Device-quality β-Ga2O3 epitaxial films fabricated by ozone molecular beam epitaxy K Sasaki, A Kuramata, T Masui, EG Villora, K Shimamura, S Yamakoshi
Applied Physics Express 5 (3), 035502, 2012
679 2012 Large-size β-Ga2O3 single crystals and wafers EG Víllora, K Shimamura, Y Yoshikawa, K Aoki, N Ichinose
Journal of Crystal Growth 270 (3-4), 420-426, 2004
656 2004 Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping EG Víllora, K Shimamura, Y Yoshikawa, T Ujiie, K Aoki
Applied Physics Letters 92 (20), 2008
513 2008 Electrical control of the ferromagnetic phase transition in cobalt at room temperature D Chiba, S Fukami, K Shimamura, N Ishiwata, K Kobayashi, T Ono
Nature materials 10 (11), 853-856, 2011
505 2011 Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications K Shimamura, H Takeda, T Kohno, T Fukuda
Journal of crystal growth 163 (4), 388-392, 1996
249 1996 Nanostructured WO3 /BiVO4 Photoanodes for Efficient Photoelectrochemical Water Splitting Y Pihosh, I Turkevych, K Mawatari, T Asai, T Hisatomi, J Uemura, M Tosa, ...
Small 10 (18), 3692-3699, 2014
245 2014 Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy Y Oshima, EG Víllora, Y Matsushita, S Yamamoto, K Shimamura
Journal of Applied Physics 118 (8), 2015
226 2015 Excitation and photoluminescence of pure and Si-doped β-Ga2O3 single crystals K Shimamura, EG Víllora, T Ujiie, K Aoki
Applied Physics Letters 92 (20), 2008
219 2008 Halide vapor phase epitaxy of twin-free α-Ga2O3 on sapphire (0001) substrates Y Oshima, EG Víllora, K Shimamura
Applied Physics Express 8 (5), 055501, 2015
202 2015 Electric-field control of magnetic domain-wall velocity in ultrathin cobalt with perpendicular magnetization D Chiba, M Kawaguchi, S Fukami, N Ishiwata, K Shimamura, K Kobayashi, ...
Nature communications 3 (1), 888, 2012
194 2012 Donor structure and electric transport mechanism in M Yamaga, EG Víllora, K Shimamura, N Ichinose, M Honda
Physical Review B 68 (15), 155207, 2003
181 2003 Rf-plasma-assisted molecular-beam epitaxy of β-Ga2O3 EG Víllora, K Shimamura, K Kitamura, K Aoki
Applied physics letters 88 (3), 2006
178 2006 Electrical control of Curie temperature in cobalt using an ionic liquid film K Shimamura, D Chiba, S Ono, S Fukami, N Ishiwata, M Kawaguchi, ...
Applied Physics Letters 100 (12), 2012
174 2012 Band structures of perovskite-like fluorides for vacuum-ultraviolet-transparent lens materials T Nishimatsu, N Terakubo, H Mizuseki, Y Kawazoe, DA Pawlak, ...
Japanese journal of applied physics 41 (4A), L365, 2002
171 2002 Epitaxial growth of GaN on (1 0 0) β-Ga2O3 substrates by metalorganic vapor phase epitaxy K Shimamura, EG Víllora, K Domen, K Yui, K Aoki, N Ichinose
Japanese Journal of Applied Physics 44 (1L), L7, 2004
151 2004 Interpretation of XPS O (1s) in mixed oxides proved on mixed perovskite crystals DA Pawlak, M Ito, M Oku, K Shimamura, T Fukuda
The Journal of Physical Chemistry B 106 (2), 504-507, 2002
150 2002 Temperature dependence of Ce: YAG single-crystal phosphors for high-brightness white LEDs/LDs S Arjoca, EG Víllora, D Inomata, K Aoki, Y Sugahara, K Shimamura
Materials Research Express 2 (5), 055503, 2015
130 2015 Electrical conductivity and lattice expansion of β-Ga2O3 below room temperature EG Víllora, K Shimamura, T Ujiie, K Aoki
Applied Physics Letters 92 (20), 2008
120 2008 Growth and characterization of La3Ta0. 5Ga5. 5O14 single crystals H Kawanaka, H Takeda, K Shimamura, T Fukuda
Journal of crystal growth 183 (1-2), 274-277, 1998
119 1998 Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy Y Oshima, EG Vίllora, K Shimamura
Journal of Crystal Growth 410, 53-58, 2015
117 2015 