J. Gyulai
J. Gyulai
Res. Inst. Tech. Phys. and Matl. Sci., Hung. Acad. Sci.
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Год
Ion‐induced amorphous and crystalline phase formation in Al/Ni, Al/Pd, and Al/Pt thin films
LS Hung, M Nastasi, J Gyulai, JW Mayer
Applied Physics Letters 42 (8), 672-674, 1983
2161983
Ion‐induced amorphous and crystalline phase formation in Al/Ni, Al/Pd, and Al/Pt thin films
LS Hung, M Nastasi, J Gyulai, JW Mayer
Applied Physics Letters 42 (8), 672-674, 1983
2161983
Kinetics of TiSi2 formation by thin Ti films on Si
LS Hung, J Gyulai, JW Mayer, SS Lau, MA Nicolet
Journal of applied physics 54 (9), 5076-5080, 1983
1851983
Alloying Behavior of Au and Au–Ge on GaAs
J Gyulai, JW Mayer, V Rodriguez, AYC Yu, HJ Gopen
Journal of Applied Physics 42 (9), 3578-3585, 1971
1511971
Outdiffusion through silicon oxide and silicon nitride layers on gallium arsenide
J Gyulai, JW Mayer, IV Mitchell, V Rodriguez
Applied Physics Letters 17 (8), 332-334, 1970
1501970
Improvement of crystalline quality of epitaxial Si layers by ion‐implantation techniques
SS Lau, S Matteson, JW Mayer, P Revesz, J Gyulai, J Roth, TW Sigmon, ...
Applied Physics Letters 34 (1), 76-78, 1979
1441979
Continuous carbon nanotube production in underwater AC electric arc
LP Biró, ZE Horváth, L Szalmás, K Kertész, F Wéber, G Juhász, ...
Chemical physics letters 372 (3-4), 399-402, 2003
1162003
He-vacancy interactions in Si and their influence on bubble formation and evolution
V Raineri, S Coffa, E Szilagyi, J Gyulai, E Rimini
Physical Review B 61 (2), 937, 2000
1152000
Y-branching of single walled carbon nanotubes
P Nagy, R Ehlich, LP Biro, J Gyulai
Applied Physics A 70 (4), 481-483, 2000
1142000
Analysis of amorphous layers on silicon by backscattering and channeling effect measurements
O Meyer, J Gyulai, JW Mayer
Surface Science 22 (2), 263-276, 1970
1041970
Comparative study of surface roughness measured on polysilicon using spectroscopic ellipsometry and atomic force microscopy
P Petrik, LP Biró, M Fried, T Lohner, R Berger, C Schneider, J Gyulai, ...
Thin Solid Films 315 (1-2), 186-191, 1998
971998
Atomically resolved STM images of carbon nanotube defects produced by irradiation
Z Osváth, G Vértesy, L Tapasztó, F Wéber, ZE Horváth, J Gyulai, LP Biró
Physical Review B 72 (4), 045429, 2005
932005
Simulation of STM images of three-dimensional surfaces and comparison with experimental data: Carbon nanotubes
GI Márk, LP Biró, J Gyulai
Physical Review B 58 (19), 12645, 1998
831998
Influence of Cu as an impurity in Al/Ti and Al/W thin‐film reactions
I Krafcsik, J Gyulai, CJ Palmström, JW Mayer
Applied physics letters 43 (11), 1015-1017, 1983
791983
Scanning tunnelling microscopy (STM) imaging of carbon nanotubes
LP Biró, J Gyulai, P Lambin, JB Nagy, S Lazarescu, GI Márk, A Fonseca, ...
Carbon 36 (5-6), 689-696, 1998
701998
Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition
P Petrik, T Lohner, M Fried, LP Biró, NQ Khanh, J Gyulai, W Lehnert, ...
Journal of Applied Physics 87 (4), 1734-1742, 2000
662000
Catalyst traces and other impurities in chemically purified carbon nanotubes grown by CVD
LP Biro, NQ Khanh, Z Vertesy, ZE Horvath, Z Osvath, A Koos, J Gyulai, ...
Materials Science and Engineering: C 19 (1-2), 9-13, 2002
582002
Evaluation of Silicon Nitride Layers of Various Composition by Backscattering and Channeling‐Effect Measurements
J Gyulai, O Meyer, JW Mayer, V Rodriguez
Journal of Applied Physics 42 (1), 451-456, 1971
561971
Crystal orientation dependence of residual disorder in As− implanted Si
H Müller, WK Chu, J Gyulai, JW Mayer, TW Sigmon, TR Cass
Applied Physics Letters 26 (6), 292-294, 1975
551975
Analysis of silicon nitride layers on silicon by backscattering and channeling effect measurements
J Gyulai, O Meyer, JW Mayer, V Rodriguez
Applied Physics Letters 16 (6), 232-234, 1970
461970
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