| An optically pumped 2.5 μm GeSn laser on Si operating at 110 K S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ... Applied Physics Letters 109 (17), 2016 | 239 | 2016 |
| Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ... Applied Physics Letters 105 (15), 2014 | 217 | 2014 |
| Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ... ACs Photonics 5 (3), 827-833, 2017 | 191 | 2017 |
| Systematic study of Ge1− xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ... Journal of Applied Physics 119 (10), 2016 | 135 | 2016 |
| Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth W Dou, M Benamara, A Mosleh, J Margetis, P Grant, Y Zhou, S Al-Kabi, ... Scientific reports 8 (1), 5640, 2018 | 128 | 2018 |
| Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ... Applied Physics Letters 104 (24), 2014 | 101 | 2014 |
| Competition of optical transitions between direct and indirect bandgaps in Ge1− xSnx W Du, SA Ghetmiri, BR Conley, A Mosleh, A Nazzal, RA Soref, G Sun, ... Applied Physics Letters 105 (5), 2014 | 97 | 2014 |
| Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection BR Conley, A Mosleh, SA Ghetmiri, W Du, RA Soref, G Sun, J Margetis, ... Optics express 22 (13), 15639-15652, 2014 | 96 | 2014 |
| Growth and characterization of epitaxial Ge1-XSnx alloys and heterostructures using a commercial CVD system J Margetis, SA Ghetmiri, W Du, BR Conley, A Mosleh, R Soref, G Sun, ... ECS Transactions 64 (6), 711, 2014 | 95 | 2014 |
| Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri, S Al-Kabi, A Mosleh, M Alher, ... Journal of Applied Physics 120, 023102, 2016 | 88 | 2016 |
| Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff BR Conley, J Margetis, W Du, H Tran, A Mosleh, SA Ghetmiri, J Tolle, ... Applied Physics Letters 105 (22), 2014 | 87 | 2014 |
| Material Characterization of Ge1−x Sn x Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications A Mosleh, SA Ghetmiri, BR Conley, M Hawkridge, M Benamara, A Nazzal, ... Journal of electronic materials 43, 938-946, 2014 | 83 | 2014 |
| Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas J Margetis, A Mosleh, S Al-Kabi, SA Ghetmiri, W Du, W Dou, M Benamara, ... Journal of Crystal Growth 463, 128-133, 2017 | 64 | 2017 |
| All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K J Margetis, Y Zhou, W Dou, PC Grant, B Alharthi, W Du, A Wadsworth, ... Applied Physics Letters 113 (22), 2018 | 56 | 2018 |
| Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics SA Ghetmiri, Y Zhou, J Margetis, S Al-Kabi, W Dou, A Mosleh, W Du, ... Optics Letters 42 (3), 387-390, 2017 | 52 | 2017 |
| Fundamentals of Ge1− xSnx and SiyGe1− x-ySnx RPCVD epitaxy J Margetis, A Mosleh, SA Ghetmiri, S Al-Kabi, W Dou, W Du, N Bhargava, ... Materials Science in Semiconductor Processing 70, 38-43, 2017 | 49 | 2017 |
| Shortwave-infrared photoluminescence from Ge1− xSnx thin films on silicon SA Ghetmiri, W Du, BR Conley, A Mosleh, A Nazzal, G Sun, RA Soref, ... Journal of Vacuum Science & Technology B 32 (6), 2014 | 44 | 2014 |
| Optical Characterization of Si-Based Ge1− x Sn x Alloys with Sn Compositions up to 12% S Al-Kabi, SA Ghetmiri, J Margetis, W Du, A Mosleh, M Alher, W Dou, ... Journal of Electronic Materials 45 (4), 2133–2141, 2016 | 40 | 2016 |
| Monolithically integrated silicon nitride platform Y Bian, C Meagher, K Nummy, S Chandran, WS Lee, A Aboketaf, D Ma, ... Optical Fiber Communication Conference, Th1A. 46, 2021 | 39 | 2021 |
| UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices PC Grant, W Dou, B Alharthi, JM Grant, H Tran, G Abernathy, A Mosleh, ... Optical Materials Express 9 (8), 3277-3291, 2019 | 34 | 2019 |
Shui-Qing (Fisher) YuUniversity of ArkansasVerified email at uark.edu
