Enhanced Inversion Mobility on 4H-SiC Using Phosphorus and Nitrogen Interface Passivation G Liu, AC Ahyi, Y Xu, T Isaacs-Smith, YK Sharma, JR Williams, ...
IEEE Electron Device Letters 34 (2), 181-183, 2013
131 2013 Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC J Crofton, SE Mohney, JR Williams, T Isaacs-Smith
Solid-State Electronics 46 (1), 109-113, 2002
109 2002 Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the 4H–SiC interface S Dhar, YW Song, LC Feldman, T Isaacs-Smith, CC Tin, JR Williams, ...
Applied physics letters 84 (9), 1498-1500, 2004
106 2004 Interface trap passivation for SiO2∕(0001) C-terminated 4H-SiC S Dhar, LC Feldman, S Wang, T Isaacs-Smith, JR Williams
Journal of Applied Physics 98 (1), 2005
102 2005 High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer YK Sharma, AC Ahyi, T Isaacs-Smith, A Modic, M Park, Y Xu, ...
IEEE Electron Device Letters 34 (2), 175-177, 2013
94 2013 Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate Y Zhou, C Ahyi, T Isaacs-Smith, M Bozack, CC Tin, J Williams, M Park, ...
Solid-State Electronics 52 (5), 756-764, 2008
83 2008 Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC XD Chen, S Dhar, T Isaacs-Smith, JR Williams, LC Feldman, PM Mooney
Journal of Applied Physics 103 (3), 2008
73 2008 Si/SiO2 and SiC/SiO2 interfaces for MOSFETs–challenges and advances ST Pantelides, S Wang, A Franceschetti, R Buczko, M Di Ventra, ...
Materials science forum 527, 935-948, 2006
73 2006 Nitrogen and hydrogen induced trap passivation at the SiO2/4H-SiC interface S Dhar, SR Wang, AC Ahyi, T Isaacs-Smith, ST Pantelides, JR Williams, ...
Materials science forum 527, 949-954, 2006
63 2006 Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors MJ Marinella, DK Schroder, T Isaacs-Smith, AC Ahyi, JR Williams, ...
Applied Physics Letters 90 (25), 2007
54 2007 10kV trench gate IGBTs on 4H-SiC Q Zhang, HR Chang, M Gomez, C Bui, E Hanna, JA Higgins, ...
Proceedings. ISPSD'05. The 17th International Symposium on Power …, 2005
49 2005 High-voltage UMOSFETs in 4H SiC IA Khan, JA Cooper, MA Capano, T Isaacs-Smith, JR Williams
Proceedings of the 14th International Symposium on Power Semiconductor …, 2002
46 2002 The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors T Chen, Z Luo, JD Cressler, TF Isaacs-Smith, JR Williams, G Chung, ...
Solid-State Electronics 46 (12), 2231-2235, 2002
45 2002 High temperature implant activation in 4H and 6H-SiC in a silane ambient to reduce step bunching SE Saddow, J Williams, T Isaacs-Smith, MA Capano, JA Cooper, ...
Materials Science Forum 338, 901-904, 2000
41 2000 Nitrogen passivation of deposited oxides on n 4H–SiC GY Chung, JR Williams, T Isaacs-Smith, F Ren, K McDonald, LC Feldman
Applied physics letters 81 (22), 4266-4268, 2002
39 2002 Improved ohmic contact to n-type 4H and 6H-SiC using nichrome ED Luckowski, JM Delucca, JR Williams, SE Mohney, MJ Bozack, ...
Journal of electronic materials 27, 330-334, 1998
37 1998 Improved Schottky Contacts on n -Type 4H-SiC Using ZrB2 Deposited at High Temperatures TN Oder, P Martin, AV Adedeji, T Isaacs-Smith, JR Williams
Journal of electronic materials 36, 805-811, 2007
33 2007 Carrier generation lifetimes in 4H-SiC MOS capacitors MJ Marinella, DK Schroder, G Chung, MJ Loboda, T Isaacs-Smith, ...
IEEE Transactions on Electron Devices 57 (8), 1910-1923, 2010
28 2010 Structure and magnetic properties of electrodeposited Ni films on n-GaAs (001) C Scheck, P Evans, R Schad, G Zangari, JR Williams, TF Isaacs-Smith
Journal of Physics: Condensed Matter 14 (47), 12329, 2002
28 2002 Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs annealed in O2, N2O, NO and CO2 W Wang, S Banerjee, TP Chow, RJ Gutmann, T Isaacs-Smith, JR Williams, ...
Materials Science Forum 457, 1309-1312, 2004
23 2004