Larysa Khomenkova
Larysa Khomenkova
V. Lashkaryov Institute of semiconductor physics of NASU
Verified email at isp.kiev.ua - Homepage
Title
Cited by
Cited by
Year
The influence of defect drift in external electric field on green luminescence of ZnO single crystals
NO Korsunska, LV Borkovska, BM Bulakh, LY Khomenkova, ...
Journal of luminescence 102, 733-736, 2003
1622003
Nature of visible luminescence and its excitation in SiSiOx systems
L Khomenkova, N Korsunska, V Yukhimchuk, B Jumayev, T Torchynska, ...
Journal of luminescence 102, 705-711, 2003
592003
The role of oxidation on porous silicon photoluminescence and its excitation
TV Torchinskaya, NE Korsunskaya, LY Khomenkova, BR Dhumaev, ...
Thin Solid Films 381 (1), 88-93, 2001
532001
Thermal stability of high-k Si-rich HfO2 layers grown by RF magnetron sputtering
L Khomenkova, X Portier, J Cardin, F Gourbilleau
Nanotechnology 21 (28), 285707, 2010
452010
Ballistic effect in red photoluminescence of Si wires
TV Torchynska, MM Rodriguez, FGB Espinoza, LY Khomenkova, ...
Physical Review B 65 (11), 115313, 2002
442002
Three approaches to surface substance role investigation in porous silicon photoluminescence and its excitation
TV Torchynska, NE Korsunska, BR Dzhumaev, LY Khomenkova
Journal of Physics and Chemistry of Solids 61 (6), 937-941, 2000
422000
Nanoscale evidence of erbium clustering in Er-doped silicon-rich silica
E Talbot, R Lardé, P Pareige, L Khomenkova, K Hijazi, F Gourbilleau
Nanoscale research letters 8 (1), 39, 2013
382013
Defect-related luminescence of Si/SiO2 layers
L Khomenkova, N Korsunska, T Torchynska, V Yukhimchuk, B Jumayev, ...
Journal of Physics: Condensed Matter 14 (48), 13217, 2002
382002
Hf-based high-k materials for Si nanocrystal floating gate memories
L Khomenkova, BS Sahu, A Slaoui, F Gourbilleau
Nanoscale research letters 6 (1), 172, 2011
342011
Towards an optimum coupling between Er ions and Si-based sensitizers for integrated active photonics
K Hijazi, R Rizk, J Cardin, L Khomenkova, F Gourbilleau
Journal of Applied Physics 106 (2), 024311, 2009
332009
Hot carriers and excitation of Si/SiOx interface defect photoluminescence in Si nanocrystallites
TV Torchynska, AD Cano, MM Rodriguez, LY Khomenkova
Physica B: Condensed Matter 340, 1113-1118, 2003
332003
Complex nature of the red photoluminescence band and peculiarities of its excitation in porous silicon
TV Torchynska, JP Gomez, GP Polupan, FGB Espinoza, AG Borquez, ...
Applied surface science 167 (3-4), 197-204, 2000
332000
High-k Hf-based layers grown by RF magnetron sputtering
L Khomenkova, C Dufour, PE Coulon, C Bonafos, F Gourbilleau
Nanotechnology 21 (9), 095704, 2010
322010
ZnO nanostructured microspheres and elongated structures grown by thermal treatment of ZnS powder
L Khomenkova, P Fernández, J Piqueras
Crystal growth & design 7 (4), 836-839, 2007
292007
Radiative channel competition in silicon nanocrystallites
L Khomenkova, N Korsunska, M Sheinkman, T Stara, TV Torchynska, ...
Journal of luminescence 115 (3-4), 117-121, 2005
292005
Optically active ions in codoped with Si nanoclusters
D Navarro-Urrios, Y Lebour, O Jambois, B Garrido, A Pitanti, N Daldosso, ...
Journal of Applied Physics 106 (9), 093107, 2009
272009
Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties
TV Torchynska, JLC Espinola, EV Hernandez, L Khomenkova, F Delachat, ...
Thin Solid Films 581, 65-69, 2015
242015
Efficient energy transfer from Si-nanoclusters to Er ions in silica induced by substrate heating during deposition
S Cueff, C Labbé, J Cardin, JL Doualan, L Khomenkova, K Hijazi, ...
Journal of Applied Physics 108 (6), 064302, 2010
222010
The influence of crystal imperfections on the shape of exciton emission spectrum in ZnO single crystals
B Bulakh, L Khomenkova, V Kushnirenko, I Markevich
The European Physical Journal Applied Physics 27 (1-3), 305-307, 2004
222004
SiO x/SiN y multilayers for photovoltaic and photonic applications
RP Nalini, L Khomenkova, O Debieu, J Cardin, C Dufour, M Carrada, ...
Nanoscale research letters 7 (1), 1-6, 2012
202012
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