Andrian Kuchuk, A. Kuchuk, A.V. Kuchuk, Andrian V Kuchuk, Кучук А.В.
Andrian Kuchuk, A. Kuchuk, A.V. Kuchuk, Andrian V Kuchuk, Кучук А.В.
Institute for Nanoscience & Engineering, University of Arkansas, Fayetteville, USA
Підтверджена електронна адреса в uark.edu
НазваПосиланняРік
Low-temperature method for thermochromic high ordered VO2 phase formation
V Melnik, I Khatsevych, V Kladko, A Kuchuk, V Nikirin, B Romanyuk
Materials Letters 68, 215-217, 2012
562012
Substrate effects on the strain relaxation in GaN/AlN short-period superlattices
V Kladko, A Kuchuk, P Lytvyn, O Yefanov, N Safriuk, A Belyaev, YI Mazur, ...
Nanoscale research letters 7 (1), 1-9, 2012
372012
Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H silicon carbide
A Kuchuk, V Kladko, M Guziewicz, A Piotrowska, R Minikayev, A Stonert, ...
Journal of Physics: Conference Series 100 (4), 042003, 2008
352008
Long-term stability of Ni–silicide ohmic contact to n-type 4H–SiC
AV Kuchuk, M Guziewicz, R Ratajczak, M Wzorek, VP Kladko, ...
Microelectronic Engineering 85 (10), 2142-2145, 2008
332008
Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride
AE Belyaev, NS Boltovets, VN Ivanov, VP Klad’ko, RV Konakova, ...
Semiconductors 42 (6), 689-693, 2008
31*2008
Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics
SA Ghetmiri, Y Zhou, J Margetis, S Al-Kabi, W Dou, A Mosleh, W Du, ...
Optics letters 42 (3), 387-390, 2017
302017
Effect of p-n junction overheating on degradation of silicon high-power pulsed IMPATT diodes
AE Belyaev, VV Basanets, NS Boltovets, AV Zorenko, LM Kapitanchuk, ...
Semiconductors 45 (2), 253-259, 2011
25*2011
Ni-based ohmic contacts to n-type 4H-SiC: The formation mechanism and thermal stability
AV Kuchuk, P Borowicz, M Wzorek, M Borysiewicz, R Ratajczak, ...
Advances in Condensed Matter Physics 2016, 2016
242016
Thermal degradation of Au/Ni2Si/n-SiC ohmic contacts under different conditions
AV Kuchuk, M Guziewicz, R Ratajczak, M Wzorek, VP Kladko, ...
Materials Science and Engineering: B 165 (1-2), 38-41, 2009
222009
Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures
VP Kladko, AV Kuchuk, NV Safryuk, VF Machulin, AE Belyaev, ...
Applied physics letters 95 (3), 031907, 2009
212009
Amorphous Ta–Si–N diffusion barriers on GaAs
A Kuchuk, E Kaminska, A Piotrowska, K Golaszewska, E Dynowska, ...
Thin Solid Films 459 (1-2), 292-296, 2004
192004
X-ray diffraction investigation of GaN layers on Si (111) and Al₂O₃ (0001) substrates
NV Safriuk, GV Stanchu, AV Kuchuk, VP Kladko, AE Belyaev, ...
Semiconductor physics quantum electronics & optoelectronics, 2013
182013
On the formation of Ni-based ohmic contacts to n-type 4H-SiC
AV Kuchuk, VP Kladko, A Piotrowska, R Ratajczak, R Jakieła
Materials Science Forum 615, 573-576, 2009
182009
Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlattices
AV Kuchuk, VP Kladko, TL Petrenko, VP Bryksa, AE Belyaev, YI Mazur, ...
Nanotechnology 25 (24), 245602, 2014
162014
Structural transformation and functional properties of vanadium oxide films after low-temperature annealing
Y Goltvyanskyi, I Khatsevych, A Kuchuk, V Kladko, V Melnik, P Lytvyn, ...
Thin Solid Films 564, 179-185, 2014
152014
TEM characterisation of silicide phase formation in Ni-based ohmic contacts to 4H n-SiC
M Wzorek, A Czerwinski, A Kuchuk, J Ratajczak, A Piotrowska, J Katcki
Materials transactions 52 (3), 315-318, 2011
152011
Influence of template type and buffer strain on structural properties of GaN multilayer quantum wells grown by PAMBE, an x-ray study
VP Kladko, AV Kuchuk, NV Safryuk, VF Machulin, PM Lytvyn, ...
Journal of Physics D: Applied Physics 44 (2), 025403, 2010
142010
Structural and optical characteristics of GeSn quantum wells for silicon-based mid-infrared optoelectronic applications
W Dou, SA Ghetmiri, S Al-Kabi, A Mosleh, Y Zhou, B Alharthi, W Du, ...
Journal of Electronic Materials 45 (12), 6265-6272, 2016
132016
Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate
AV Kuchuk, PM Lytvyn, C Li, HV Stanchu, YI Mazur, ME Ware, ...
ACS applied materials & interfaces 7 (41), 23320-23327, 2015
132015
Nanostructured Y‐doped ZrO2 powder: peculiarities of light emission under electron beam excitation
N Korsunska, V Papusha, O Kolomys, V Strelchuk, A Kuchuk, V Kladko, ...
physica status solidi (c) 11 (9‐10), 1417-1422, 2014
132014
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