Подписаться
Ulugbek Aminov
Ulugbek Aminov
доцент УрГУ
Подтвержден адрес электронной почты в домене urdu.uz
Название
Процитировано
Процитировано
Год
Vapour phase and liquid phase doping of ZnSe by group III elements
AN Georgobiani, UA Aminov, YV Korostelin, VI Kozlovsky, AS Nasibov, ...
Journal of crystal growth 184, 470-474, 1998
161998
p-Type II–VI compounds doped by rare-earth elements
AN Georgobiani, MB Kotljarevsky, VV Kidalov, IV Rogozin, UA Aminov
Journal of crystal growth 214, 516-519, 2000
152000
Luminescence and electrophysical characteristics of ZnSe implanted with acceptor impurities
AN Georgobiani, UA Aminov, VA Dravin, LS Lepnev, ID Mullabaev, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 1999
101999
Luminescence of N-doped ZnSe withp-n junction
AN Georgobiani, UA Aminov, VA Dravin, ZP Ilyukhina
Inorganic materials 36, 119-122, 2000
62000
The influence of the preliminary ion implantation in the ZnSe on the properties of the ZnO ZnSe structures, obtained by the radical beam gettering epitaxy method
AN Georgobiani, MB Kotljarevsky, UA Aminov, VV Kidalov, IV Rogozin
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 1997
61997
The lateral capacitance of nanometer mnosfet with a single charge trapped in oxide layeror at SiO2-Si3N4 interfaceat
E Atamuratov, UA Aminov, ZA Atamuratova, M Halillaev, A Abdikarimov, ...
Наносистемы: физика, химия, математика 6 (6), 837-842, 2015
52015
The Green function for simplest quantum graphs
KK Sabirov, UA Aminov, SK Sh, MK Karimov, A Kh
Наносистемы: физика, химия, математика 6 (6), 762-766, 2015
22015
Observation of minority-carrier traps in Schottky diodes with a high barrier and a compensated near-contact region using deep-level transient spectroscopy
EN Agafonov, UA Aminov, AN Georgobiani, LS Lepnev
Semiconductors 35, 48-53, 2001
22001
The edge ultraviolet luminescence of GaN: Zn films activated in a nitrogen plasma
AN Georgobiani, AN Gruzintsev, UA Aminov, MO Vorob’ev, II Khodos
Semiconductors 35, 144-148, 2001
12001
Observation of minority carrier traps by deep-level transient spectroscopy using high Schottky-barrier diodes with compensated contact region
EN Agafonov, UA Aminov, AN Georgobiani, LS Lepnev
Fizika i Tekhnika Poluprovodnikov 35 (1), 48-52, 2001
12001
Prospects for biomass as a of renewable energy source in rural areas in Uzbekistan
AE Atamuratov, S Ismailov, D Saidov, U Aminov
2012
Biogas-ecological pure energy source; Biogaz-ehkologik toza ehnergiya manbai
EA Koshchanov, UA Aminov, AE Abdikarimov
2010
Biogas-ecological pure energy source
EA Koshchanov, UA Aminov, AE Abdikarimov
2010
Tunable SiO2/Si-based nanostructures
AN Georgobiani, AE Atamuratov, UA Aminov, TA Atamuratov
Inorganic Materials 45, 900-904, 2009
2009
The Influence of Postimplantation Annealing in an Atomic-Oxygen Flow on the Luminescence of Zinc Selenide Single Crystals Implanted with Erbium
AN Georgobiani, MB Kotlyarevskii, UA Aminov, VV Kidalov, IV Rogozin
Bulletin of the Lebedev Physics Institute, 28-31, 1997
1997
LUMINESCENCE OF Tm3+ IN p-TYPE ZnS SINGLE CRYSTALS
AN Georgobiani, MB Kotlyarevskii, VV Kidalov, IV Rogozin, UA Aminov, ...
Bulletin of the Lebedev Physics Institute, 24-27, 1997
1997
Photoluminescence of Zinc Selenide Ion-implanted with Oxygen
UA Aminov, AA Galaev, AN Georgobiani, BT El'tazarov
Bulletin of the Lebedev Physics Institute, 18-22, 1996
1996
Electroluminescence and Electrical Characteristics of ZnSe-Based Structures Formed by Oxygen Implantation
UA Aminov, AA Galaev, AN Georgobiani, BT El'Tazarov
Bulletin of the Lebedev Physics Institute, 23-28, 1996
1996
В данный момент система не может выполнить эту операцию. Повторите попытку позднее.
Статьи 1–18