Oleg Botsula
Oleg Botsula
Подтвержден адрес электронной почты в домене karazin.ua
Название
Процитировано
Процитировано
Год
Generation and frequency multiplication by GaAs-diodes with tunnel boundaries
ED Prokhorov, OV Botsula, OA Klimenko
Telecommunications and Radio Engineering 71 (11), 2012
112012
Joint operation of two-level resonant tunnelling and gunn diodes
OV Botsula, ED Prokhorov
Telecommunications and Radio Engineering 60 (5&6), 2003
112003
Negative differential conductivity of a tunnel side-boundary semiconductor diode
ED Prokhorov, OV Botsula
Telecommunications and Radio Engineering 70 (9), 2011
82011
Heterostructure-based diode with cathode static domain
OV Botsula, KH Prykhodko
Telecommunications and Radio Engineering 76 (10), 2017
72017
Monte-Carlo simulation of diodes with a cathode static domain
ED Prokhorov, OV Botsula, AV Dyadchenko, IA Gorbunov
2013 23rd International Crimean Conference" Microwave & Telecommunication …, 2013
72013
Diode with cathode static domain as the source of HF-noise
ED Prokhorov, OV Botsula
2009 19th International Crimean Conference Microwave & Telecommunication …, 2009
62009
Graded band gap InGaAs diodes for terahertz applications
KH Prykhodko, VO Zozulia, OV Botsula
2017 IEEE International Young Scientists Forum on Applied Physics and …, 2017
42017
IMPACT IONIZATION IN SHORT AlZGa1-ZN-BASED DIODES
OV Botsula, KH Pryhodko, VA Zozulia
Telecommunications and Radio Engineering 76 (1), 2017
42017
Special features of a joint operation of the resonant-tunnel diode and Gunn diode
OV Botsula, ED Prokhorov
Telecommunications and Radio Engineering 58 (7&8), 2002
42002
Monte Carlo Modeling of the Diodes with Lateral Resonant Tunneling Border
OV Botsula, KH Prykhodko, VO Zozulia
2018 9th International Conference on Ultrawideband and Ultrashort Impulse …, 2018
32018
Resonant-tunneling cathode for a Gunn diode
OV Botsula, ED Prokhorov, IP Storozhenko
Telecommunications and Radio Engineering 68 (5), 2009
32009
Impedance Characteristics of Diodes Operating Jointly and Having Negative Differential Conductivity
OV Botsula, ED Prokhorov
Telecommunications and Radio Engineering 61 (2-6), 2004
32004
Static characteristics of the graded gap and heterojunction diodes containing the cathode static domain
OV Botsula, KH Prykhodko
2016 8th International Conference on Ultrawideband and Ultrashort Impulse …, 2016
22016
Generation efficiency of planar n+-n-n+ diode with tunnel boundaries
ED Prokhorov, OV Botsula, OA Reutina
2013 23rd International Crimean Conference" Microwave & Telecommunication …, 2013
22013
Generation Efficiency of resonant-tunnel barrier diodes in sandwich-type structures
ED Prokhorov, OV Botsula, OA Klimenko, IP Storozhenko
Telecommunications and Radio Engineering 72 (17), 2013
22013
Effect of intervalley electron transfer on the efficiency of the generation in diodes with tunnel boundaries based on GaAs
ED Prokhorov, OV Botsula, OA Klimenko
Dopovyidyi Natsyional'noyi Akademyiyi Nauk Ukrayini, 75-80, 2012
22012
Analysis of Stochastic Current Oscillations in GaAs: Cr-Based Diodes
OV Botsula, ED Prokhorov
Telecommunications and Radio Engineering 52 (1), 1998
21998
Generation of Electromagnetic Oscillations of Submillimeter Range by GazIn1–zAs Diodes Using Impact Ionization
OV Botsula, КH Prykhodko
Sumy State University, 2019
12019
Negative differential conductivity of semiconductor diode with resonance-tunnel border
ED Prokhorov, OV Botsula
2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF …, 2010
12010
Harmonic generation and frequency multiplication caused by the impact ionization in GaN-diodes
OV Botsula, DV Pavlenko, ED Prokhorov
Telecommunications and Radio Engineering 69 (15), 2010
12010
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