Reduced electric field in junctionless transistors JP Colinge, CW Lee, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ...
Applied Physics Letters 96 (7), 073510, 2010
292 2010 Low subthreshold slope in junctionless multigate transistors CW Lee, AN Nazarov, I Ferain, ND Akhavan, R Yan, P Razavi, R Yu, ...
Applied Physics Letters 96 (10), 102106, 2010
239 2010 Semiconductor-on-insulator materials for nanoelectronics applications A Nazarov, JP Colinge, F Balestra, JP Raskin, F Gamiz, VS Lysenko
Springer, 2011
109 2011 Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals A Nazarov, JM Sun, W Skorupa, RA Yankov, IN Osiyuk, IP Tjagulskii, ...
Applied Physics Letters 86 (15), 151914, 2005
74 2005 Solid-State Electron LW Wu, SJ Chang, YK Su, RW Chuang, YP Hsu, CH Kuo, WC Lai, ...
Solid State Electron, 1970
60 1970 Improvments in railway communication via GSM-R K Kastell, S Bug, A Nazarov, R Jakoby
2006 IEEE 63rd Vehicular Technology Conference 6, 3026-3030, 2006
54 2006 Color control of white photoluminescence from carbon-incorporated silicon oxide Y Ishikawa, AV Vasin, J Salonen, S Muto, VS Lysenko, AN Nazarov, ...
Journal of Applied Physics 104 (8), 083522, 2008
49 2008 On the mechanism of electroluminescence excitation in Er-doped SiO2 containing silicon nanoclusters JM Sun, W Skorupa, T Dekorsy, M Helm, AN Nazarov
Optical Materials 27 (5), 1050-1054, 2005
47 2005 Mobility enhancement effect in heavily doped junctionless nanowire silicon-on-insulator metal-oxide-semiconductor field-effect transistors T Rudenko, A Nazarov, I Ferain, S Das, R Yu, S Barraud, P Razavi
Applied Physics Letters 101 (21), 213502, 2012
45 2012 On the MOSFET threshold voltage extraction by transconductance and transconductance-to-current ratio change methods: Part I—Effect of gate-voltage-dependent mobility T Rudenko, V Kilchytska, MKM Arshad, JP Raskin, A Nazarov, D Flandre
IEEE Transactions on Electron Devices 58 (12), 4172-4179, 2011
45 2011 Trapping of negative and positive charges in ion implanted silicon dioxide layers subjected to high-field electron injection AN Nazarov, T Gebel, L Rebohle, W Skorupa, IN Osiyuk, VS Lysenko
Journal of applied physics 94 (7), 4440-4448, 2003
45 2003 On the MOSFET threshold voltage extraction by transconductance and transconductance-to-current ratio change methods: Part II—Effect of drain voltage T Rudenko, V Kilchytska, MKM Arshad, JP Raskin, A Nazarov, D Flandre
IEEE Transactions on Electron Devices 58 (12), 4180-4188, 2011
42 2011 Blue and red electroluminescence of Europium-implanted metal-oxide-semiconductor structures as a probe for the dynamics of microstructure L Rebohle, J Lehmann, S Prucnal, A Kanjilal, A Nazarov, I Tyagulskii, ...
Applied Physics Letters 93 (7), 071908, 2008
42 2008 Random telegraph-signal noise in junctionless transistors AN Nazarov, I Ferain, ND Akhavan, P Razavi, R Yu, JP Colinge
Applied Physics Letters 98 (9), 092111, 2011
40 2011 Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides T Rudenko, V Kilchytska, S Burignat, JP Raskin, F Andrieu, O Faynot, ...
Solid-State Electronics 54 (2), 164-170, 2010
39 2010 Carrier mobility in undoped triple-gate FinFET structures and limitations of its description in terms of top and sidewall channel mobilities T Rudenko, V Kilchytska, N Collaert, M Jurczak, A Nazarov, D Flandre
IEEE transactions on electron devices 55 (12), 3532-3541, 2008
39 2008 Low-temperature reduction of graphene oxide: electrical conductance and scanning kelvin probe force microscopy OM Slobodian, PM Lytvyn, AS Nikolenko, VM Naseka, OY Khyzhun, ...
Nanoscale research letters 13 (1), 139, 2018
38 2018 Electron mobility in heavily doped junctionless nanowire SOI MOSFETs T Rudenko, A Nazarov, R Yu, S Barraud, K Cherkaoui, P Razavi, G Fagas
Microelectronic Engineering 109, 326-329, 2013
34 2013 Kinetics of structural and phase transformations in thin SiOx films in the course of a rapid thermal annealing VA Dan’ko, IZ Indutnyi, VS Lysenko, IY Maidanchuk, VI Min’ko, ...
Semiconductors 39 (10), 1197-1203, 2005
34 2005 The effect of rare-earth clustering on charge trapping and electroluminescence in rare-earth implanted metal-oxide-semiconductor light-emitting devices AN Nazarov, SI Tiagulskyi, IP Tyagulskyy, VS Lysenko, L Rebohle, ...
Journal of Applied Physics 107 (12), 123112, 2010
33 2010