| Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes G Pennington, N Goldsman Physical Review B 68 (4), 045426, 2003 | 332 | 2003 |
| Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor S Potbhare, N Goldsman, G Pennington, A Lelis, JM McGarrity Journal of Applied Physics 100 (4), 2006 | 140 | 2006 |
| Electron transport and velocity oscillations in a carbon nanotube A Akturk, G Pennington, N Goldsman, A Wickenden IEEE Transactions on Nanotechnology 6 (4), 469-474, 2007 | 90 | 2007 |
| Low-field semiclassical carrier transport in semiconducting carbon nanotubes G Pennington, N Goldsman Physical Review B 71 (20), 205318, 2005 | 87 | 2005 |
| From graphene to graphite: A general tight-binding approach for nanoribbon carrier transport D Finkenstadt, G Pennington, MJ Mehl Physical Review B 76 (12), 121405, 2007 | 62 | 2007 |
| Self-consistent calculations for n-type hexagonal SiC inversion layers G Pennington, N Goldsman Journal of Applied Physics 95 (8), 4223-4234, 2004 | 56 | 2004 |
| A quasi-two-dimensional depth-dependent mobility model suitable for device simulation for Coulombic scattering due to interface trapped charges S Potbhare, N Goldsman, G Pennington, A Lelis, JM McGarrity Journal of applied physics 100 (4), 2006 | 54 | 2006 |
| Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors G Pennington, N Goldsman, A Akturk, AE Wickenden Applied Physics Letters 90 (6), 2007 | 51 | 2007 |
| Quantum modeling and proposed designs of CNT-embedded nanoscale MOSFETs A Akturk, G Pennington, N Goldsman IEEE transactions on electron devices 52 (4), 577-584, 2005 | 49 | 2005 |
| Empirical pseudopotential band structure of 3 C, 4 H, and 6 H SiC using transferable semiempirical Si and C model potentials G Pennington, N Goldsman Physical Review B 64 (4), 045104, 2001 | 41 | 2001 |
| Terahertz current oscillations in single-walled zigzag carbon nanotubes A Akturk, N Goldsman, G Pennington, A Wickenden Physical review letters 98 (16), 166803, 2007 | 35 | 2007 |
| Monte Carlo study of electron transport in a carbon nanotube G Pennington, N Goldsman IEICE transactions on electronics 86 (3), 372-378, 2003 | 33 | 2003 |
| Direct measurements at the sub-pixel level of the X-ray detection efficiency of the CCD on board the ASCA satellite K Yoshita, H Tsunemi, KC Gendreau, G Pennington, MW Bautz IEEE Transactions on Nuclear Science 45 (3), 915-920, 1998 | 31 | 1998 |
| Characterization of 4H-SiC MOSFET interface trap charge density using a first principles Coulomb scattering mobility model and device simulation S Potbhare, N Goldsman, G Pennington, JM McGarrity, A Lelis 2005 International Conference On Simulation of Semiconductor Processes and …, 2005 | 23 | 2005 |
| Nitrogen passivation of (0001) 4H-SiC silicon-face dangling bonds G Pennington, CR Ashman Applied Physics Letters 91 (7), 2007 | 22 | 2007 |
| Self-consistent ensemble Monte Carlo simulations show terahertz oscillations in single-walled carbon nanotubes A Akturk, N Goldsman, G Pennington Journal of Applied Physics 102 (7), 2007 | 18 | 2007 |
| Modeling the enhancement of nanoscale MOSFETs by embedding carbon nanotubes in the channel A Akturk, G Pennington, N Goldsman 2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003. 1, 24-27, 2003 | 14 | 2003 |
| First-principles study of oxygen adsorption on the nitrogen-passivated 4 H-SiC (0001) silicon face CR Ashman, G Pennington Physical Review B 80 (8), 085318, 2009 | 11 | 2009 |
| Simulation of electron transport in (0001) and (112¯ 0) 4H-SiC inversion layers G Pennington, N Goldsman Journal of Applied Physics 106 (6), 2009 | 10 | 2009 |
| Hot optical phonon decay in carbon nanotubes G Pennington, SJ Kilpatrick, AE Wickenden Applied Physics Letters 93 (9), 2008 | 10 | 2008 |
