| Modern analysis of ion channeling data by Monte Carlo simulations L Nowicki, A Turos, R Ratajczak, A Stonert, F Garrido Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2005 | 131 | 2005 |
| Hydrogen release in UHMWPE upon He-ion bombardment AM Abdul-Kader, A Turos, J Jagielski, L Nowicki, R Ratajczak, A Stonert, ... Vacuum 78 (2-4), 281-284, 2005 | 65 | 2005 |
| Mechanism of damage buildup in ion bombarded ZnO A Turos, P Jóźwik, M Wójcik, J Gaca, R Ratajczak, A Stonert Acta Materialia 134, 249-256, 2017 | 63 | 2017 |
| Ni-based ohmic contacts to n-type 4H-SiC: The formation mechanism and thermal stability AV Kuchuk, P Borowicz, M Wzorek, M Borysiewicz, R Ratajczak, ... Advances in Condensed Matter Physics 2016, 2016 | 58 | 2016 |
| Comparison of static and dynamic 18F-FDG PET/CT for quantification of pulmonary inflammation in acute lung injury A Braune, F Hofheinz, T Bluth, T Kiss, J Wittenstein, M Scharffenberg, ... Journal of Nuclear Medicine 60 (11), 1629-1634, 2019 | 55* | 2019 |
| Fabrication and characterization of nickel silicide ohmic contacts to n-type 4H silicon carbide A Kuchuk, V Kladko, M Guziewicz, A Piotrowska, R Minikayev, A Stonert, ... Journal of Physics: Conference Series 100 (4), 042003, 2008 | 43 | 2008 |
| Long-term stability of Ni–silicide ohmic contact to n-type 4H–SiC AV Kuchuk, M Guziewicz, R Ratajczak, M Wzorek, VP Kladko, ... Microelectronic Engineering 85 (10), 2142-2145, 2008 | 39 | 2008 |
| The photoluminescence response to structural changes of Yb implanted ZnO crystals subjected to non-equilibrium processing R Ratajczak, S Prucnal, E Guziewicz, C Mieszczynski, D Snigurenko, ... Journal of Applied Physics 121 (7), 2017 | 26 | 2017 |
| Thermal degradation of Au/Ni2Si/n-SiC ohmic contacts under different conditions AV Kuchuk, M Guziewicz, R Ratajczak, M Wzorek, VP Kladko, ... Materials Science and Engineering: B 165 (1-2), 38-41, 2009 | 25 | 2009 |
| Modification of UHMWPE by ion, electron and γ-ray irradiation A Turos, AM Abdul-Kader, R Ratajczak, A Stonert Vacuum 83, S54-S56, 2009 | 24 | 2009 |
| Nanoscale Electrostructural Characterization of Compositionally Graded AlxGa1–xN Heterostructures on GaN/Sapphire (0001) Substrate AV Kuchuk, PM Lytvyn, C Li, HV Stanchu, YI Mazur, ME Ware, ... ACS applied materials & interfaces 7 (41), 23320-23327, 2015 | 22 | 2015 |
| RBS/Channeling and TEM study of damage buildup in ion bombarded GaN K Pągowska, R Ratajczak, A Stonert, A Turos, L Nowicki, N Sathish, ... Acta Physica Polonica A 120 (1), 153-155, 2011 | 21 | 2011 |
| Monte Carlo simulations of ion channeling in crystals containing dislocations and randomly displaced atoms P Jozwik, L Nowicki, R Ratajczak, A Stonert, C Mieszczynski, A Turos, ... Journal of Applied Physics 126 (19), 2019 | 20 | 2019 |
| Amorphous Ta–Si–N diffusion barriers on GaAs A Kuchuk, E Kaminska, A Piotrowska, K Golaszewska, E Dynowska, ... Thin Solid Films 459 (1-2), 292-296, 2004 | 20 | 2004 |
| Hydrogen-ion implantation in GaAs G Gawlik, R Ratajczak, A Turos, J Jagielski, S Bedell, WL Lanford Vacuum 63 (4), 697-700, 2001 | 20 | 2001 |
| Luminescence in the visible region from annealed thin ALD‐ZnO films implanted with different rare earth ions R Ratajczak, E Guziewicz, S Prucnal, G Łuka, R Böttger, R Heller, ... physica status solidi (a) 215 (16), 1700889, 2018 | 18 | 2018 |
| Atomic layer deposited ZnO films implanted with Yb: The influence of Yb location on optical and electrical properties E Guziewicz, R Ratajczak, M Stachowicz, D Snigurenko, TA Krajewski, ... Thin Solid Films 643, 7-15, 2017 | 18 | 2017 |
| RBS/C, XRR, and XRD Studies of Damage Buildup in Er‐Implanted ZnO P Jozwik, S Magalhaes, R Ratajczak, C Mieszczynski, M Sequeira, ... physica status solidi (b) 256 (5), 1800364, 2019 | 17 | 2019 |
| Modification of the near surface layer of carbon steels with intense argon and nitrogen plasma pulses B Sartowska, J Piekoszewski, L Waliś, W Szymczyk, J Stanisławski, ... Vacuum 78 (2-4), 181-186, 2005 | 17 | 2005 |
| Comparative study of radiation-induced damage in magnesium aluminate spinel by means of IL, CL and RBS/C techniques I Jozwik, J Jagielski, G Gawlik, P Jozwik, R Ratajczak, G Panczer, ... Physics and Chemistry of Minerals 43, 439-445, 2016 | 16 | 2016 |
Andrzej TurosProfessor, Institute of Electronic Materials TechnologyПідтверджена електронна адреса в itme.edu.pl
