| Electron mobility in the GaAs/InGaAs/GaAs quantum wells VV Vainberg, AS Pylypchuk, NV Baidus, BN Zvonkov Semiconductor Physics Quantum Electronics & Optoelectronics, 2013 | 21 | 2013 |
| Lateral transport and far-infrared radiation of electrons in In x Ga1 − x As/GaAs heterostructures with the double tunnel-coupled … NV Baidus, PA Belevskii, AA Biriukov, VV Vainberg, MN Vinoslavskii, ... Semiconductors 44, 1495-1498, 2010 | 12 | 2010 |
| Transport properties of InGaAs/GaAs Heterostructures with δ-doped quantum wells NV Baidus, VV Vainberg, BN Zvonkov, AS Pylypchuk, VN Poroshin, ... Semiconductors 46, 631-636, 2012 | 10 | 2012 |
| Magnetoresistance of TVO temperature sensor at T< 1 K YP Filippov, GG Ihas, VV Vainberg Review of Scientific Instruments 80 (9), 2009 | 10 | 2009 |
| Application of semiconductor whisker crystals in low temperature electronics RI Baitsar, VV Vainberg, SS Varshava Le Journal de Physique IV 6 (C3), C3-429-C3-434, 1996 | 10 | 1996 |
| Real-space transfer and far-infrared emission of hot electrons in InGaAs/GaAs heterostructures with tunnel-coupled quantum wells PA Belevskii, VV Vainberg, MN Vinoslavskii, AV Kravchenko, ... Ukrayins' kij Fyizichnij Zhurnal (Kyiv) 54, 2009 | 8 | 2009 |
| A peculiarity of quantum hot-electron real space transfer in dual-channel GaAs-based heterostructures VV Vainberg, OG Sarbey, AS Pylypchuk, VN Poroshin, NV Baidus Journal of Physics Communications 1 (4), 045002, 2017 | 6 | 2017 |
| Low-temperature sensors based on telluride microcrystals SS Varshava, LN Pelekh, VV Vainberg Sensors and Actuators A: Physical 30 (1-2), 55-58, 1992 | 6 | 1992 |
| Influence of conduction via a channel of an impurity δ-layer on the magneto-quantum effects in AlGaAs/GaAs/AlGaAs heterostructures VV Vainberg, AS Pylypchuk, VN Poroshin, OG Sarbey, NV Baidus, ... Physica E: Low-dimensional Systems and Nanostructures 60, 31-36, 2014 | 5 | 2014 |
| The transient exclusion effect in intrinsic semiconductors VK Malyutenko, VV Vainberg, GI Teslenko, OY Malyutenko, J Pultorak Semiconductor science and technology 17 (10), 1058, 2002 | 5 | 2002 |
| Thermometric characteristics of carbon fibres VV Vainberg, FM Vorobkalo, LI Zarubin, LN Ganyuk, NT Dekhtyaruk, ... Sensors and Actuators A: Physical 39 (3), 237-240, 1993 | 5 | 1993 |
| Effect of barrier width between GaAs/InGaAs/GaAs double coupled quantum wells on bipolar transport and terahertz radiation by hot carriers in lateral electric field MN Vinoslavskii, PA Belevskii, VN Poroshin, VV Vainberg, NV Baidus Low Temperature Physics 46 (6), 633-638, 2020 | 4 | 2020 |
| Current oscillation and high-field domains in the InGaAs/GaAs heterostructures with a δ-doped quantum well VV Vainberg, YN Gudenko, PA Belevskii, MN Vinoslavskii, VN Poroshin, ... Nanosyst., Nanomater., Nanotechnol. 4, 41-50, 2006 | 4 | 2006 |
| Influence of resonance neutrons on the characteristics of transmutation-doped germanium AG Beda, FM Vorobkalo, VV Vainberg, LI Zarubin, IM Lazebnik, ... Soviet Physics-Semiconductors (English Translation) 22 (11), 1308-1310, 1988 | 4 | 1988 |
| Long-term photoconductivity decay in n-InGaAs/GaAs heterostructures with coupled quantum wells under band-to-band excitation VV Vainberg, VM Vasetskii, YN Gudenko, VN Poroshin, NV Baidus, ... Semiconductors 47, 174-177, 2013 | 3 | 2013 |
| Negative contrast IR emitting device based on the carrier contact exclusion VK Malyutenko, VV Vainberg, GI Teslenko, OY Malyutenko, J Pultorak Semiconductor science and technology 18 (7), 697, 2003 | 3 | 2003 |
| Влияние резонансных нейтронов на характеристики трансмутационно легированного германия АГ Беда, ФМ Воробкало, ВВ Вайнберг, ЛИ Зарубин, ИМ Лазебник, ... Физика и техника полупроводников 22 (11), 2065-2068, 1988 | 3 | 1988 |
| Size-induced high electrocaloric response of dense ferroelectric nanocomposites AN Morozovska, OS Pylypchuk, S Ivanchenko, EA Eliseev, ... Ceramics International, 2024 | 2 | 2024 |
| Electric transport properties in the 2D-MoS2 VV Vainberg, OS Pylypchuk, VN Poroshin, MV Olenchuk, GI Dovbeshko Molecular Crystals and Liquid Crystals 749 (1), 87-92, 2022 | 2 | 2022 |
| Effects of the real-space transfer of charge carriers in the n-AlGaAs/GaAs heterostructures with the delta-layers of impurity in the barriers VV Vainberg, AS Pylypchuk, VN Poroshin, OG Sarbey Український фізичний журнал, 721-725, 2014 | 2 | 2014 |
O.S. PylypchukSenior Research Fellow, Institute of Physics, National academy of sciences of UkraineVerified email at iop.kiev.ua
