Підписатись
George Lashkarev
George Lashkarev
IPMS
Підтверджена електронна адреса в ipms.kiev.ua
Назва
Посилання
Посилання
Рік
Tuning the bandgap of exfoliated InSe nanosheets by quantum confinement
GW Mudd, SA Svatek, T Ren, A Patanè, O Makarovsky, L Eaves, ...
Advanced Materials (Deerfield Beach, Fla.) 25 (40), 5714, 2013
6242013
Structural and morphological properties of ZnO: Ga thin films
V Khranovskyy, U Grossner, O Nilsen, V Lazorenko, GV Lashkarev, ...
Thin Solid Films 515 (2), 472-476, 2006
1362006
Photoluminescence of two-dimensional GaTe and GaSe films
O Del Pozo-Zamudio, S Schwarz, M Sich, IA Akimov, M Bayer, ...
2D Materials 2 (3), 035010, 2015
1002015
Electronic band structure of GaSe (0001): Angle-resolved photoemission and ab initio theory
L Plucinski, RL Johnson, BJ Kowalski, K Kopalko, BA Orlowski, ...
Physical Review B 68 (12), 125304, 2003
852003
PEMOCVD of ZnO thin films, doped by Ga and some of their properties
V Khranovskyy, U Grossner, V Lazorenko, G Lashkarev, BG Svensson, ...
Superlattices and Microstructures 39 (1-4), 275-281, 2006
792006
High quality ZnO films deposited by radio-frequency magnetron sputtering using layer by layer growth method
AI Ievtushenko, VA Karpyna, VI Lazorenko, GV Lashkarev, ...
Thin Solid Films 518 (16), 4529-4532, 2010
762010
Luminescence anisotropy of ZnO microrods
V Khranovskyy, V Lazorenko, G Lashkarev, R Yakimova
Journal of Luminescence 132 (10), 2643-2647, 2012
562012
X-ray photoelectron spectroscopy study of nitrogen and aluminum-nitrogen doped ZnO films
A Ievtushenko, O Khyzhun, I Shtepliuk, V Tkach, V Lazorenko, ...
Acta Physica Polonica A 124 (5), 858-861, 2013
512013
Improvement of ZnO thin film properties by application of ZnO buffer layers
V Khranovskyy, R Minikayev, S Trushkin, G Lashkarev, V Lazorenko, ...
Journal of Crystal Growth 308 (1), 93-98, 2007
502007
Morphology, electrical and optical properties of undoped ZnO layers deposited on silicon substrates by PEMOCVD
V Khranovskyy, A Ulyashin, G Lashkarev, BG Svensson, R Yakimova
Thin Solid Films 516 (7), 1396-1400, 2008
432008
Conductivity increase of ZnO: Ga films by rapid thermal annealing
V Khranovskyy, U Grossner, V Lazorenko, G Lashkarev, BG Svensson, ...
Superlattices and Microstructures 42 (1-6), 379-386, 2007
422007
Optical and electrical properties of highly doped ZnO: Al films deposited by atomic layer deposition on Si substrates in visible and near infrared region
V Romanyuk, N Dmitruk, V Karpyna, G Lashkarev, V Popovych, ...
Acta Physica Polonica A 129 (1a), 2016
402016
Microstructure and luminescence dynamics of ZnCdO films with high Cd content deposited on different substrates by DC magnetron sputtering method
I Shtepliuk, V Khranovskyy, G Lashkarev, V Khomyak, A Ievtushenko, ...
Applied surface science 276, 550-557, 2013
402013
Properties of zinc oxide at low and moderate temperatures
GV Lashkarev, VA Karpyna, VI Lazorenko, AI Ievtushenko, II Shtepliuk, ...
Low Temperature Physics 37 (3), 226-234, 2011
402011
Multilayered ZnO films of improved quality deposited by magnetron sputtering
A Ievtushenko, V Karpyna, G Lashkarev, V Lazorenko, V Baturin, ...
acta physica polonica a 114 (5), 1131-1137, 2008
402008
On the temperature dependence of the energy gap in PbSe and PbTe
M Baleva, T Georgiev, G Lashkarev
Journal of Physics: Condensed Matter 2 (13), 2935, 1990
401990
Investigation of ZnO as a perspective material for photonics
V Khranovskyy, GR Yazdi, G Lashkarev, A Ulyashin, R Yakimova
physica status solidi (a) 205 (1), 144-149, 2008
382008
X-ray photoelectron spectroscopy study of highly-doped ZnO: Al, N films grown at O-rich conditions
A Ievtushenko, O Khyzhun, I Shtepliuk, O Bykov, R Jakieła, S Tkach, ...
Journal of Alloys and Compounds 722, 683-689, 2017
352017
Two‐Dimensional Character of Electron Gas in Layered InSe Crystals
AI Dmitriev, ZD Kovalyuk, VI Lazorenko, GV Lashkarev
physica status solidi (b) 162 (1), 213-225, 1990
331990
Electrical properties of n-Zn0. 94Cd0. 06O/p-SiC heterostructures
I Shtepliuk, V Khranovskyy, G Lashkarev, V Khomyak, V Lazorenko, ...
Solid-State Electronics 81, 72-77, 2013
322013
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