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Бойчук Василь Іванович
Бойчук Василь Іванович
Дрогобицький державний педагогічний університет імені Івана Франка
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The effect of the polarization charges on the optical properties of a spherical quantum dot with an off-central hydrogenic impurity
VI Boichuk, IV Bilynskyi, RY Leshko, LM Turyanska
Physica E: Low-dimensional Systems and Nanostructures 44 (2), 476-482, 2011
672011
Optical properties of a spherical quantum dot with two ions of hydrogenic impurity
VI Boichuk, IV Bilynskyi, RY Leshko, LM Turyanska
Physica E: Low-dimensional Systems and Nanostructures 54, 281-287, 2013
262013
Physics of nanosystems ground and excited states of D0 and D-Donors in a spherical quantum dot
VI Boichuk, IV Bilynskyi, RY Leshko
Ukrainian Journal of Physics 53 (10), 991-996, 2008
232008
Dielectric mismatch at finite barrier cubic quantum dots
VI Boichuk, IV Bilynsky, IO Shakleina, IP Kogoutiouk
Journal of Physics: Conference Series 289 (1), 012004, 2011
212011
Hole, impurity and exciton states in a spherical quantum dot
VI Boichuk, IV Bilynskyi, RY Leshko
Condensed Matter Physics, 2010
212010
The effect of polarization charges on energy of univalent and bivalent donors in a spherical quantum dot
VI Boichuk, IV Bilynskyi, RY Leshko
Condensed Matter Physics, 2008
192008
Effect of quantum dot shape of the GaAs/AlAs heterostructure on interlevel hole light absorption
VI Boichuk, IV Bilynskyi, OA Sokolnyk, IO Shakleina
arXiv preprint arXiv:1310.1232, 2013
172013
The electron energy spectrum in an ellipsoidal quantum dot with regard for finite band gap at the interface
VI Boichuk, VB Hol'skyi, RY Kubay, RI Lukin
Ukrayins' kij Fyizichnij Zhurnal (Kyiv) 53, 2008
122008
Electronic polaron of the AlN/GaN/AlN double nanoheterostructure of hexagonal symmetry crystals
VI Boichuk, VA Borusevych, IS Shevchuk
Journal of Optoelectronics and Advanced Materials 10 (6), 1357-1364, 2008
122008
Effect of Synthesis Conditions on Pseudocapacitance Properties of Nitrogen-Doped Porous Carbon Materials
V Boychuk, V Kotsyubynsky, A Kachmar, S Budzulyak, I Budzulyak, ...
Journal of Nano Research 59, 112-125, 2019
112019
Off-central acceptor impurity in a spherical quantum dot
VI Boichuk, RY Leshko, IV Bilynskyi, LM Turyanska
arXiv preprint arXiv:1210.2189, 2012
112012
Влияние промежуточного слоя с переменной от координаты диэлектрической проницаемостью на энергию основного состояния электрона в сферической сложной наногетеросистеме
ВИ Бойчук, РЮ Кубай
Физика твердого тела 43 (2), 226-232, 2001
112001
Effect of an intermediate layer with space-dependent permittivity on the ground state energy of an electron in a spherical complex nanoheterosystem
VI Boichuk, RY Kubai
Physics of the Solid State 43, 235-241, 2001
102001
Bound energy of the Wannier exciton in similar heterogeneous double structures
VI Boichuk, IV Bilynskii
physica status solidi (b) 174 (2), 463-470, 1992
101992
Study of an Acceptor Impurity Located at the Center of a Sperical Nanoheterostructure
VI Boichuk, IV Bilynskyi, RY Leshko, IO Shakleina
Відділення фізики і астрономії НАН України, 2010
92010
Вплив сил зображень на енергетичний спектр електрона у складному сферичному мікрокристалі 2
ВІ Бойчук, РЮ Кубай, ІВ Білинський
CdS HgS HO, 187-191, 1999
91999
Analysis of the effect of polarization traps and shallow impurities on the interlevel light absorption of quantum dots
VI Boichuk, RY Leshko, DS Karpyn
arXiv preprint arXiv:1712.05362, 2017
82017
Influence of the image potential on the energy spectrum of electron in complex spherical microcrystal CdS/β-HgS/H2O (in Ukrainian)
VI Boichuk, RY Kubay, IV Bilynskii
Journal of Physical Studies 3 (2), 187-191, 1999
81999
Effects of the intermediate layer with a variable dielectric constant of the coordinate on the ground state energy of electrons in the spherical complex nanoheterosystems
VI Boichuk, RY Kubay
FTT 43 (2), 226-232, 2001
72001
Результаты экспертной оценки стресс-тестов действующих энергоблоков АЭС Украины с учетом уроков аварии на АЭС Фукусима-1 в Японии
ГВ Громов, АМ Дыбач, ОВ Зеленый, ВВ Инюшев, АВ Носовский, ...
Ядерна та радіаційна безпека, 2012
62012
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