Liquid water as a lone‐pair amorphous semiconductor F Williams, SP Varma, S Hillenius
The Journal of Chemical Physics 64 (4), 1549-1554, 1976
249 1976 The vertical replacement-gate (VRG) MOSFET: A 50-nm vertical MOSFET with lithography-independent gate length JM Hergenrother, D Monroe, FP Klemens, A Komblit, GR Weber, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
211 1999 Explanation of reverse short channel effect by defect gradients CS Rafferty, HH Vuong, SA Eshraghi, MD Giles, MR Pinto, SJ Hillenius
Proceedings of IEEE International Electron Devices Meeting, 311-314, 1993
123 1993 Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs G Timp, A Agarwal, FH Baumann, T Boone, M Buonanno, R Cirelli, ...
International Electron Devices Meeting. IEDM Technical Digest, 930-932, 1997
118 1997 Anomalous CV characteristics of implanted poly MOS structure in n/sup+//p/sup+/dual-gate CMOS technology CY Lu, JM Sung, HC Kirsch, SJ Hillenius, TE Smith, L Manchanda
IEEE Electron Device Letters 10 (5), 192-194, 1989
97 1989 A symmetric submicron CMOS technology SJ Hillenius, R Liu, GE Georgiou, RL Field, DS Williams, A Kornblit, ...
1986 International Electron Devices Meeting, 252-255, 1986
85 1986 Fluorine effect on boron diffusion of p/sup+/gate devices (MOSFETs) JM Sung, CY Lu, ML Chen, SJ Hillenius, WS Lindenberger, L Manchanda, ...
International Technical Digest on Electron Devices Meeting, 447-450, 1989
84 1989 Dimensional crossover in the superconducting intercalated layer compound RV Coleman, GK Eiserman, SJ Hillenius, AT Mitchell, JL Vicent
Physical Review B 27 (1), 125, 1983
81 1983 A novel, aerosol-nanocrystal floating-gate device for non-volatile memory applications J De Blauwe, M Ostraat, ML Green, G Weber, T Sorsch, A Kerber, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
69 2000 Multigigahertz CMOS dual-modulus prescaler IC HI Cong, JM Andrews, DM Boulin, SC Fang, SJ Hillenius, JA Michejda
IEEE journal of solid-state circuits 23 (5), 1189-1194, 1988
68 1988 Metal-insulator transition and charge-density wave in SJ Hillenius, RV Coleman, RM Fleming, RJ Cava
Physical Review B 23 (4), 1567, 1981
67 1981 50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics JM Hergenrother, GD Wilk, T Nigam, FP Klemens, D Monroe, ...
Technical Digest-International Electron Devices Meeting, 51-54, 2001
64 2001 Process limitation and device design tradeoffs of self-aligned TiSi/sub 2/junction formation in submicrometer CMOS devices CY Lu, JJ Sung, R Liu, NS Tsai, R Sing, SJ Hillenius, HC Kirsch
IEEE transactions on electron devices 38 (2), 246-254, 1991
63 1991 Improved film growth and flatband voltage control of ALD HfO/sub 2/and Hf-Al-O with n/sup+/poly-Si gates using chemical oxides and optimized post-annealing GD Wilk, ML Green, MY Ho, BW Busch, TW Sorsch, FP Klemens, B Brijs, ...
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002
56 2002 Light nitrogen implant for preparing thin-gate oxides CT Liu, Y Ma, J Becerro, S Nakahara, DJ Eaglesham, SJ Hillenius
IEEE Electron Device Letters 18 (3), 105-107, 1997
56 1997 Self-powered device SJ Hillenius
US Patent 5,642,014, 1997
49 1997 A highly manufacturable corner rounding solution for 0.18/spl mu/m shallow trench isolation CP Chang, CS Pai, FH Baumann, CT Liu, CS Rafferty, MR Pinto, EJ Lloyd, ...
International Electron Devices Meeting. IEDM Technical Digest, 661-664, 1997
48 1997 Self-aligned cobalt disilicide for gate and interconnection and contacts to shallow junctions SP Murarka, DB Fraser, AK Sinha, HJ Levinstein, EJ Lloyd, R Liu, ...
IEEE transactions on electron devices 34 (10), 2108-2115, 1987
48 1987 A 6.75 ns 16* 16 bit multiplier in single-level-metal CMOS technology R Sharma, AD Lopez, JA Michejda, SJ Hillenius, JM Andrews, ...
IEEE Journal of Solid-State Circuits 24 (4), 922-927, 1989
47 1989 Preventing boron penetration through 25-/spl Aring/gate oxides with nitrogen implant in the Si substrates CT Liu, Y Ma, H Luftman, SJ Hillenius
IEEE Electron Device Letters 18 (5), 212-214, 1997
45 1997 
Conor RaffertyAbcam, PLCПодтвержден адрес электронной почты в домене abcam.com
