksenko, N Vuichyk, ...
Ceramics International 41 (6), 7543-7548, 2015
322015
Holographic and e-beam image recording in Ge5As37S58–Se nanomultilayer structures
A Stronski, E Achimova, O Paiuk, A Meshalkin, V Abashkin, O Lytvyn, ...
Nanoscale Research Letters 11 (1), 1-7, 2016
312016
Surface relief formation in Ge5As37S58–Se nanomultilayers
A Stronski, E Achimova, A Paiuk, V Abaskin, A Meshalkin, A Prisacar, ...
Journal of Non-Crystalline Solids 409, 43-48, 2015
312015
Optical characterization of thermally evaporated thin films of As40S40Se20 chalcogenide glass by reflectance measurements
E Marquez, JM González-Leal, R Prieto-Alcón, M Vlcek, A Stronski, ...
Applied Physics A 67 (3), 371-378, 1998
311998
Compositional dependencies in the vibrational properties of amorphous Ge-As-Se and Ge-Sb-Te chalcogenide alloys studied by Raman spectroscopy
K Shportko, L Revutska, O Paiuk, J Baran, A Stronski, A Gubanova, ...
Optical Materials 73, 489-496, 2017
272017
Ellipsometry and AFM study of post-deposition transformations in vacuum-evaporated As–S–Se films
MV Sopinskyy, PE Shepeliavyi, AV Stronski, EF Venger
J. Optoelectron. Adv. Mater 7 (5), 2255-2266, 2005
272005
Direct magnetic relief recording using As40S60: Mn–Se nanocomposite multilayer structures
A Stronski, E Achimova, O Paiuk, A Meshalkin, A Prisacar, G Triduh, ...
Nanoscale Research Letters 12 (1), 1-7, 2017
252017
Imaging properties of As40S40Se20 layers
AV Stronski, M Vlček
Opto-Electronics Review 8 (3), 263-267, 2000
252000
Imaging properties of As40S40Se20 layers
AV Stronski, M Vlček
Opto-Electronics Review 8 (3), 263-267, 2000
252000
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