| Generation and frequency multiplication by GaAs-diodes with tunnel boundaries ED Prokhorov, OV Botsula, OA Klimenko Telecommunications and Radio Engineering 71 (11), 2012 | 12 | 2012 |
| Generation of electromagnetic oscillations of submillimeter range by GazIn1-zAs diodes using impact ionization OV Botsula, KH Prykhodko Journal of nano-and electronic physics, 02009-1-02009-5, 2019 | 11 | 2019 |
| Heterostructure-based diode with cathode static domain OV Botsula, KH Prykhodko Telecommunications and Radio Engineering 76 (10), 2017 | 10 | 2017 |
| IMPACT IONIZATION IN SHORT AlZGa1-ZN-BASED DIODES OV Botsula, KH Pryhodko, VA Zozulia Telecommunications and Radio Engineering 76 (1), 2017 | 9 | 2017 |
| Monte-Carlo simulation of diodes with a cathode static domain ED Prokhorov, OV Botsula, AV Dyadchenko, IA Gorbunov 2013 23rd International Crimean Conference" Microwave & Telecommunication …, 2013 | 9 | 2013 |
| Joint operation of two-level resonant tunnelling and gunn diodes OV Botsula, ED Prokhorov Telecommunications and Radio Engineering 60 (5&6), 2003 | 9 | 2003 |
| Negative differential conductivity of a tunnel side-boundary semiconductor diode ED Prokhorov, OV Botsula Telecommunications and Radio Engineering 70 (9), 2011 | 8 | 2011 |
| Diode with cathode static domain as the source of HF-noise ED Prokhorov, OV Botsula 2009 19th International Crimean Conference Microwave & Telecommunication …, 2009 | 8 | 2009 |
| InGaAs-based graded gap active elements with static cathode domain for terahertz range OV Botsula, ÊH Prykhodko, VA Zozulia Æóðíàë íàíî-òà åëåêòðîííî¿ ô³çèêè, 01006-101006-5, 2019 | 7 | 2019 |
| Monte Carlo Modeling of the Diodes with Lateral Resonant Tunneling Border OV Botsula, KH Prykhodko, VO Zozulia 2018 9th International Conference on Ultrawideband and Ultrashort Impulse …, 2018 | 7 | 2018 |
| Graded band gap InGaAs diodes for terahertz applications KH Prykhodko, VO Zozulia, OV Botsula 2017 IEEE International Young Scientists Forum on Applied Physics and …, 2017 | 7 | 2017 |
| Resonant-tunneling cathode for a Gunn diode OV Botsula, ED Prokhorov, IP Storozhenko Telecommunications and Radio Engineering 68 (5), 2009 | 4 | 2009 |
| Special features of a joint operation of the resonant-tunnel diode and Gunn diode OV Botsula, ED Prokhorov Telecommunications and Radio Engineering 58 (7&8), 2002 | 4 | 2002 |
| Graded band InGaN-based diode for noise generation in terahertz range OV Botsula, KH Prykhodko 2020 IEEE Ukrainian Microwave Week (UkrMW), 925-928, 2020 | 3 | 2020 |
| Diodes with Lateral n+-n -Border OV Botsula, KH Prykhodko, VO Zozulia 2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering …, 2019 | 3 | 2019 |
| Static characteristics of the graded gap and heterojunction diodes containing the cathode static domain OV Botsula, KH Prykhodko 2016 8th International Conference on Ultrawideband and Ultrashort Impulse …, 2016 | 3 | 2016 |
| Generation efficiency of planar n+-n-n+ diode with tunnel boundaries ED Prokhorov, OV Botsula, OA Reutina 2013 23rd International Crimean Conference" Microwave & Telecommunication …, 2013 | 3 | 2013 |
| Impedance Characteristics of Diodes Operating Jointly and Having Negative Differential Conductivity OV Botsula, ED Prokhorov Telecommunications and Radio Engineering 61 (2-6), 2004 | 3 | 2004 |
| Analysis of Stochastic Current Oscillations in GaAs: Cr-Based Diodes OV Botsula, ED Prokhorov Telecommunications and Radio Engineering 52 (1), 1998 | 3 | 1998 |
| Generation of THz Oscillations by Diodes with Resonant Tunneling Boundaries OV Botsula, VO Zozulia Journal of Nano-and Electronic Physics 12 (6), 2020 | 2 | 2020 |
