Кафедра електроніки і енергетики, Department of Electronics and Energy Engineering
Кафедра електроніки і енергетики, Department of Electronics and Energy Engineering
Yuriy Fedkovych Chernivtsi National University, Chernivtsi National University
Підтверджена електронна адреса в chnu.edu.ua - Домашня сторінка
НазваПосиланняРік
Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement
GW Mudd, SA Svatek, T Ren, A Patanè, O Makarovsky, L Eaves, ...
Advanced Materials 25 (40), 5714-5718, 2013
2502013
Photovoltaic solar cells performance at elevated temperatures
D Meneses-Rodrı́guez, PP Horley, J Gonzalez-Hernandez, YV Vorobiev, ...
Solar energy 78 (2), 243-250, 2005
1602005
Surface plasmon resonance interferometry for micro-array biosensing
PI Nikitin, AN Grigorenko, AA Beloglazov, MV Valeiko, AI Savchuk, ...
Sensors and Actuators A: Physical 85 (1-3), 189-193, 2000
1582000
Surface plasmon resonance interferometry for micro-array biosensing
PI Nikitin, AN Grigorenko, AA Beloglazov, MV Valeiko, AI Savchuk, ...
Sensors and Actuators A: Physical 85 (1-3), 189-193, 2000
1582000
High broad‐band photoresponsivity of mechanically formed InSe–graphene van der Waals heterostructures
GW Mudd, SA Svatek, L Hague, O Makarovsky, ZR Kudrynskyi, CJ Mellor, ...
Advanced Materials 27 (25), 3760-3766, 2015
1332015
IV group dopant compensation effect in CdTe
O Panchuk, A Savitskiy, P Fochuk, Y Nykonyuk, O Parfenyuk, ...
Journal of crystal growth 197 (3), 607-611, 1999
741999
The Faraday effect in semimagnetic semiconductors
PI Nikitin, AI Savchuk
Soviet Physics Uspekhi 33 (11), 974, 1990
671990
The Faraday effect in semimagnetic semiconductors
PI Nikitin, AI Savchuk
Soviet Physics Uspekhi 33 (11), 974, 1990
671990
Electrical and photoelectrical properties of photosensitive heterojunctions n-TiO2/p-CdTe
VV Brus, MI Ilashchuk, ZD Kovalyuk, PD Maryanchuk, KS Ulyanytsky
Semiconductor Science and Technology 26 (12), 125006, 2011
642011
Dependence of efficiency of thin-film CdS/CdTe solar cell on parameters of absorber layer and barrier structure
LA Kosyachenko, AI Savchuk, EV Grushko
Thin Solid Films 517 (7), 2386-2391, 2009
632009
SnO2 films: formation, electrical and optical properties
PM Gorley, VV Khomyak, SV Bilichuk, IG Orletsky, PP Horley, VO Grechko
Materials Science and Engineering: B 118 (1-3), 160-163, 2005
602005
Electronic band structure of GaSe(0001):  Angle-resolved photoemission and ab initio theory
L Plucinski, RL Johnson, BJ Kowalski, K Kopalko, BA Orlowski, ...
Physical Review B 68 (12), 125304, 2003
582003
Физические основы полупроводникового материаловедения
КД Товстюк
Наук. думка, 1986
511986
On some physical properties of InSe and GaSe semiconducting crystals intercalated by ferroelectrics
II Grigorchak, VV Netyaga, ZD Kovalyuk
Journal of Physics: Condensed Matter 9 (12), L191, 1997
491997
Узкозонные полупроводники: получение и физические свойства
НП Гавалешко, ПН Горлей, ВА Шендеровский
Наукова думка, 1984
491984
Intrinsic conductive oxide–p-InSe solar cells
ZD Kovalyuk, VM Katerynchuk, AI Savchuk, OM Sydor
Materials Science and Engineering: B 109 (1-3), 252-255, 2004
482004
Quantum confined acceptors and donors in InSe nanosheets
GW Mudd, A Patanè, ZR Kudrynskyi, MW Fay, O Makarovsky, L Eaves, ...
Applied Physics Letters 105 (22), 221909, 2014
412014
Electrical and optical properties of TiN thin films
MN Solovan, VV Brus, EV Maistruk, PD Maryanchuk
Inorganic Materials 50 (1), 40-45, 2014
402014
On quantum efficiency of nonideal solar cells
VV Brus
Solar Energy 86 (2), 786-791, 2012
402012
Electrolytic double layer capacitor
II Grigortchak, KD Tovstjuk, ZD Kovalyuk, ID Kozmik, BP Bahmatyuk
US Patent 5,351,164, 1994
391994
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