Vasyl P. Kladko, V.P. Klad'ko, V. Kladko, V.P. Kladko, В.П. Кладько
Vasyl P. Kladko, V.P. Klad'ko, V. Kladko, V.P. Kladko, В.П. Кладько
Corresponding Member of NAS of Ukraine, Professor, Institute of Semiconductors Physics NAS of
Підтверджена електронна адреса в isp.kiev.ua - Домашня сторінка
НазваПосиланняРік
Low-temperature method for thermochromic high ordered VO2 phase formation
V Melnik, I Khatsevych, V Kladko, A Kuchuk, V Nikirin, B Romanyuk
Materials Letters 68, 215-217, 2012
552012
Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
V Kladko, A Kuchuk, P Lytvyn, O Yefanov, N Safriuk, A Belyaev, YI Mazur, ...
Nanoscale research letters 7 (1), 289, 2012
352012
Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H silicon carbide
A Kuchuk, V Kladko, M Guziewicz, A Piotrowska, R Minikayev, A Stonert, ...
Journal of Physics: Conference Series 100 (4), 042003, 2008
352008
Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate
VP Kladko, AF Kolomys, MV Slobodian, VV Strelchuk, VG Raycheva, ...
Journal of applied physics 105 (6), 063515, 2009
342009
Long-term stability of Ni–silicide ohmic contact to n-type 4H–SiC
AV Kuchuk, M Guziewicz, R Ratajczak, M Wzorek, VP Kladko, ...
Microelectronic Engineering 85 (10), 2142-2145, 2008
322008
Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride
AE Belyaev, NS Boltovets, VN Ivanov, VP Kladko, RV Konakova, ...
Semiconductors 42 (6), 689-693, 2008
31*2008
Enhanced relaxation of SiGe layers by He implantation supported by in situ ultrasonic treatments
B Romanjuk, V Kladko, V Melnik, V Popov, V Yukhymchuk, A Gudymenko, ...
Materials science in semiconductor processing 8 (1-3), 171-175, 2005
30*2005
Investigation of indium distribution in InGaAs∕ GaAs quantum dot stacks using high-resolution x-ray diffraction and Raman scattering
YI Mazur, ZM Wang, GJ Salamo, VV Strelchuk, VP Kladko, VF Machulin, ...
Journal of Applied Physics 99 (2), 023517, 2006
26*2006
Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes
AE Belyaev, VV Basanets, NS Boltovets, AV Zorenko, LM Kapitanchuk, ...
Semiconductors 45 (2), 253-259, 2011
25*2011
Дифрактометрия наноразмерных дефектов и гетерослоев кристаллов
ВБ Молодкин, АИ Низкова, АП Шпак, ВФ Мачулин, ВП Кладько, ...
Киев: Академпериодика, 2005
25*2005
Effect Of Doping By Transitional Elements On Properties Of Chalcogenide Glasses
A. Stronski, O. Paiuk, A. Gudymenko, V. Kladko, P. Oleksenko, N. Vuichyk, M ...
Ceramics International 41 (6), 7543–7548, 2015
232015
Sensitivity of triple‐crystal X‐ray diffractometers to microdefects in silicon
VB Molodkin, SI Olikhovskii, EG Len, EN Kislovskii, VP Kladko, ...
physica status solidi (a) 206 (8), 1761-1765, 2009
23*2009
Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire
VP Kladko, SV Chornen’kii, AV Naumov, AV Komarov, M Tasapo, ...
Semiconductors 40 (9), 1060-1065, 2006
23*2006
Calculation of two-dimensional maps of diffuse scattering by a real crystal with microdefects and comparison of results obtained from three-crystal diffractometry
VP Kladko, LI Datsenko, J Bak-Misiuk, SI Olikhovskii, VF Machulin, ...
Journal of Physics D: Applied Physics 34 (10A), A87, 2001
23*2001
Thermal degradation of Au/Ni2Si/n-SiC ohmic contacts under different conditions
AV Kuchuk, M Guziewicz, R Ratajczak, M Wzorek, VP Kladko, ...
Materials Science and Engineering: B 165 (1), 38-41, 2009
222009
Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures
VP Kladko, AV Kuchuk, NV Safryuk, VF Machulin, AE Belyaev, ...
Applied Physics Letters 95 (3), 031907(3), 2009
212009
Ni-Based Ohmic Contacts to n-Type 4H-SiC: The Formation Mechanism and Thermal Stability
A.V. Kuchuk, P. Borowicz, M. Wzorek, M. Borysiewicz, R. Ratajczak, K ...
Advances in Condensed Matter Physics 2016 (Article ID 9273702), 26 pages, 2016
202016
Optical characterization of the AgInS2 nanocrystals synthesized in aqueous media under stoichiometric conditions
L Borkovska, А Romanyuk, V Strelchuk, Y Polishchuk, V Kladko, ...
Materials Science in Semiconductor Processing 37 (9), 135-142, 2015
20*2015
On the Formation of Ni-based Ohmic Contacts to n-type 4H-SiC
AV Kuchuk, VP Kladko, A Piotrowska, R Ratajczak, R Jakieła
Materials Science Forum 615, 573-576, 2009
20*2009
On the effect of a dopant on the formation of disordered regions in GaAs under irradiation with fast neutrons
VP Klad’ko, SV Plyatsko
Semiconductors 32 (3), 235-237, 1998
20*1998
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