Nadiia Safriuk
Nadiia Safriuk
V.E.Lashkaryov Institute of semiconductor physics NAS of Ukraine
Verified email at isp.kiev.ua
Title
Cited by
Cited by
Year
X-ray diffraction investigation of GaN layers on Si (111) and Al₂O₃ (0001) substrates
NV Safriuk, GV Stanchu, AV Kuchuk, VP Kladko, AE Belyaev, ...
Semiconductor physics quantum electronics & optoelectronics, 2013
212013
Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures
VP Kladko, AV Kuchuk, NV Safryuk, VF Machulin, AE Belyaev, ...
Applied physics letters 95 (3), 031907, 2009
212009
Influence of template type and buffer strain on structural properties of GaN multilayer quantum wells grown by PAMBE, an x-ray study
VP Kladko, AV Kuchuk, NV Safryuk, VF Machulin, PM Lytvyn, ...
Journal of Physics D: Applied Physics 44 (2), 025403, 2010
152010
High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si (111) substrate
H Stanchu, V Kladko, AV Kuchuk, N Safriuk, A Belyaev, A Wierzbicka, ...
Nanoscale research letters 10 (1), 51, 2015
112015
Structural and optical studies of strain relaxation in Ge1− xSnx layers grown on Ge/Si (001) by molecular beam epitaxy
AS Nikolenko, VV Strelchuk, NV Safriuk, SB Kryvyi, VP Kladko, ...
Thin Solid Films 613, 68-74, 2016
102016
Chemical–mechanical polishing of single crystals of PbTe and Pb1–xSnxTe solid solutions in H2O2–HBr–ethylene glycol etchants
GP Malanych, ZF Tomashyk, VM Tomashyk, IB Stratiychuk, NV Safryuk, ...
Nauk. Visn. Chernivtsi Nats. Univ. Khim, 72-78, 2013
102013
Modelling of X-ray diffraction curves for GaN nanowires on Si (1 1 1)
VP Kladko, ŔV Kuchuk, HV Stanchu, NV Safriuk, AE Belyaev, ...
Journal of crystal growth 401, 347-350, 2014
92014
The peculiarities of strain relaxation in GaN/AlN superlattices grown on vicinal GaN (0001) substrate: comparative XRD and AFM study
AV Kuchuk, S Kryvyi, PM Lytvyn, S Li, VP Kladko, ME Ware, YI Mazur, ...
Nanoscale research letters 11 (1), 1-8, 2016
82016
Temperature dependences of the contact resistivity in ohmic contacts to n +-InN
AV Sachenko, AE Belyaev, NS Boltovets, PN Brunkov, VN Jmerik, ...
Semiconductors 49 (4), 461-471, 2015
82015
High-resolution x-ray diffraction analysis of strain distribution in GaN nanowires on Si (111) substrate Nano
H Stanchu, V Kladko, AV Kuchuk, N Safriuk, A Belyaev, A Wierzbicka, ...
Res. Lett 10, 1-5, 2015
82015
Structuring effect of heteroepitaxial CdHgTe/CdZnTe systems under irradiation with silver ions
FF Sizov, RK Savkina, AB Smirnov, RS Udovytska, VP Kladko, ...
Physics of the solid state 56 (11), 2160-2165, 2014
82014
Influence of dislocation structure on deformation processes in AlGaN/GaN/(0001) Al2O3 heterostructures
VP Kladko, AV Kuchuk, NV Safryuk, AE Belyaev, VF Machulin
Ukrainian Journal of Physics 54 (10), 1014-1020, 2009
72009
Effect of strain-polarization fields on optical transitions in AlGaN/GaN multi-quantum well structures
V Kladko, A Kuchuk, Ŕ Naumov, N Safriuk, O Kolomys, S Kryvyi, ...
Physica E: Low-dimensional Systems and Nanostructures 76, 140-145, 2016
62016
X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure
VV Strelchuk, VP Kladko, EA Avramenko, OF Kolomys, NV Safryuk, ...
Semiconductors 44 (9), 1199-1210, 2010
62010
Determination of fundamental optical constant of Zn2SnO4 films
AO Salohub, AA Voznyi, OV Klymov, NV Safryuk, DI Kurbatov, ...
Semiconductor physics quantum electronics & optoelectronics, 79-84, 2017
52017
X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
VP Klad'ko, AV Kuchuk, NV Safryuk, VF Machulin, AE Belyaev, ...
Semiconductor physics quantum electronics & optoelectronics, 1-7, 2010
42010
Preparation and study of the porous Si surfaces obtained by electrochemical method
VG Lytovchenko, TI Gorbanyuk, VP Kladko, AV Sarikov, NV Safriuk, ...
Semiconductor physics quantum electronics & optoelectronics, 385-395, 2017
32017
Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
VP Kladko, NV Safriuk, HV Stanchu, AV Kuchuk, VP Melnyk, ...
Semiconductor physics quantum electronics & optoelectronics, 2014
32014
Current transport through ohmic contacts to indiume nitride with high defect density
PO Sai, NV Safriuk, VV Shynkarenko
2017 IEEE 7th International Conference Nanomaterials: Application …, 2017
22017
Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient
TM Sabov, OS Oberemok, OV Dubikovskyi, VP Melnik, VP Kladko, ...
Semiconductor physics quantum electronics & optoelectronics, 153-158, 2017
22017
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