Robert Martin
Robert Martin
Professor of Physics, Strathclyde University
Подтвержден адрес электронной почты в домене
Origin of luminescence from InGaN diodes
KP O'donnell, RW Martin, PG Middleton
Physical Review Letters 82 (1), 237, 1999
Exciton localization and the Stokes’ shift in InGaN epilayers
RW Martin, PG Middleton, KP O’donnell, W Van der Stricht
Applied physics letters 74 (2), 263-265, 1999
Anomalous ion channeling in AlInN/GaN bilayers: determination of the strain state
K Lorenz, N Franco, E Alves, IM Watson, RW Martin, KP O’donnell
Physical review letters 97 (8), 085501, 2006
Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes
HW Choi, CW Jeon, MD Dawson, PR Edwards, RW Martin, S Tripathy
Journal of Applied Physics 93 (10), 5978-5982, 2003
Structural analysis of InGaN epilayers
KP O'Donnell, JFW Mosselmans, RW Martin, S Pereira, ME White
Journal of Physics: Condensed Matter 13 (32), 6977, 2001
High extraction efficiency InGaN micro-ring light-emitting diodes
HW Choi, MD Dawson, PR Edwards, RW Martin
Applied physics letters 83 (22), 4483-4485, 2003
Selectively excited photoluminescence from Eu-implanted GaN
K Wang, RW Martin, KP O’Donnell, V Katchkanov, E Nogales, K Lorenz, ...
Applied physics letters 87 (11), 112107, 2005
Raman-scattering study of the InGaN alloy over the whole composition range
S Hernández, R Cuscó, D Pastor, L Artús, KP O’Donnell, RW Martin, ...
Journal of Applied Physics 98 (1), 013511, 2005
Optical properties of high quality Cu2ZnSnSe4 thin films
F Luckert, DI Hamilton, MV Yakushev, NS Beattie, G Zoppi, M Moynihan, ...
Applied Physics Letters 99 (6), 062104, 2011
Two-dimensional spin confinement in strained-layer quantum wells
PJW RW Martin, RJ Nicholas, GJ Rees, SK Haywood, NJ Mason
Phys. Rev. B 42, 9237, 1990
An organic down‐converting material for white‐light emission from hybrid LEDs
NJ Findlay, J Bruckbauer, AR Inigo, B Breig, S Arumugam, DJ Wallis, ...
Advanced Materials 26 (43), 7290-7294, 2014
High-temperature annealing and optical activation of Eu-implanted
K Lorenz, U Wahl, E Alves, S Dalmasso, RW Martin, KP O'Donnell, ...
Applied physics letters 85 (14), 2712-2714, 2004
Identification of the prime optical center in GaN: Eu 3+
IS Roqan, KP O'Donnell, RW Martin, PR Edwards, SF Song, A Vantomme, ...
Physical Review B 81 (8), 085209, 2010
Optical energies of AlInN epilayers
K Wang, RW Martin, D Amabile, PR Edwards, S Hernandez, E Nogales, ...
Journal of Applied Physics 103 (7), 073510, 2008
High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures
J Bruckbauer, PR Edwards, T Wang, RW Martin
Applied Physics Letters 98 (14), 141908, 2011
Highly mismatched crystalline and amorphous alloys in the whole composition range
KM Yu, SV Novikov, R Broesler, IN Demchenko, JD Denlinger, ...
Journal of Applied Physics 106 (10), 103709, 2009
Cathodoluminescence nano-characterization of semiconductors
PR Edwards, RW Martin
Semiconductor Science and Technology 26 (6), 064005, 2011
Relaxation of compressively strained AlInN on GaN
K Lorenz, N Franco, E Alves, S Pereira, IM Watson, RW Martin, ...
Journal of crystal growth 310 (18), 4058-4064, 2008
Quantum dot emission from site-controlled micropyramid arrays
PR Edwards, RW Martin, IM Watson, C Liu, RA Taylor, JH Rice, JH Na, ...
Applied Physics Letters 85 (19), 4281-4283, 2004
Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer
L Nistor, H Bender, A Vantomme, MF Wu, J Van Landuyt, KP O’Donnell, ...
Applied Physics Letters 77 (4), 507-509, 2000
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Статьи 1–20