A.N.Nazarov
A.N.Nazarov
Institute of Semiconductor Physics NASU
Подтвержден адрес электронной почты в домене lab15.kiev.ua
Название
Процитировано
Процитировано
Год
Reduced electric field in junctionless transistors
JP Colinge, CW Lee, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ...
Applied Physics Letters 96 (7), 073510, 2010
2952010
Low subthreshold slope in junctionless multigate transistors
CW Lee, AN Nazarov, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ...
Applied Physics Letters 96 (10), 102106, 2010
2392010
Semiconductor-on-insulator materials for nanoelectronics applications
A Nazarov, JP Colinge, F Balestra, JP Raskin, F Gamiz, VS Lysenko
Springer, 2011
1102011
Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals
A Nazarov, JM Sun, W Skorupa, RA Yankov, IN Osiyuk, IP Tjagulskii, ...
Applied Physics Letters 86 (15), 151914, 2005
732005
Solid-State Electron
LW Wu, SJ Chang, YK Su, RW Chuang, YP Hsu, CH Kuo, WC Lai, ...
Solid State Electron, 1970
601970
Improvments in railway communication via GSM-R
K Kastell, S Bug, A Nazarov, R Jakoby
2006 IEEE 63rd Vehicular Technology Conference 6, 3026-3030, 2006
532006
Color control of white photoluminescence from carbon-incorporated silicon oxide
Y Ishikawa, AV Vasin, J Salonen, S Muto, VS Lysenko, AN Nazarov, ...
Journal of Applied Physics 104 (8), 083522, 2008
492008
Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors
T Rudenko, A Nazarov, I Ferain, S Das, R Yu, S Barraud, P Razavi
Applied Physics Letters 101 (21), 213502, 2012
452012
On the MOSFET threshold voltage extraction by transconductance and transconductance-to-current ratio change methods: Part I—Effect of gate-voltage-dependent mobility
T Rudenko, V Kilchytska, MKM Arshad, JP Raskin, A Nazarov, D Flandre
IEEE Transactions on Electron Devices 58 (12), 4172-4179, 2011
452011
Trapping of negative and positive charges in ion implanted silicon dioxide layers subjected to high-field electron injection
AN Nazarov, T Gebel, L Rebohle, W Skorupa, IN Osiyuk, VS Lysenko
Journal of applied physics 94 (7), 4440-4448, 2003
432003
On the MOSFET threshold voltage extraction by transconductance and transconductance-to-current ratio change methods: Part II—Effect of drain voltage
T Rudenko, V Kilchytska, MKM Arshad, JP Raskin, A Nazarov, D Flandre
IEEE Transactions on Electron Devices 58 (12), 4180-4188, 2011
422011
Blue and red electroluminescence of Europium-implanted metal-oxide-semiconductor structures as a probe for the dynamics of microstructure
L Rebohle, J Lehmann, S Prucnal, A Kanjilal, A Nazarov, I Tyagulskii, ...
Applied Physics Letters 93 (7), 071908, 2008
412008
On the mechanism of electroluminescence excitation in Er-doped SiO2 containing silicon nanoclusters
JM Sun, W Skorupa, T Dekorsy, M Helm, AN Nazarov
Optical Materials 27 (5), 1050-1054, 2005
412005
Random telegraph-signal noise in junctionless transistors
AN Nazarov, I Ferain, ND Akhavan, P Razavi, R Yu, JP Colinge
Applied Physics Letters 98 (9), 092111, 2011
402011
Carrier mobility in undoped triple-gate FinFET structures and limitations of its description in terms of top and sidewall channel mobilities
T Rudenko, V Kilchytska, N Collaert, M Jurczak, A Nazarov, D Flandre
IEEE transactions on electron devices 55 (12), 3532-3541, 2008
402008
Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides
T Rudenko, V Kilchytska, S Burignat, JP Raskin, F Andrieu, O Faynot, ...
Solid-State Electronics 54 (2), 164-170, 2010
392010
Low-temperature reduction of graphene oxide: electrical conductance and scanning kelvin probe force microscopy
OM Slobodian, PM Lytvyn, AS Nikolenko, VM Naseka, OY Khyzhun, ...
Nanoscale research letters 13 (1), 1-11, 2018
382018
Kinetics of structural and phase transformations in thin SiO x films in the course of a rapid thermal annealing
VA Dan’ko, IZ Indutnyi, VS Lysenko, IY Maidanchuk, VI Min’ko, ...
Semiconductors 39 (10), 1197-1203, 2005
342005
Electron mobility in heavily doped junctionless nanowire SOI MOSFETs
T Rudenko, A Nazarov, R Yu, S Barraud, K Cherkaoui, P Razavi, G Fagas
Microelectronic Engineering 109, 326-329, 2013
332013
The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices
AN Nazarov, SI Tiagulskyi, IP Tyagulskyy, VS Lysenko, L Rebohle, ...
Journal of Applied Physics 107 (12), 123112, 2010
322010
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