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Tetiana Afanasieva
Tetiana Afanasieva
Senior Researcher, Institute of Physics, Kyiv, Ukraine
Verified email at iop.kiev.ua
Title
Cited by
Cited by
Year
New features of the Si (100)-c (4× 4) reconstruction observed with STM: suggestion of the structure with lowered symmetry
A Goryachko, PV Melnik, NG Nakhodkin, TV Afanasjeva, IF Koval
Surface science 497 (1-3), 47-58, 2002
292002
Honeycomb BeO monolayer on the Mo (112) surface: LEED and DFT study
TV Afanasieva, AG Fedorus, DV Rumiantsev, IN Yakovkin
Applied Surface Science 428, 815-818, 2018
222018
Adsorption of bismuth on Si (001) studied by AES, REELS and mass spectrometry
TV Afanasieva, IF Koval, PV Melnik, NG Nakhodkin
Surf. Sci 331, 585, 1995
19*1995
Diffusion of Si and Ge dimers on Ge (001) surfaces
TV Afanasieva, SY Bulavenko, IF Koval, HJW Zandvliet
Journal of applied physics 93 (3), 1452-1456, 2003
142003
Interaction of O2 with the BiSi (001) system: from passivation to promoted oxidation
IF Koval, PV Melnik, NG Nakhodkin, MY Pyatnitsky, TV Afanasieva
Surface science 384 (1-3), L844-L847, 1997
121997
Mesoscopic self-ordering in oxygen doped Ce films adsorbed on Mo (112)
TV Afanasieva, AG Fedorus, AM Goriachko, AG Naumovets, ...
Surface Science 705, 121766, 2021
102021
STRUCTURE OF PURE Si–Si, Ge–Ge, AND MIXED Si–Ge ADDIMERS ON Si (001) SURFACE
TV AFANASIEVA, AA GREENCHUCK, IP KOVAL, MG NAKHODKIN
Ukrainian journal of physics 56 (3), 240-247, 2011
102011
Effects of adsorbed bismuth on Si(001) surface electronic states
M. Yu. Pyatnitskii, I. F. Koval’, P. V. Mel’nik, N. G. Nakhodkin, T. V ...
Theoretical and Experimental Chemistry 32 (3), 148-151, 1996
10*1996
Coadsorbed oligolayers of beryllium and oxygen on molybdenum (1 1 2) surface: Formation and chemical composition, atomic structure and evaporation
TV Afanasieva, AG Fedorus, AG Naumovets, DV Rumiantsev
Surface Science 682, 14-24, 2019
92019
Adsorption of V-group elements and oxygen on Si (001) 2× 1 surface
TV Afanasieva, IF Koval, NG Nakhodkin
Surface science 507, 789-796, 2002
72002
Adsorption and dynamics of group IV, V atoms and molecular oxygen on semiconductor group IV (0 0 1) surfaces
T Afanasieva
Journal of Physics: Condensed Matter 28 (31), 313001, 2016
52016
Excitation spectra of Bi/Si (001) interfaces: anregungsspektren von Bi/Si (001) grenzflächen
VV Buchenko, AA Goloborodko, TV Afanasieva
Materialwissenschaft und Werkstofftechnik 47 (2-3), 120-127, 2016
52016
Interaction of Molecular Oxygen with a Submonolayer Sb Coverage on a Si (001) Surface
TV Afanasieva, IF Koval, YA Len, NG Nakhodkin
UKRAINS'KYI FIZYCHNYI ZHURNAL 50 (7), 685, 2005
32005
Adsorption of V Group Metals and Oxygen on the Silicon Surface Si (001) 2x1. 1. Adsorption of As, Sb and Bi
TV Afanasieva, IF Koval, NG Nakhodkin, MY Pyatnitsky
UKRAINS'KYI FIZYCHNYI ZHURNAL 44, 1133-1141, 1999
31999
DFT study of oxygen adsorption on the Be-covered Mo (112) surface
TV Afanasieva, NV Petrova, IN Yakovkin
Surface Review and Letters 22 (05), 1550059, 2015
22015
Study of the Interaction of Atoms of the IV- and V-th Groups with Si(001) and Ge(001) Surfaces
TV Afanasieva
Ukr. J. Phys. 60 (2), 130-140, 2015
22015
Adsorption of molecular oxygen onto Si1-xGex/Si (001) surface
AA Greenchuk, TV Afanasieva, IP Koval, MG Nakhodkin
Ukrainian journal of physics, 355-360, 2012
2*2012
Rotation of Ge ad-dimers on Ge (0 0 1)
TV Afanasieva, IF Koval, NG Nakhodkin, MY Pyatnitsky, HJW Zandvliet
Surface science 482, 702-707, 2001
22001
Interaction of an Oxygen Molecule with the Si(001)2x1 Surface. Influence of the Initial Surface Charge
Afanas'eva T.V., Glavatsky V.O., Koval I.P., Nakhodkin M.G.
Ukr. J. Phys. 46 (12), 1280-1283, 2001
2*2001
DIFFUSION OF OXYGEN ATOM INTO SUBSURFACE LAYERS OF GexSi1-x/Si (001) INTERFACE
TV Afanasieva, AA Greenchuck, K IP, MG Nakhodkin
Ukrainian Journal of Physics 56 (4), 352-358, 2011
12011
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