Nupur Bhargava
Nupur Bhargava
Підтверджена електронна адреса в udel.edu
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Посилання
Рік
Process for forming a film on a substrate using multi-port injection assemblies
J Margetis, J Tolle, G Bartlett, N Bhargava
US Patent 10,262,859, 2019
87*2019
Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy
JP Gupta, N Bhargava, S Kim, T Adam, J Kolodzey
Applied physics letters 102 (25), 251117, 2013
832013
Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy
N Bhargava, M Coppinger, J Prakash Gupta, L Wielunski, J Kolodzey
Applied Physics Letters 103 (4), 041908, 2013
742013
Radial and thickness control via biased multi-port injection settings
J Margetis, J Tolle, G Bartlett, N Bhargava
US Patent 9,892,913, 2018
722018
Photoconductivity of germanium tin alloys grown by molecular beam epitaxy
M Coppinger, J Hart, N Bhargava, S Kim, J Kolodzey
Applied Physics Letters 102 (14), 141101, 2013
372013
Selective epitaxial growth of high-P Si: P for source/drain formation in advanced Si nFETs
E Rosseel, SK Dhayalan, AY Hikavyy, R Loo, HB Profijt, D Kohen, ...
ECS Transactions 75 (8), 347, 2016
292016
Fundamentals of Ge1− xSnx and SiyGe1− x-ySnx RPCVD epitaxy
J Margetis, A Mosleh, SA Ghetmiri, S Al-Kabi, W Dou, W Du, N Bhargava, ...
Materials Science in Semiconductor Processing 70, 38-43, 2017
242017
Strain engineering in epitaxial Ge1− x Sn x: a path towards low-defect and high Sn-content layers
J Margetis, SQ Yu, N Bhargava, B Li, W Du, J Tolle
Semiconductor Science and Technology 32 (12), 124006, 2017
222017
Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si (0 0 1) and Ge (0 0 1) substrates: I—High-resolution x-ray diffraction and x-ray …
N Faleev, N Sustersic, N Bhargava, J Kolodzey, AY Kazimirov, ...
Journal of crystal growth 365, 44-53, 2013
222013
Current–voltage characteristics of GeSn/Ge heterojunction diodes grown by molecular beam epitaxy
S Kim, J Gupta, N Bhargava, M Coppinger, J Kolodzey
IEEE electron device letters 34 (10), 1217-1219, 2013
202013
Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si (001) and Ge (001) substrates: II—Transmission electron microscopy and atomic force …
N Faleev, N Sustersic, N Bhargava, J Kolodzey, S Magonov, DJ Smith, ...
Journal of crystal growth 365, 35-43, 2013
202013
Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
N Bhargava, J Tolle, J Margetis, M Goodman, R Vyne
US Patent 10,446,393, 2019
192019
Methods for forming a silicon germanium tin layer and related semiconductor device structures
N Bhargava, J Margetis, J Tolle
US Patent 10,685,834, 2020
182020
Infrared photoresponse of GeSn/n-Ge heterojunctions grown by molecular beam epitaxy
S Kim, N Bhargava, J Gupta, M Coppinger, J Kolodzey
Optics Express 22 (9), 11029-11034, 2014
182014
Structural properties of boron-doped germanium-tin alloys grown by molecular beam epitaxy
N Bhargava, JP Gupta, T Adam, J Kolodzey
Journal of electronic materials 43 (4), 931-937, 2014
92014
Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness
LR Shah, N Bhargava, S Kim, R Stearrett, X Kou, X Sun, S Sun, ...
Journal of applied physics 109 (7), 07C731, 2011
82011
Enhanced B doping in CVD-grown GeSn: B using B δ-doping layers
D Kohen, A Vohra, R Loo, W Vandervorst, N Bhargava, J Margetis, J Tolle
Journal of Crystal Growth 483, 285-290, 2018
72018
High detectivity dilute nitride strained layer superlattice detectors for LWIR and VLWIR applications
L Aina, H Hier, A Fathimulla, M Lecates, J Kolodzey, K Goossen, ...
Infrared physics & technology 52 (6), 310-316, 2009
52009
Growth of silicon-germanium-tin alloys and fabrication of magnetic tunnel junction biosensors
N Bhargava
University of Delaware, 2013
22013
Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
D Kohen, N Bhargava, J Tolle, V D'costa
US Patent 10,535,516, 2020
12020
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