1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density R Suzuki, N Taoka, M Yokoyama, S Lee, SH Kim, T Hoshii, T Yasuda, ...
Applied Physics Letters 100 (13), 2012
191 2012 Individual atomic imaging of multiple dopant sites in As-doped Si using spectro-photoelectron holography K Tsutsui, T Matsushita, K Natori, T Muro, Y Morikawa, T Hoshii, ...
Nano Letters 17 (12), 7533-7538, 2017
69 2017 Impact of Fermi level pinning inside conduction band on electron mobility of Inx Ga1−x As MOSFETs and mobility enhancement by pinning modulation N Taoka, M Yokoyama, SH Kim, R Suzuki, R Iida, S Lee, T Hoshii, ...
2011 International Electron Devices Meeting, 27.2. 1-27.2. 4, 2011
61 2011 Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation T Hoshii, S Lee, R Suzuki, N Taoka, M Yokoyama, H Yamada, M Hata, ...
Journal of Applied Physics 112 (7), 2012
59 2012 Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties R Suzuki, N Taoka, M Yokoyama, SH Kim, T Hoshii, T Maeda, T Yasuda, ...
Journal of Applied Physics 112 (8), 2012
54 2012 Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering SL Tsai, T Hoshii, H Wakabayashi, K Tsutsui, TK Chung, EY Chang, ...
Applied Physics Letters 118 (8), 2021
45 2021 Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching Y Tamura, T Kaizu, T Kiba, M Igarashi, R Tsukamoto, A Higo, W Hu, ...
Nanotechnology 24 (28), 285301, 2013
42 2013 Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) Si micro channel areas T Hoshii, M Deura, M Sugiyama, R Nakane, S Sugahara, M Takenaka, ...
physica status solidi c 5 (9), 2733-2735, 2008
40 2008 Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors N Taoka, M Yokoyama, S Hyeon Kim, R Suzuki, S Lee, R Iida, T Hoshii, ...
Applied Physics Letters 103 (14), 2013
38 2013 Dislocation-free InGaAs on Si (111) using micro-channel selective-area metalorganic vapor phase epitaxy M Deura, T Hoshii, T Yamamoto, Y Ikuhara, M Takenaka, S Takagi, ...
Applied physics express 2 (1), 011101, 2008
38 2008 Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si M Deura, T Hoshii, M Takenaka, S Takagi, Y Nakano, M Sugiyama
Journal of Crystal Growth 310 (23), 4768-4771, 2008
38 2008 Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2 T Hoshii, M Yokoyama, H Yamada, M Hata, T Yasuda, M Takenaka, ...
Applied Physics Letters 97 (13), 2010
35 2010 Demonstration of 1200V scaled IGBTs driven by 5V gate voltage with superiorly low switching loss T Saraya, K Itou, T Takakura, M Fukui, S Suzuki, K Takeuchi, M Tsukuda, ...
2018 IEEE International Electron Devices Meeting (IEDM), 8.4. 1-8.4. 4, 2018
34 2018 A possible origin of the large leakage current in ferroelectric Al1− x Sc x N films J Kataoka, SL Tsai, T Hoshii, H Wakabayashi, K Tsutsui, K Kakushima
Japanese Journal of Applied Physics 60 (3), 030907, 2021
32 2021 Experimental verification of a 3D scaling principle for low Vce(sat) IGBT K Kakushima, T Hoshii, K Tsutsui, A Nakajima, S Nishizawa, ...
2016 IEEE International Electron Devices Meeting (IEDM), 10.6. 1-10.6. 4, 2016
31 2016 Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in Metal–Oxide–Semiconductor Field … N Taoka, M Yokoyama, SH Kim, R Suzuki, S Lee, R Iida, T Hoshii, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 456-462, 2013
28 2013 On the thickness scaling of ferroelectricity in Al0. 78Sc0. 22N films SL Tsai, T Hoshii, H Wakabayashi, K Tsutsui, TK Chung, EY Chang, ...
Japanese Journal of Applied Physics 60 (SB), SBBA05, 2021
27 2021 Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces T Haimoto, T Hoshii, S Nakagawa, M Takenaka, S Takagi
Applied Physics Letters 96 (1), 2010
25 2010 High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film Using UHV RF Magnetron Sputtering and Sulfurization M Hamada, K Matsuura, T Sakamoto, I Muneta, T Hoshii, K Kakushima, ...
IEEE Journal of the Electron Devices Society 7, 1258-1263, 2019
23 2019 Effect of tensile strain on gate current of strained-Si n-channel metal–oxide–semiconductor field-effect transistors T Hoshii, S Sugahara, S Takagi
Japanese journal of applied physics 46 (4S), 2122, 2007
22 2007