Valery Yu. Davydov
Valery Yu. Davydov
Dr. Sci., Leading Researcher, Ioffe Institute
Підтверджена електронна адреса в mail.ioffe.ru
Назва
Посилання
Посилання
Рік
Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap
VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
physica status solidi (b) 229 (3), r1-r3, 2002
13492002
Phonon dispersion and Raman scattering in hexagonal GaN and AlN
VY Davydov, YE Kitaev, IN Goncharuk, AN Smirnov, J Graul, ...
Physical Review B 58 (19), 12899, 1998
8171998
Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC
VY Davydov, NS Averkiev, IN Goncharuk, DK Nelson, IP Nikitina, ...
Journal of applied physics 82 (10), 5097-5102, 1997
4271997
Band gap of hexagonal InN and InGaN alloys
VY Davydov, AA Klochikhin, VV Emtsev, DA Kurdyukov, SV Ivanov, ...
physica status solidi (b) 234 (3), 787-795, 2002
4202002
Band Gap of InN and In‐Rich InxGa1—xN alloys (0.36 < x < 1)
VY Davydov, AA Klochikhin, VV Emtsev, SV Ivanov, VV Vekshin, ...
physica status solidi (b) 230 (2), R4-R6, 2002
4102002
Experimental and theoretical studies of phonons in hexagonal InN
VY Davydov, VV Emtsev, IN Goncharuk, AN Smirnov, VD Petrikov, ...
Applied physics letters 75 (21), 3297-3299, 1999
3061999
Acceptor states in the photoluminescence spectra of
AA Klochikhin, VY Davydov, VV Emtsev, AV Sakharov, VA Kapitonov, ...
Physical Review B 71 (19), 195207, 2005
1702005
Composition dependence of optical phonon energies and Raman line broadening in hexagonal Al x Ga 1− x N alloys
VY Davydov, IN Goncharuk, AN Smirnov, AE Nikolaev, WV Lundin, ...
Physical Review B 65 (12), 125203, 2002
1612002
Phonon structure of InN grown by atomic layer epitaxy
T Inushima, T Shiraishi, VY Davydov
Solid state communications 110 (9), 491-495, 1999
1581999
Diamond-graphite phase transition in ultradisperse-diamond clusters
AE Aleksenskii, MV Baidakova, AY Vul, VY Davydov, YA Pevtsova
Physics of the Solid State 39 (6), 1007-1015, 1997
1321997
Energy gap and optical properties of InxGa1–xN
F Bechstedt, J Furthmüller, M Ferhat, LK Teles, LMR Scolfaro, JR Leite, ...
physica status solidi (a) 195 (3), 628-633, 2003
1312003
Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
AG Bhuiyan, K Sugita, K Kasashima, A Hashimoto, A Yamamoto, ...
Applied physics letters 83 (23), 4788-4790, 2003
1222003
Phys. Status Solidi B https://doi. org/10.1002/1521-3951 (200202) 229: 3< R1:: AID-PSSB99991> 3.0. CO; 2-O 229
VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
R1, 2002
1212002
InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates
J Aderhold, VY Davydov, F Fedler, H Klausing, D Mistele, T Rotter, ...
Journal of crystal growth 222 (4), 701-705, 2001
1152001
Phase transition-governed opal–VO2 photonic crystal
VG Golubev, VY Davydov, NF Kartenko, DA Kurdyukov, AV Medvedev, ...
Applied Physics Letters 79 (14), 2127-2129, 2001
1032001
Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer
CH Shen, HY Chen, HW Lin, S Gwo, AA Klochikhin, VY Davydov
Applied physics letters 88 (25), 253104, 2006
1012006
Electronic and vibrational states in InN and In x Ga 1− x N solid solutions
VY Davydov, AA Klochikhin
Semiconductors 38 (8), 861-898, 2004
101*2004
Indium nitride and related alloys
TD Veal, CF McConville, WJ Schaff
CRC press, 2011
872011
Graphene based sensor for environmental monitoring of NO2
S Novikov, N Lebedeva, A Satrapinski, J Walden, V Davydov, A Lebedev
Sensors and Actuators B: Chemical 236, 1054-1060, 2016
672016
MBE growth of hexagonal InN films on sapphire with different initial growth stages
VV Mamutin, VA Vekshin, VY Davydov, VV Ratnikov, TV Shubina, ...
physica status solidi (a) 176 (1), 247-252, 1999
661999
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