| Identification of AsGa antisites in plastically deformed GaAs ER Weber, H Ennen, U Kaufmann, J Windscheif, J Schneider, T Wosinski Journal of Applied Physics 53 (9), 6140-6143, 1982 | 466 | 1982 |
| Evidence for the electron traps at dislocations in GaAs crystals T Wosiński Journal of applied physics 65 (4), 1566-1570, 1989 | 253 | 1989 |
| Recent advances in defect-selective etching of GaN JL Weyher, PD Brown, JL Rouviere, T Wosinski, ARA Zauner, I Grzegory Journal of Crystal Growth 210 (1-3), 151-156, 2000 | 157 | 2000 |
| Defect-selective etching of GaN in a modified molten bases system G Kamler, JL Weyher, I Grzegory, E Jezierska, T Wosiński Journal of crystal growth 246 (1-2), 21-24, 2002 | 119 | 2002 |
| Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope M Albrecht, HP Strunk, JL Weyher, I Grzegory, S Porowski, T Wosinski Journal of applied physics 92 (4), 2000-2005, 2002 | 115 | 2002 |
| Raman and cathodoluminescence study of dislocations in GaN H Lei, HS Leipner, J Schreiber, JL Weyher, T Wosiński, I Grzegory Journal of applied physics 92 (11), 6666-6670, 2002 | 59 | 2002 |
| Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy JL Weyher, M Albrecht, T Wosinski, G Nowak, HP Strunk, S Porowski Materials Science and Engineering: B 80 (1-3), 318-321, 2001 | 57 | 2001 |
| Misfit strain anisotropy in partially relaxed lattice-mismatched InGaAs/GaAs heterostructures O Yastrubchak, T Wosiński, JZ Domagała, E Łusakowska, T Figielski, ... Journal of Physics: Condensed Matter 16 (2), S1, 2003 | 52 | 2003 |
| Misfit dislocations and surface morphology of lattice-mismatched GaAs/InGaAs heterostructures O Yastrubchak, T Wosinski, T Figielski, E Lusakowska, B Pecz, AL Toth Physica E: Low-dimensional Systems and Nanostructures 17, 561-563, 2003 | 41 | 2003 |
| Evidence for two energy levels associated with EL2 trap in GaAs T Wosiński Applied Physics A 36, 213-216, 1985 | 41 | 1985 |
| Photoreflectance study of the fundamental optical properties of (Ga, Mn) As epitaxial films O Yastrubchak, J Żuk, H Krzyżanowska, JZ Domagala, T Andrearczyk, ... Physical Review B 83 (24), 245201, 2011 | 39 | 2011 |
| Capture kinetics at deep-level defects in lattice-mismatched GaAs-based heterostructures O Yastrubchak, T Wosiński, A Mąkosa, T Figielski, AL Toth Physica B: Condensed Matter 308, 757-760, 2001 | 37 | 2001 |
| Spin-dependent recombination at dislocations in silicon T Wosinski, T Figielski Phys. Status Solidi (a);(German Democratic Republic) 71 (1), 1975 | 36 | 1975 |
| Deep levels caused by misfit dislocations in GaAsSb/GaAs heterostructures T Wosiński, A Makosa, T Figielski, J Raczyńska Applied physics letters 67 (8), 1131-1133, 1995 | 35 | 1995 |
| Arsenic antisite defects as the main electron traps in plastically deformed GaAs T Wosiński, A Morawski, T Figielski Applied Physics A 30, 233-235, 1983 | 35 | 1983 |
| Band structure evolution and the origin of magnetism in (Ga, Mn) As: From paramagnetic through superparamagnetic to ferromagnetic phase L Gluba, O Yastrubchak, JZ Domagala, R Jakiela, T Andrearczyk, J Żuk, ... Physical Review B 97 (11), 115201, 2018 | 33 | 2018 |
| Transformation of native defects in bulk GaAs under ultrasonic vibration T Wosinski, A Makosa, Z Witczak Semiconductor science and technology 9 (11), 2047, 1994 | 29 | 1994 |
| Symmetry of the EL2 defect in GaAs T Figielski, T Wosinski Physical Review B 36 (2), 1269, 1987 | 29 | 1987 |
| Deep-level defects at lattice-mismatched interfaces in GaAs-based heterojunctions T Wosinski, O Yastrubchak, A Makosa, T Figielski Journal of Physics: Condensed Matter 12 (49), 10153, 2000 | 28 | 2000 |
| Effect of plastic deformation on the EPR spectrum of semi‐insulating GaAs: Cr T Wosiński physica status solidi (a) 60 (2), K149-K152, 1980 | 28 | 1980 |
