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Robert Lutz
Robert Lutz
UC Berkeley, GLOBALFOUNDRIES
Подтвержден адрес электронной почты в домене globalfoundries.com
Название
Процитировано
Процитировано
Год
Optical nonlinearity in low-temperature-grown GaAs: Microscopic limitations and optimization strategies
M Haiml, U Siegner, F Morier-Genoud, U Keller, M Luysberg, RC Lutz, ...
Applied Physics Letters 74 (21), 3134-3136, 1999
951999
Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and C
P Specht, RC Lutz, R Zhao, ER Weber, WK Liu, K Bacher, FJ Towner, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999
461999
Femtosecond nonlinear optics of low-temperature grown semiconductors
U Siegner, M Haiml, F Morier-Genoud, RC Lutz, P Specht, ER Weber, ...
Physica B: Condensed Matter 273, 733-736, 1999
151999
Native point defect analysis in non-stoichiometric GaAs: an annealing study
RC Lutz, P Specht, R Zhao, OH Lam, F Börner, J Gebauer, ...
Physica B: Condensed Matter 273, 722-724, 1999
141999
Papers from the 17th North American Conference on Molecular Beam Epitaxy-Doping-Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and C
P Specht, RC Lutz, R Zhao, ER Weber, WK Liu, K Bacher, FJ Towner, ...
Journal of Vacuum Science and Technology-Section B-Microelectronics …, 1999
31999
Properties of C-doped LT-GaAs grown by MBE using CBr4
WK Liu, K Bacher, FJ Towner, TR Stewart, C Reed, P Specht, RC Lutz, ...
Journal of crystal growth 201, 217-220, 1999
21999
Thermal Stabilization of Non-Stoichiometric GaAs through Beryllium Doping
RC Lutz, P Specht, R Zhao, S Jeong, J Bokor, ER Weber
MRS Online Proceedings Library (OPL) 510, 55, 1998
11998
NONLINEAR OPTICAL PROPERTIES OF LOW-TEMPERATURE GROWN SEMICONDUCTORS
U SIEGNER, M HAIML, F MORIER-GENOUD, RC LUTZ, P SPECHT, ...
2nd Symposium on Non-Stoichiometric III-V Compounds 10, 33, 1999
1999
The influence of beryllium dopants on the structural and electronic properties of low-temperature gallium arsenide
RC Lutz
University of California, Berkeley, 1999
1999
Electrical properties and thermal stability of Be-doped nonstoichiometric GaAs
RC Lutz, P Specht, R Zhao, ER Weber
Semiconducting and Insulating Materials 1998. Proceedings of the 10th …, 1998
1998
Time-resolved reflectivity measurement of thermally stabilized low temperature grown GaAs doped with beryllium
R Zhao, P Specht, RC Lutz, NW Pu, S Jeong, J Bokor, ER Weber
Semiconducting and Insulating Materials 1998. Proceedings of the 10th …, 1998
1998
Thermal Stabilization of Non-Stoichiometric GaAs through Beryllium Doping RC Lutz, P. Specht, R. Zhao, S. Jeong, J. Bokor” and ER Weber Department of Materials Science and …
RC Lutz
Defect and Impurity Engineered Semiconductors and Devices, 55, 1998
1998
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