Follow
Shu Yang
Title
Cited by
Cited by
Year
The 2018 GaN power electronics roadmap
H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
10532018
Effective passivation of AlGaN/GaN HEMTs by ALD-grown AlN thin film
S Huang, Q Jiang, S Yang, C Zhou, KJ Chen
IEEE Electron Device Letters 33 (4), 516-518, 2012
2812012
600-V Normally Off /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
Z Tang, Q Jiang, Y Lu, S Huang, S Yang, X Tang, KJ Chen
IEEE Electron Device Letters 34 (11), 1373-1375, 2013
2752013
Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors
S Huang, S Yang, J Roberts, KJ Chen
Japanese journal of applied physics 50 (11R), 110202, 2011
2302011
High-Quality Interface in MIS Structures With In Situ Pre-Gate Plasma Nitridation
S Yang, Z Tang, KY Wong, YS Lin, C Liu, Y Lu, S Huang, KJ Chen
IEEE Electron Device Letters 34 (12), 1497-1499, 2013
1852013
Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses
R Li, X Wu, S Yang, K Sheng
IEEE Transactions on Power Electronics 34 (2), 1044-1053, 2018
1612018
Mechanism of PEALD-grown AlN passivation for AlGaN/GaN HEMTs: Compensation of interface traps by polarization charges
S Huang, Q Jiang, S Yang, Z Tang, KJ Chen
IEEE electron device letters 34 (2), 193-195, 2013
1362013
Al2O3/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer
S Liu, S Yang, Z Tang, Q Jiang, C Liu, M Wang, KJ Chen
IEEE electron device letters 35 (7), 723-725, 2014
1262014
High-Voltage and High- Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination
S Han, S Yang, K Sheng
IEEE Electron Device Letters 39 (4), 572-575, 2018
1152018
Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen
IEEE Transactions on Electron Devices 62 (10), 3215-3222, 2015
1132015
Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer
S Liu, S Yang, Z Tang, Q Jiang, C Liu, M Wang, B Shen, KJ Chen
Applied Physics Letters 106 (5), 2015
1072015
Dynamic on-resistance in GaN power devices: Mechanisms, characterizations, and modeling
S Yang, S Han, K Sheng, KJ Chen
IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019
1062019
AC-capacitance techniques for interface trap analysis in GaN-based buried-channel MIS-HEMTs
S Yang, S Liu, Y Lu, C Liu, KJ Chen
IEEE Transactions on Electron Devices 62 (6), 1870-1878, 2015
1042015
GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNxas Gate Dielectric
M Hua, C Liu, S Yang, S Liu, K Fu, Z Dong, Y Cai, B Zhang, KJ Chen
IEEE Electron Device Letters 36 (5), 448-450, 2015
972015
Mapping of interface traps in high-performance Al2O3/AlGaN/GaN MIS-heterostructures using frequency- and temperature-dependent C-V techniques
S Yang, Z Tang, KY Wong, YS Lin, Y Lu, S Huang, KJ Chen
2013 IEEE International Electron Devices Meeting, 6.3. 1-6.3. 4, 2013
902013
Characterization of VT‐instability in enhancement‐mode Al2O3‐AlGaN/GaN MIS‐HEMTs
Y Lu, S Yang, Q Jiang, Z Tang, B Li, KJ Chen
physica status solidi (c) 10 (11), 1397-1400, 2013
892013
Impact of substrate bias polarity on buffer-related current collapse in AlGaN/GaN-on-Si power devices
S Yang, C Zhou, S Han, J Wei, K Sheng, KJ Chen
IEEE Transactions on Electron Devices 64 (12), 5048-5056, 2017
782017
Thermally stable enhancement-mode GaN metal-isolator-semiconductor high-electron-mobility transistor with partially recessed fluorine-implanted barrier
C Liu, S Yang, S Liu, Z Tang, H Wang, Q Jiang, KJ Chen
IEEE Electron Device Letters 36 (4), 318-320, 2015
692015
Fluorine-implanted termination for vertical GaN Schottky rectifier with high blocking voltage and low forward voltage drop
S Han, S Yang, K Sheng
IEEE Electron Device Letters 40 (7), 1040-1043, 2019
682019
O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors
S Huang, X Liu, K Wei, G Liu, X Wang, B Sun, X Yang, B Shen, C Liu, ...
Applied Physics Letters 106 (3), 2015
682015
The system can't perform the operation now. Try again later.
Articles 1–20