Vasyl P. Kladko, V.P. Klad'ko, V. Kladko, V.P. Kladko, Vasyl Kladko, В.П. Кладько
Vasyl P. Kladko, V.P. Klad'ko, V. Kladko, V.P. Kladko, Vasyl Kladko, В.П. Кладько
Corresponding Member of NAS of Ukraine, Professor, Institute of Semiconductors Physics NAS of
Підтверджена електронна адреса в isp.kiev.ua - Домашня сторінка
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Low-temperature method for thermochromic high ordered VO2 phase formation
V Melnik, I Khatsevych, V Kladko, A Kuchuk, V Nikirin, B Romanyuk
Materials Letters 68, 215-217, 2012
592012
Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
V Kladko, A Kuchuk, P Lytvyn, O Yefanov, N Safriuk, A Belyaev, YI Mazur, ...
Nanoscale research letters 7 (1), 289, 2012
382012
Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate
VP Kladko, AF Kolomys, MV Slobodian, VV Strelchuk, VG Raycheva, ...
Journal of applied physics 105 (6), 063515, 2009
372009
Long-term stability of Ni–silicide ohmic contact to n-type 4H–SiC
AV Kuchuk, M Guziewicz, R Ratajczak, M Wzorek, VP Kladko, ...
Microelectronic Engineering 85 (10), 2142-2145, 2008
352008
Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride
AE Belyaev, NS Boltovets, VN Ivanov, VP Kladko, RV Konakova, ...
Semiconductors 42 (6), 689-693, 2008
34*2008
Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H silicon carbide
A Kuchuk, V Kladko, M Guziewicz, A Piotrowska, R Minikayev, A Stonert, ...
Journal of Physics: Conference Series 100 (4), 042003, 2008
342008
Sensitivity of triple‐crystal X‐ray diffractometers to microdefects in silicon
VB Molodkin, SI Olikhovskii, EG Len, EN Kislovskii, VP Kladko, ...
physica status solidi (a) 206 (8), 1761-1765, 2009
31*2009
Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability
A.V. Kuchuk, P. Borowicz, M. Wzorek, M. Borysiewicz, R. Ratajczak, K ...
Advances in Condensed Matter Physics 2016 (Article ID 9273702), 26 pages, 2016
302016
Enhanced relaxation of SiGe layers by He implantation supported by in situ ultrasonic treatments
B Romanjuk, V Kladko, V Melnik, V Popov, V Yukhymchuk, A Gudymenko, ...
Materials science in semiconductor processing 8 (1-3), 171-175, 2005
30*2005
Investigation of indium distribution in InGaAs∕ GaAs quantum dot stacks using high-resolution x-ray diffraction and Raman scattering
YI Mazur, ZM Wang, GJ Salamo, VV Strelchuk, VP Kladko, VF Machulin, ...
Journal of Applied Physics 99 (2), 023517, 2006
29*2006
Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes
AE Belyaev, VV Basanets, NS Boltovets, AV Zorenko, LM Kapitanchuk, ...
Semiconductors 45 (2), 253-259, 2011
28*2011
Effect Of Doping By Transitional Elements On Properties Of Chalcogenide Glasses
A. Stronski, O. Paiuk, A. Gudymenko, V. Kladko, P. Oleksenko, N. Vuichyk, M ...
Ceramics International 41 (6), 7543–7548, 2015
272015
Optical characterization of the AgInS2 nanocrystals synthesized in aqueous media under stoichiometric conditions
L Borkovska, А Romanyuk, V Strelchuk, Y Polishchuk, V Kladko, ...
Materials Science in Semiconductor Processing 37 (9), 135-142, 2015
25*2015
Дифрактометрия наноразмерных дефектов и гетерослоев кристаллов
ВБ Молодкин, АИ Низкова, АП Шпак, ВФ Мачулин, ВП Клочков, ...
Академпериодика, 2005
25*2005
Calculation of two-dimensional maps of diffuse scattering by a real crystal with microdefects and comparison of results obtained from three-crystal diffractometry
VP Kladko, LI Datsenko, J Bak-Misiuk, SI Olikhovskii, VF Machulin, ...
Journal of Physics D: Applied Physics 34 (10A), A87, 2001
24*2001
X-ray diffraction investigation of GaN layers on Si (111) and Al2O3 (0001) substrates
NV Safriuk, GV Stanchu, AV Kuchuk, VP Kladko, AE Belyaev, ...
Semiconductor physics quantum electronics & optoelectronics 16 (3), 265-272, 2013
232013
Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire
VP Kladko, SV Chornen’kii, AV Naumov, AV Komarov, M Tasapo, ...
Semiconductors 40 (9), 1060-1065, 2006
23*2006
On the effect of a dopant on the formation of disordered regions in GaAs under irradiation with fast neutrons
VP Klad’ko, SV Plyatsko
Semiconductors 32 (3), 235-237, 1998
23*1998
Thermal degradation of Au/Ni2Si/n-SiC ohmic contacts under different conditions
AV Kuchuk, M Guziewicz, R Ratajczak, M Wzorek, VP Kladko, ...
Materials Science and Engineering: B 165 (1), 38-41, 2009
222009
On the Formation of Ni-based Ohmic Contacts to n-type 4H-SiC
AV Kuchuk, VP Kladko, A Piotrowska, R Ratajczak, R Jakieła
Materials Science Forum 615, 573-576, 2009
22*2009
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