| Radial and thickness control via biased multi-port injection settings J Margetis, J Tolle, G Bartlett, N Bhargava US Patent 9,892,913, 2018 | 358 | 2018 |
| Process for forming a film on a substrate using multi-port injection assemblies J Margetis, J Tolle, G Bartlett, N Bhargava US Patent 10,262,859, 2019 | 356 | 2019 |
| Methods for forming a silicon germanium tin layer and related semiconductor device structures N Bhargava, J Margetis, J Tolle US Patent 10,685,834, 2020 | 308 | 2020 |
| Methods for forming silicon-containing epitaxial layers and related semiconductor device structures N Bhargava, J Tolle, J Margetis, M Goodman, R Vyne US Patent 10,446,393, 2019 | 307 | 2019 |
| Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures D Kohen, N Bhargava, J Tolle, V D'costa US Patent 10,535,516, 2020 | 278 | 2020 |
| Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy JP Gupta, N Bhargava, S Kim, T Adam, J Kolodzey Applied physics letters 102 (25), 2013 | 120 | 2013 |
| Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy N Bhargava, M Coppinger, J Prakash Gupta, L Wielunski, J Kolodzey Applied Physics Letters 103 (4), 2013 | 113 | 2013 |
| Selective epitaxial growth of high-P Si: P for source/drain formation in advanced Si nFETs E Rosseel, SK Dhayalan, AY Hikavyy, R Loo, HB Profijt, D Kohen, ... ECS Transactions 75 (8), 347, 2016 | 50 | 2016 |
| Strain engineering in epitaxial Ge1− xSnx: a path towards low-defect and high Sn-content layers J Margetis, SQ Yu, N Bhargava, B Li, W Du, J Tolle Semiconductor Science and Technology 32 (12), 124006, 2017 | 49 | 2017 |
| Fundamentals of Ge1− xSnx and SiyGe1− x-ySnx RPCVD epitaxy J Margetis, A Mosleh, SA Ghetmiri, S Al-Kabi, W Dou, W Du, N Bhargava, ... Materials Science in Semiconductor Processing 70, 38-43, 2017 | 49 | 2017 |
| Photoconductivity of germanium tin alloys grown by molecular beam epitaxy M Coppinger, J Hart, N Bhargava, S Kim, J Kolodzey Applied Physics Letters 102 (14), 2013 | 42 | 2013 |
| Infrared photoresponse of GeSn/n-Ge heterojunctions grown by molecular beam epitaxy S Kim, N Bhargava, J Gupta, M Coppinger, J Kolodzey Optics express 22 (9), 11029-11034, 2014 | 32 | 2014 |
| Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si (0 0 1) and Ge (0 0 1) substrates: I—High-resolution x-ray diffraction and x-ray … N Faleev, N Sustersic, N Bhargava, J Kolodzey, AY Kazimirov, ... Journal of crystal growth 365, 44-53, 2013 | 24 | 2013 |
| Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si (001) and Ge (001) substrates: II—Transmission electron microscopy and atomic force … N Faleev, N Sustersic, N Bhargava, J Kolodzey, S Magonov, DJ Smith, ... Journal of crystal growth 365, 35-43, 2013 | 23 | 2013 |
| Current–voltage characteristics of GeSn/Ge heterojunction diodes grown by molecular beam epitaxy S Kim, J Gupta, N Bhargava, M Coppinger, J Kolodzey IEEE electron device letters 34 (10), 1217-1219, 2013 | 20 | 2013 |
| Enhanced B doping in CVD-grown GeSn: B using B δ-doping layers D Kohen, A Vohra, R Loo, W Vandervorst, N Bhargava, J Margetis, J Tolle Journal of Crystal Growth 483, 285-290, 2018 | 13 | 2018 |
| Structural properties of boron-doped germanium-tin alloys grown by molecular beam epitaxy N Bhargava, JP Gupta, T Adam, J Kolodzey Journal of electronic materials 43, 931-937, 2014 | 13 | 2014 |
| Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness LR Shah, N Bhargava, S Kim, R Stearrett, X Kou, X Sun, S Sun, ... Journal of applied physics 109 (7), 2011 | 12 | 2011 |
| As doping of Si–Ge–Sn epitaxial semiconductor materials on a commercial CVD reactor N Bhargava, J Margetis, J Tolle Semiconductor Science and Technology 32 (9), 094003, 2017 | 8 | 2017 |
| High detectivity dilute nitride strained layer superlattice detectors for LWIR and VLWIR applications L Aina, H Hier, A Fathimulla, M Lecates, J Kolodzey, K Goossen, ... Infrared physics & technology 52 (6), 310-316, 2009 | 6 | 2009 |
