Підписатись
Patrik Scajev
Patrik Scajev
Senior Researcher, Institute of Photonics and Nanotechnology, Vilnius University
Підтверджена електронна адреса в ff.vu.lt
Назва
Посилання
Посилання
Рік
Carrier dynamics in bulk GaN
P Šcˇajev, K Jarašiūnas, S Okur, Ü Özgür, H Morkoç
Journal of Applied Physics 111 (2), 2012
962012
Fast and slow carrier recombination transients in highly excited 4H–and 3C–SiC crystals at room temperature
P Ščajev, V Gudelis, K Jarašiūnas, PB Klein
Journal of Applied Physics 108 (2), 2010
872010
Diffusion Enhancement in Highly Excited MAPbI3 Perovskite Layers with Additives
P Scajev, C Qin, R Aleksieju̅nas, P Baronas, S Miasojedovas, T Fujihara, ...
The journal of physical chemistry letters 9 (12), 3167-3172, 2018
502018
Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques
P Ščajev, S Miasojedovas, A Mekys, D Kuciauskas, KG Lynn, SK Swain, ...
Journal of Applied Physics 123 (2), 2018
452018
Radiative efficiency and charge‐carrier lifetimes and diffusion length in polycrystalline CdSeTe heterostructures
D Kuciauskas, J Moseley, P Ščajev, D Albin
physica status solidi (RRL)–Rapid Research Letters 14 (3), 1900606, 2020
412020
Two regimes of carrier diffusion in vapor-deposited lead-halide perovskites
P Scajev, R Aleksiejunas, S Miasojedovas, S Nargelas, M Inoue, C Qin, ...
The Journal of Physical Chemistry C 121 (39), 21600-21609, 2017
382017
Nonequilibrium carrier dynamics in bulk HPHT diamond at two‐photon carrier generation
P Ščajev, V Gudelis, E Ivakin, K Jarašiūnas
physica status solidi (a) 208 (9), 2067-2072, 2011
382011
Temperature-and excitation-dependent carrier diffusivity and recombination rate in 4H-SiC
P Ščajev, K Jarašiūnas
Journal of Physics D: Applied Physics 46 (26), 265304, 2013
362013
Diffusion-limited nonradiative recombination at extended defects in hydride vapor phase epitaxy GaN layers
P Ščajev, A Usikov, V Soukhoveev, R Aleksiejūnas, K Jarašiūnas
Applied Physics Letters 98 (20), 2011
342011
Anisotropy of free-carrier absorption and diffusivity in m-plane GaN
P Ščajev, K Jarašiūnas, Ü Özgür, H Morkoç, J Leach, T Paskova
Applied Physics Letters 100 (2), 2012
322012
A carrier density dependent diffusion coefficient, recombination rate and diffusion length in MAPbI 3 and MAPbBr 3 crystals measured under one-and two-photon excitations
P Ščajev, S Miasojedovas, S Juršėnas
Journal of Materials Chemistry C 8 (30), 10290-10301, 2020
312020
Planar GeSn photodiode for high-detectivity photodetection at 1550 nm
KC Lee, MX Lin, H Li, HH Cheng, G Sun, R Soref, JR Hendrickson, ...
Applied Physics Letters 117 (1), 2020
302020
A diffraction-based technique for determination of interband absorption coefficients in bulk 3C-, 4H-and 6H-SiC crystals
P Ščajev, M Kato, K Jarašiūnas
Journal of Physics D: Applied Physics 44 (36), 365402, 2011
272011
Carrier recombination and diffusivity in microcrystalline CVD‐grown and single‐crystalline HPHT diamonds
P Ščajev, V Gudelis, K Jarašiūnas, I Kisialiou, E Ivakin, M Nesladek, ...
physica status solidi (a) 209 (9), 1744-1749, 2012
262012
Charge carrier trapping by dislocations in single crystal diamond
M Schreck, P Ščajev, M Träger, M Mayr, T Grünwald, M Fischer, S Gsell
Journal of Applied Physics 127 (12), 2020
212020
Luminescence properties of LiGaO2 crystal
L Trinkler, A Trukhin, B Berzina, V Korsaks, P Ščajev, R Nedzinskas, ...
Optical Materials 69, 449-459, 2017
212017
Photoluminescence kinetics for monitoring photoinduced processes in perovskite solar cells
NS Mahon, OV Korolik, MV Khenkin, GE Arnaoutakis, Y Galagan, ...
Solar Energy 195, 114-120, 2020
202020
Light-induced reflectivity transients in black-Si nanoneedles
P Ščajev, T Malinauskas, G Seniutinas, MD Arnold, A Gentle, ...
Solar Energy Materials and Solar Cells 144, 221-227, 2016
202016
Optical monitoring of nonequilibrium carrier diffusion in single crystalline CVD and HPHT diamonds under high optical excitation
P Ščajev, T Malinauskas, L Lubys, E Ivakin, M Nesladek, K Haenen, ...
physica status solidi (RRL)–Rapid Research Letters 5 (5‐6), 193-195, 2011
202011
Comparative studies of carrier dynamics in 3C-SiC layers grown on Si and 4H-SiC substrates
P Ščajev, J Hassan, K Jarašiūnas, M Kato, A Henry, JP Bergman
Journal of electronic materials 40, 394-399, 2011
202011
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