Ruben Seisyan
Ruben Seisyan
ФТИ им. А.Ф.Иоффе, лаборатория квантоворазмерных гетероструктур
Подтвержден адрес электронной почты в домене ffm.ioffe.ru - Главная страница
Название
Процитировано
Процитировано
Год
Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap
VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
physica status solidi (b) 229 (3), r1-r3, 2002
13732002
Tamm plasmon polaritons: Slow and spatially compact light
ME Sasin, RP Seisyan, MA Kalitteevski, S Brand, RA Abram, ...
Applied physics letters 92 (25), 251112, 2008
3332008
Nanolithography in microelectronics: A review
RP Seisyan
Technical Physics 56 (8), 1061-1073, 2011
1212011
Phys. Status Solidi B https://doi. org/10.1002/1521-3951 (200202) 229: 3< R1:: AID-PSSB99991> 3.0. CO; 2-O 229
VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
R1, 2002
1212002
RETRACTED: Tamm plasmon-polaritons: First experimental observation
ME Sasin, RP Seisyan, MA Kaliteevski, S Brand, RA Abram, ...
Superlattices and Microstructures 47 (1), 44-49, 2010
932010
Спектроскопия диамагнитных экситонов
РП Сейсян
Наука. Гл. ред. физ.-мат. лит., 1984
701984
Spectroscopy of Diamagnetic Excitons
RP Seisyan
Science, Moscow, 1984
551984
Exciton-polariton light absorption in bulk GaAs and semiconductor superlattices
VA Kosobukin, RP Seisyan, SA Vaganov
Semiconductor science and technology 8 (7), 1235, 1993
531993
Нанолитография СБИС в экстремально дальнем вакуумном ультрафиолете (обзор
Р Сейсян
Журнал технической физики 75 (5), 1-13, 2005
412005
Нанолитография в микроэлектронике (Обзор)
РП Сейсян
Журнал технической физики 81 (8), 1-14, 2011
402011
Extreme ultraviolet nanolithography for ULSI: A review
RP Seisyan
Technical physics 50 (5), 535-545, 2005
382005
Absorption and emission of hexagonal InN. evidence of narrow fundamental band
V Yu Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
Gap Phys Status Solidi (b) 229, R1, 2002
382002
Exciton in a semiconductor quantum well subjected to a strong magnetic field
AV KRAVOKIN, AI Nesvizhskii, RP Seisyan
Semiconductors (Woodbury, NY) 27 (6), 530-536, 1993
361993
Detection of the Exciton Structure of the Absorption Edge of Indium Antimonide Crystals
LM Kanskaya, SI Kokhanovskii, RP Seisyan
Fizika i Tekhnika Poluprovodnikov 13 (12), 2424-2426, 1979
281979
Diamagnetic excitons and exciton magnetopolaritons in semiconductors
RP Seisyan
Semiconductor Science and Technology 27 (5), 053001, 2012
262012
Interband magneto-optics of semiconductors as diamagnetic exciton spectroscopy
RP Seisyan, BP Zakharchenya
Modern Problems in Condensed Matter Sciences 27 (1), 345-443, 1991
261991
Observation of the Exciton Structure of the Fundamental Absorption Edge of InAs Crystals
AV Varfolomeev, RP Seisyan, RN Yakimova
Soviet Physics-Semiconductors 9 (4), 530, 1975
241975
Exciton‐Polariton Behaviour of the Absorption Edge of Thin GaAs Crystals with the “Super‐Quantum” Thickness and MQW Enlarged Barriers
GN Aliev, NV Lukyanova, RP Seisyan, MR Vladimirova, H Gibbs, ...
physica status solidi (a) 164 (1), 193-197, 1997
221997
High-temperature effectiveness limit of exciton-polariton processes in cadmium and zinc telluride crystals
GN Aliev, OS Koshchug, RP Seisyan
Physics of the Solid State 36 (2), 203-211, 1994
221994
Two-dimensional photonic crystal fabrication using fullerene films
ME Gaevski, SO Kognovitskii, SG Konnikov, AV Nashchekin, SI Nesterov, ...
Nanotechnology 11 (4), 270, 2000
212000
В данный момент система не может выполнить эту операцию. Повторите попытку позднее.
Статьи 1–20