Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors X Hu, AP Karmarkar, B Jun, DM Fleetwood, RD Schrimpf, RD Geil, ...
IEEE Transactions on Nuclear Science 50 (6), 1791-1796, 2003
189 2003 Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence BD White, M Bataiev, SH Goss, X Hu, A Karmarkar, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 50 (6), 1934-1941, 2003
118 2003 Dimensionality and temperature dependence of the radiative lifetime of J-aggregates with Davydov splitting of the exciton band IG Scheblykin, MM Bataiev, M Van der Auweraer, AG Vitukhnovsky
Chemical Physics Letters 316 (1-2), 37-44, 2000
80 2000 Non-coherent exciton migration in J-aggregates of the dye THIATS: exciton–exciton annihilation and fluorescence depolarization IG Scheblykin, OP Varnavsky, MM Bataiev, O Sliusarenko, ...
Chemical physics letters 298 (4-6), 341-350, 1998
61 1998 Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy BD White, M Bataiev, LJ Brillson, BK Choi, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 49 (6), 2695-2701, 2002
57 2002 Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2–HfO2–SiO2–Si stacks YM Strzhemechny, M Bataiev, SP Tumakha, SH Goss, CL Hinkle, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
15 2008 Detection of trap activation by ionizing radiation in BD White, LJ Brillson, M Bataiev, LJ Brillson, DM Fleetwood, RD Schrimpf, ...
Journal of applied physics 92 (10), 5729-5734, 2002
10 2002 Origins of luminescence from nitrogen-ion-implanted epitaxial X Weng, RS Goldman, V Rotberg, N Bataiev, LJ Brillson
Applied physics letters 85 (14), 2774-2776, 2004
5 2004 M. vanderAuweraer, AG Vitukhnovsky IG Scheblykin, OP Varnavsky, MM Bataiev, O Sliusarenko
Chem. Phys. Lett 298, 341-350, 1998
4 1998 EPR study of interlayer interaction in Gd2O3/Fe nanostructure AM Kasumov, AI Dmitriev, M Bataiev Yu, MM Bataiev, VM Karavaeva, ...
Him. Fiz. Tehnol. Poverhni 12 (2), 144, 2021
3 2021 EPR-Spectral, Magnetic, and Ionic Features of Ceo2, Yb2O3, Yb2O3-Ceo2 Powders and Ceramics Based on REO Oxides YM Bataiev, MM Bataiev, OA Kornienko, OM Lavrynenko, OY Pavlenko
Scientific Herald of Uzhhorod University. Series “Physics 49, 9-18, 2021
2 2021 UV irradiation effect on paramagnetic properties of nanomagnetite doped with Ag (I) and Au (III) cations OM Lavrynenko, MN Zahornyi, MM Bataiev, YM Bataiev, OY Pavlenko, ...
Chemistry 11 (4), 508-515, 2020
1 2020 Дослідження методом ЕПР міжшарової взаємодії в наноструктурі Gd 2 O 3/Fe AM Kasumov, AI Dmitriev, YM Bataiev, MM Bataiev, VM Karavaeva, ...
Хімія, фізика та технологія поверхні 12 (2), 144-148, 2021
2021 Ferrimagnetic Resonance of High-Tc Organic-Based Magnet V[TCNE]x (x ≈ 2) Films. YN Bataiev, NP Raju, KI Pokhodnya, MM Bataiev, AJ Epstein, ...
Nanosistemi, Nanomateriali, Nanotehnologii 18 (4), 2020
2020 ВПЛИВ ТЕМПЕРАТУРИ НА СТРУКТУРОУТВОРЕННЯ В СИСТЕМІ CeO2-Yb2O3 OM Lavrynenko, OI Bykov, YM Bataiev, MM Bataiev, OA Kornienko
Вісник Одеського національного університету. Хімія 25 (3 (75)), 76-85, 2020
2020 Surface Magnetic Properties and Magnetization Dynamics of Magnetite Nanoparticles Doped with Platinum Ions. MM Bataiev, YM Bataiev, OM Lavrynenko, OA Kornienko
Nanosistemi, Nanomateriali, Nanotehnologii 18 (2), 2020
2020 Вплив УФ опромінення на парамагнітні властивості наномагнетиту, допованого катіонами Ag (I) и Au (III) OM Lavrynenko, MN Zahornyi, MM Bataiev, YM Bataiev, OY Pavlenko, ...
Хімія, фізика та технологія поверхні 11 (4), 508-515, 2020
2020 Effect of copper addition on stability of bioceramics based on biogenic hydroxyapatite and sodium borosilicate glass in physiological solutions BOM Sych O.E., Boshytska N.V., Kuda O.A., Demyda M.B., Pinchuk N.D., Тоmila ...
Reports of the National Academy of Sciences of Ukraine 3 (Materials Science …, 2020
2020 Effect of proton irradiation on the parameters of AlGaN/GaN HEMTs. M Bataiev, Y Bataiev, L Brillson
Semiconductor Physics, Quantum Electronics & Optoelectronics 14 (4), 2011
2011 Effect of proton irradiation on AlGaN/AlN/GaN HEMTs. M Bataiev, Y Bataiev, L Brillson
Semiconductor Physics, Quantum Electronics & Optoelectronics 14 (3), 2011
2011 